Abstract: Provided is a drug that allows highly-efficient skipping of exon. The present invention provides an antisense oligomer wherein two or more unit oligomers targeting sequences that are neither consecutive nor overlap with each other in the same exon are connected.

Abstract: Dielectric breakdown resistance of a power module including a SiC-IGBT and a SiC diode is improved. The power module includes a SiC-IGBT 110 and a SiC diode 111, and a film thickness of a resin layer 323 covering an upper portion of an electric field relaxation region 320 of the SiC-IGBT 110 is larger than a chip thickness of the SiC-IGBT 110, that is, for example, 200 ?m or more.

Abstract: The present invention provides an oligomer which efficiently enables to cause skipping of the 53rd exon in the human dystrophin gene. Also provided is a pharmaceutical composition which causes skipping of the 53rd exon in the human dystrophin gene with a high efficiency.

Abstract: On receiving simplified settlement data generated form settlement data and ID data for downloading electronic-receipt data from an electronic-receipt server, both from a settlement-processing apparatus, a portable terminal records the simplified settlement data in association with the ID data. The display unit of the portable terminal displays the simplified settlement data thus recorded. The portable terminal downloads electronic-receipt data from the electronic-receipt server by using the ID data recorded in association with the simplified settlement data, when the input unit is operated, thereby commanding that the electronic receipt related to the simplified settlement data displayed by the display unit should be downloaded. The electronic-receipt data is recorded in the electronic-receipt recording unit. The display unit displays the electronic receipt on the basis the electronic-receipt data recorded in the electronic-receipt recording unit.

Abstract: The present invention provides an oligomer which efficiently enables to cause skipping of the 53rd exon in the human dystrophin gene. Also provided is a pharmaceutical composition which causes skipping of the 53rd exon in the human dystrophin gene with a high efficiency.

Abstract: The sputter device according to one embodiment of the present invention has: a treatment vessel in which a substrate is housed; a slit plate which is disposed above the substrate inside the treatment vessel so as to be located parallel to a surface of the substrate and which has formed therein an opening that penetrates in the plate-thickness direction; and a heat-receiving plate which is formed of a material having a higher heat resistance than the slit plate and which is placed on top of the slit plate beneath a target material provided at a slant with respect the slit plate.

Abstract: A plurality of trench gate electrodes are formed from an upper surface to reach an intermediate depth of an n-type SiC epitaxial substrate including an n-type drain region on a lower surface and an n-type source region on an upper surface in contact with the source region to be arranged in a direction along the upper surface. Here, at least three side surfaces among four side surfaces of each of the trench gate electrodes having a rectangular planar shape are in contact with a p-type body layer below the source region. In addition, a JFET region in the SiC epitaxial substrate and a source electrode connected to the source region immediately above the JFET region extend along a direction in which the plurality of trench gate electrodes are arranged.

Abstract: The present invention provides a pharmaceutical agent which causes skipping of the 55th, 45th, 50th or 44th exon in the human dystrophin gene with a high efficiency. The present invention provides an oligomer which efficiently enables to cause skipping of the 55th, 45th, 50th or 44th exon in the human dystrophin gene.

Abstract: A laminate mainly made of polyimide with low thermal expansion, high mechanical strength, and high heat resistance, and a method for manufacturing the same are provided. A surface of a polyimide film is activated and then treated by a silane coupling agent. Subsequently, the obtained silane coupling agent-treated polyimide films are superimposed, and pressure and heat are applied to the superimposed polyimide films so as to manufacture a polyimide film laminate. The obtained polyimide film laminate has a cross-sectional structure of superimposing polyimide film layers and silane coupling agent condensate layer(s) alternately to each other. Adhesive strength between the polyimide films of the polyimide film laminate of the present invention does not change largely from initial adhesive strength even after heat treatment at 400° C. for 15 minutes. Further, the polyimide film laminate exhibits a high bending elastic modulus and impact resistance.

Abstract: The present invention provides an oligomer which efficiently enables to cause skipping of the 53rd exon in the human dystrophin gene. Also provided is a pharmaceutical composition which causes skipping of the 53rd exon in the human dystrophin gene with a high efficiency.

Abstract: The present invention provides an oligomer which efficiently enables to cause skipping of the 53rd exon in the human dystrophin gene. Also provided is a pharmaceutical composition which causes skipping of the 53rd exon in the human dystrophin gene with a high efficiency.

Abstract: The present invention provides an oligomer which efficiently enables to cause skipping of the 53rd exon in the human dystrophin gene. Also provided is a pharmaceutical composition which causes skipping of the 53rd exon in the human dystrophin gene with a high efficiency.

Abstract: To provide a fuel cell stack device that is applicable to miniaturization of the device and does not require a pipe for discharging off-gas up to a combustion section. A fuel cell stack device including: a first manifold 2a for supplying fuel gas supplied from a reformer 12 to a plurality of fuel cells provided in a first cell stack from above, the first manifold being connected to upper ends of the plurality of fuel cells provided in the first cell stack 10a; and a second manifold 2b for recovering fuel gas discharged from the first cell stack, and supplying the recovered fuel gas to the plurality of fuel cells provided in the second cell stack from below, the second manifold being connected to lower ends of the plurality of fuel cells provided in the second cell stack 10b.

Abstract: Provided is a semiconductor device whose performance is improved. A p type body region is formed in an n type semiconductor layer containing silicon carbide, and a gate electrode is formed on the body region with a gate insulating film interposed therebetween. An n type source region is formed in the body region on a side surface side of the gate electrode, and the body region and a source region are electrically connected to a source electrode. A p type field relaxation layer FRL is formed in the semiconductor layer on the side surface side of the gate electrode, and the source electrode is electrically connected to the field relaxation layer FRL. The field relaxation layer FRL constitutes a part of the JFET 2Q which is a rectifying element, and a depth of the field relaxation layer FRL is shallower than a depth of the body region.

Abstract: The invention provides a laminate including a polyimide film and an inorganic substrate, which has a number density of blisters including carbide particles therein of 50/m2 or less, an average height of blisters of 2 ?m or less, a product of the number density of the blisters (blisters/m2) and the average height of the blisters (?m) of 20 or less. The inventive laminate can be obtained by laminating the polyimide film and the inorganic substrate after sufficiently purifying and cleaning to remove foreign bodies made of inorganic substance therefrom, followed by heat treating the laminate at a temperature of 350-600° C. and then rapidly cooling it to carbonize and reduce the organic foreign bodies, and also to rapidly cool the gas contained in the blisters, which leads to reduced height of blisters.

Abstract: An image capturing apparatus comprises an image sensor, a display, a processor; and a memory holding a program which makes the processor function as a focus detection unit for detecting a focus position of the imaging lens, an imaging control unit configured to carry out the focus bracketing, and a display control unit configured to cause the display device to display a guide indicating a first area and a second area before the focus bracketing is carried out, the first area being an area in which an object suitable for focus detection of the imaging lens by the focus detection unit is arranged, and the second area being an area in which an object suitable for a user to determine an image that is in focus is arranged.

Abstract: A method may be executed by one or more active capacitive styluses and a sensor controller connected to sensor electrodes. The method includes: a discovery step, executed by the sensor controller, of repeatedly sending out a discovery packet for detecting any of the active capacitive styluses; a discovery response step, executed by a first active capacitive stylus among the one or more active capacitive styluses, by which the discovery packet is detected, of returning a response packet to the discovery packet; a configuration step, executed by the sensor controller, of transmitting a configuration packet including time slot designation information that designates a first time slot to the first active capacitive stylus; and a data transmission step, executed by the first active capacitive stylus, of transmitting operation state data indicative of an operation state of the first active capacitive stylus using the designated first time slot.

Abstract: An image processing apparatus includes a printing unit configured to print an image on a sheet, a network interface, and a controller configured to control modes of the image processing apparatus, the modes including a first mode in which power is supplied to the printing unit and a second mode in which power is not supplied to the printing unit. The controller is further configured to acquire device information via the network interface from that are connected to a network, count the number of the devices connected to the network, then calculate a statistical value based on the counted number of the devices and a previous number of devices connected to the network at a previous time. The controller controls the modes of the image processing apparatus based on the counted number of the devices and the statistical value.

Abstract: There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.

Abstract: A plurality of trench gate electrodes are formed from an upper surface to reach an intermediate depth of an n-type SiC epitaxial substrate including an n-type drain region on a lower surface and an n-type source region on an upper surface in contact with the source region to be arranged in a direction along the upper surface. Here, at least three side surfaces among four side surfaces of each of the trench gate electrodes having a rectangular planar shape are in contact with a p-type body layer below the source region. In addition, a JFET region in the SiC epitaxial substrate and a source electrode connected to the source region immediately above the JFET region extend along a direction in which the plurality of trench gate electrodes are arranged.