Abstract: A steering wheel provided with a vibration device. The vibration device includes a vibration motor with an eccentric weight attached to a rotational axis protruding out of a motor body and a mounting bracket which mounts the motor on a mounting section located at a region continuous with a ring section on a steering wheel core. The mounting section includes a vibration receiving section and a mounting base. The mounting bracket includes a pressing section which presses the motor body against the vibration receiving section and a mounting tongue which is secured to the mounting base. The mounting bracket is mounted on the mounting base with the motor body disposed on the pressing section in such a manner as to press a region of the motor body facing the vibration receiving section against the vibration receiving section and transmit a vibration of the motor body to the vibration receiving section.

Abstract: A high-refractive-index hardcoat layer of a sufficiently reduced haze value can be obtained from an aqueous composition contaning Si, Al and at least one of Ti and Zr, in which the ratio of the number of atoms of Ti and Zr with respect to the number of atoms of Si is 2.5 to 18, the ratio of the number of atoms of Al with respect to the number of atoms of Si is 0.08 to 0.22, and the aqueous composition has a haze value of 0.5% or less.

Abstract: A vacuum film formation method for forming at least one inorganic layer on a support, which comprise transporting a support of which the area of the surface to be coated with an inorganic layer formed thereon is a (unit: cm2) into a first vacuum tank having a capacity of at most 100a (unit: cm3) under atmospheric pressure, degassing the first vacuum tank into a vacuum, transporting the support from the first vacuum tank to a second vacuum tank while the vacuum condition is kept as such, and forming at least one inorganic layer on the support in the second vacuum tank.

Abstract: A composition for forming a layer to be plated comprises a compound represented by formula (1): (In formula (1), R10 represents a hydrogen atom, a metal cation or a quaternary ammonium cation, L10 represents a single bond or a divalent organic group, R11 to R13 each independently represent a hydrogen atom or an optionally substituted alkyl group, and n represents 1 or 2); and a polymer having a polymerizable group.

Abstract: An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region containing a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated to separate the single crystal semiconductor substrate in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation surface of a single crystal semiconductor layer which is separated from the single crystal semiconductor substrate and irradiation with a microwave is performed from the back side of the supporting substrate, the separation surface is irradiated with a laser beam. The single crystal semiconductor layer is melted by irradiation with the laser beam, so that the surface of the single crystal semiconductor layer is planarized and re-single-crystallization thereof is performed.

Abstract: A reactive sputtering method for application of a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a bias sputtering method; wherein a supporting substrate conveyor unit and a cathode that includes a target facing the supporting substrate conveyor unit are provided; the supporting substrate is conveyed between the supporting substrate conveyor unit and the target for formation of a film of a metal compound on the supporting substrate; magnets are provided adjacent to the supporting substrate conveyor unit on a side thereof opposite to that of the supporting substrate, such that a magnetic field is closed and a continuing tunnel part of parallel or nearly parallel arched magnetic force lines forms an oval or a polygon on the supporting substrate, the magnets each having a first magnetic pole of an S pole or an N pole and a second magnetic pole opposite to the first magnetic pole, the second magnetic pole surrounding the first magnetic po

Abstract: A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.

Abstract: A gas-barrier laminate film comprising at least one inorganic layer and at least one organic layer comprising a polymer of an acrylic monomer as a main ingredient on a substrate film, wherein the organic layer comprises a polymerization product of a bi- or more-functional polymerizing monomer having at least one sulfonyl group. The laminate film is highly resistant to moisture penetration and applicable to flexible organic EL devices.

Abstract: In a method for producing a barrier laminate having an organic layer and an inorganic layer on a support, the organic layer is formed by sputtering. The barrier laminate produced by the method has an excellent barrier property.

Abstract: A vacuum film formation method for forming at least one inorganic layer on a support, which comprise transporting a support of which the area of the surface to be coated with an inorganic layer formed thereon is a (unit: cm2) into a first vacuum tank having a capacity of at most 100 a (unit: cm3) under atmospheric pressure, degassing the first vacuum tank into a vacuum, transporting the support from the first vacuum tank to a second vacuum tank while the vacuum condition is kept as such, and forming at least one inorganic layer on the support in the second vacuum tank.

Abstract: An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region containing a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated to separate the single crystal semiconductor substrate in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation surface of a single crystal semiconductor layer which is separated from the single crystal semiconductor substrate and irradiation with a microwave is performed from the back side of the supporting substrate, the separation surface is irradiated with a laser beam. The single crystal semiconductor layer is melted by irradiation with the laser beam, so that the surface of the single crystal semiconductor layer is planarized and re-single-crystallization thereof is performed.

Abstract: A semiconductor substrate is manufactured with use of a semiconductor substrate manufacturing apparatus including: a cleaning portion in which a bonding surface of a base substrate, and a bonding surface of a single crystal semiconductor substrate are cleaned, wherein the single crystal semiconductor substrate includes an embrittlement region provided in a region at a predetermined depth from its surface; an electromagnetic wave irradiation portion in which the base substrate and the single crystal semiconductor substrate are attached to each other, the single crystal semiconductor substrate is irradiated with an electromagnetic wave, and the single crystal semiconductor substrate is separated using the embrittlement region as a separation plane, so that a single crystal semiconductor layer separated from the single crystal semiconductor substrate is fixed to the base substrate; and a heat treatment portion in which the single crystal semiconductor layer fixed to the base substrate is subjected to heat treatm

Abstract: A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.

Abstract: Disclosed is a A reactive sputtering apparatus for a bias sputtering method of applying a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a reactive sputtering method; which comprises a supporting substrate conveyor unit and a cathode that includes a target provided to face the supporting substrate conveyor unit, and wherein a supporting substrate is conveyed between the supporting substrate conveyor unit and the target for formation of a metal compound on the supporting substrate, magnets are provided adjacent to the supporting substrate conveyor unit on the side thereof opposite to the supporting substrate in such that the magnetic field is closed and the continuing tunnel part of parallel or nearly parallel arched magnetic force lines forms an oval or a polygon, on the supporting substrate, the magnets each having a first magnetic pole of an S pole or an N pole and a second magnetic pole opposite to the first magnetic pole, the s

Abstract: A compartment temperature adjustment switch 12 is provided for successively switching a target temperature of a compartment air conditioner through pushing operation of a push button 12a. The switch 12 includes the push button 12a, a substrate 22 fixed to the push button 12a, and light emitting elements 23 mounted on the substrate 22. The segments are selectively illuminated when the light emitting elements 23 are turned on, and a target temperature is numerically displayed on the push button 12a by a combination of illuminated ones of the segments. An information display portion is integrally formed with the push button 12a.

Abstract: A gas analyzer apparatus including a support tube having a distal portion arranged in a flue and a gas sensor supported on the support tube. An air supply tube supplies cooling air into the support tube. A basal portion of the gas sensor is cooled by the cooling air.

Abstract: A gas-barrier laminate film comprising at least one inorganic layer and at least one organic layer comprising a polymer of an acrylic monomer as a main ingredient on a substrate film, wherein the organic layer comprises a polymerization product of a bi- or more-functional polymerizing monomer having at least one sulfonyl group. The laminate film is highly resistant to moisture penetration and applicable to flexible organic EL devices.

Abstract: A gas analyzer apparatus including a support tube having a distal portion arranged in a flue and a gas sensor supported on the support tube. An air supply tube supplies cooling air into the support tube. A basal portion of the gas sensor is cooled by the cooling air.

Abstract: A holder for holding a display device is divided into a first holder (5) and a second holder (6), and a light source housing chamber (10) for housing a light source (1) is also divided so that a work for mounting the light source (1) to the light source housing chamber (10) becomes easy. A first reflector (55) and a second reflector (65) integrally formed with the holder and having a reflecting surface corresponding to a light emitting part of the light source (1) are provided in the light source housing chamber (10), thus a certain space is secured around the light source, the light is efficiently incident to a light guide plate, and a separately formed reflector becomes unnecessary.