Patents by Inventor Naoki Yoshii
Naoki Yoshii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11944321Abstract: A clip device includes a clip, including a plurality of arms having sliding grooves; and an intermediate member inserted into the sliding grooves for connecting the plurality of arms; a pressing tube accommodating a proximal end portion of the clip; a connection member connecting with an operation wire at a proximal end side and including an engaging portion engaging with the intermediate member; and a locking mechanism for lock the plurality of arms when the clip is pulled toward the proximal end side by a predetermined distance by the connection member, wherein the clip includes a contact portion formed on a side surface of the arm to be in contact with the engaging portion from a direction orthogonal to an axial direction of the intermediate portion for preventing a deformation of the engaging portion when the intermediate portion slides along the sliding groove before the plurality of arms are locked.Type: GrantFiled: January 26, 2022Date of Patent: April 2, 2024Assignee: OLYMPUS MEDICAL SYSTEMS CORP.Inventors: Toshihiro Yoshii, Naoki Takizawa
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Patent number: 11225708Abstract: There is provision of a plasma spraying device including a supplying section configured to convey feedstock powder with a plasma generating gas, and to inject the feedstock powder and the plasma generating gas from an opening of a tip; a plasma generating section configured to generate a plasma by decomposing the injected plasma generating gas using electric power of 500 W to 10 kW; and a chamber causing the supplying section and the plasma generating section to be an enclosed region, which is configured to deposit the feedstock powder on a workpiece by melting the feedstock powder by the plasma generated in the enclosed region. The feedstock powder is any one of lithium (Li), aluminum (Al), copper (Cu), silver (Ag), and gold (Au). A particle diameter of the feedstock powder is between 1 ?m and 50 ?m.Type: GrantFiled: December 7, 2017Date of Patent: January 18, 2022Assignee: Tokyo Electron LimitedInventors: Yoshiyuki Kobayashi, Naoki Yoshii, Katsuji Kadosawa, Kimitomo Kaji
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Publication number: 20200071810Abstract: There is provision of a plasma spraying device including a supplying section configured to convey feedstock powder with a plasma generating gas, and to inject the feedstock powder and the plasma generating gas from an opening of a tip; a plasma generating section configured to generate a plasma by decomposing the injected plasma generating gas using electric power of 500 W to 10 kW; and a chamber causing the supplying section and the plasma generating section to be an enclosed region, which is configured to deposit the feedstock powder on a workpiece by melting the feedstock powder by the plasma generated in the enclosed region. The feedstock powder is any one of lithium (Li), aluminum (Al), copper (Cu), silver (Ag), and gold (Au). A particle diameter of the feedstock powder is between 1 ?m and 50 ?m.Type: ApplicationFiled: December 7, 2017Publication date: March 5, 2020Inventors: Yoshiyuki KOBAYASHI, Naoki YOSHII, Katsuji KADOSAWA, Kimitomo KAJI
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Publication number: 20180251891Abstract: A vaporizer includes: a gas-liquid mixer for mixing a solution containing a precursor and a carrier gas; a nozzle for injecting the mixed solution; a vaporization chamber in which the injected solution is vaporized; a first temperature-adjustment-mechanism for adjusting a chamber temperature of the vaporization chamber; a second temperature-adjustment-mechanism for adjusting a mixing temperature of the gas-liquid mixer; a third temperature-adjustment-mechanism for adjusting a nozzle temperature of the nozzle; and a control device for controlling the first temperature-adjustment-mechanism to adjust the chamber temperature to a first temperature higher than a vaporization temperature of the precursor, for controlling the second temperature-adjustment-mechanism to adjust the mixing temperature to a second temperature lower than the first temperature, and for controlling the third temperature-adjustment-mechanism to adjust the nozzle temperature to a third temperature ranging from the first temperature to the secType: ApplicationFiled: May 4, 2018Publication date: September 6, 2018Inventors: Takashi FUJIBAYASHI, Naoki YOSHII
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Patent number: 8822263Abstract: It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.Type: GrantFiled: June 29, 2009Date of Patent: September 2, 2014Assignees: National University Corporation Tokyo University of Agriculture and Technology, Rohm Co., Ltd., Tokyo Electron LimitedInventors: Akinori Koukitu, Yoshinao Kumagai, Tetsuo Fujii, Naoki Yoshii
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Patent number: 8721846Abstract: A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.Type: GrantFiled: November 29, 2005Date of Patent: May 13, 2014Assignee: Tokyo Electron LimitedInventors: Naoki Yoshii, Yasuhiko Kojima
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Patent number: 8211500Abstract: A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H2 is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.Type: GrantFiled: February 25, 2005Date of Patent: July 3, 2012Assignee: Tokyo Electron LimitedInventors: Yasuhiko Kojima, Naoki Yoshii
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Patent number: 7887670Abstract: The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base.Type: GrantFiled: November 21, 2007Date of Patent: February 15, 2011Assignee: Tokyo Electron LimitedInventors: Kenjiro Koizumi, Naoki Yoshii
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Patent number: 7846839Abstract: An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.Type: GrantFiled: October 3, 2005Date of Patent: December 7, 2010Assignee: Tokyo Electron LimitedInventors: Yasuhiko Kojima, Naoki Yoshii
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Patent number: 7717061Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).Type: GrantFiled: September 23, 2005Date of Patent: May 18, 2010Assignee: Tokyo Electron LimitedInventors: Tadahiro Ishizaka, Naoki Yoshii, Kohei Kawamura, Yukio Fukuda, Takashi Shigeoka, Yasuhiko Kojima, Yasuhiro Oshima, Junichi Arami, Atsushi Gomi
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Patent number: 7699945Abstract: There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.Type: GrantFiled: September 21, 2007Date of Patent: April 20, 2010Assignee: Tokyo Electron LimitedInventors: Naoki Yoshii, Koumei Matsuzawa, Yasuhiko Kojima
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Publication number: 20100006836Abstract: It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.Type: ApplicationFiled: June 29, 2009Publication date: January 14, 2010Applicants: Natinal University Corporation Tokyo University of Agriculture and Technology, ROHM CO., LTD., TOKYO ELECTRON LIMITEDInventors: Akinori Koukitu, Yoshinao Kumagai, Tetsuo Fujii, Naoki Yoshii
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Publication number: 20090145744Abstract: Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed.Type: ApplicationFiled: November 29, 2005Publication date: June 11, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki Yoshii, Yasuhiko Kojima
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Publication number: 20090032950Abstract: An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.Type: ApplicationFiled: October 3, 2005Publication date: February 5, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuhiko Kojima, Naoki Yoshii
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Publication number: 20090029047Abstract: Disclosed is a film-forming method characterized by comprising a step for forming a primary Cu film on a substrate by using a divalent Cu source material, and another step for forming a secondary Cu film on the primary Cu film by using a monovalent Cu source material.Type: ApplicationFiled: March 22, 2006Publication date: January 29, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki Yoshii, Koumei Matsuzawa, Yasuhiko Kojima
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Publication number: 20080178810Abstract: The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base.Type: ApplicationFiled: November 21, 2007Publication date: July 31, 2008Inventors: Kenjiro Koizumi, Naoki Yoshii
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Publication number: 20080070017Abstract: There is provided a layered thin film structure forming method capable of forming a layered thin film structure bonded to an underlying layer by high adhesion, of suppressing the peeling of the layered thin film structure off the underlying layer, of achieving satisfactory step coverage even under high miniaturization, and of satisfactorily diffusing an alloying element. A layered thin film structure forming method of forming a layered thin film structure by depositing a plurality of thin films on a surface of a workpiece in a processing vessel capable of being evacuated includes the steps of: forming an alloying-element film 104 of a first metal by using a source gas containing the first metal as an alloying element, and a reducing gas; and forming a base-metal film 106 of a second metal in a thickness greater than that of the alloying-element film by using a source gas containing the second metal, and a reducing gas.Type: ApplicationFiled: January 30, 2006Publication date: March 20, 2008Inventors: Naoki Yoshii, Yasuhiko Kojima, Hiroshi Sato
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Publication number: 20080020934Abstract: There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.Type: ApplicationFiled: September 21, 2007Publication date: January 24, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki YOSHII, Koumei Matsuzawa, Yasuhiko Kojima
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Publication number: 20070197398Abstract: A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H2 is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.Type: ApplicationFiled: February 25, 2005Publication date: August 23, 2007Inventors: Yasuhiko Kojima, Naoki Yoshii
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Publication number: 20070004186Abstract: A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase by plasma and supplied onto the substrate.Type: ApplicationFiled: September 5, 2006Publication date: January 4, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki Yoshii, Yasuhiko Kojima