Abstract: A substrate treatment apparatus includes: a substrate treatment unit that treats a substrate with a treatment liquid containing ozone dissolved therein; a recovery tank in which the treatment liquid discharged from the substrate treatment unit is recovered; a recovery pipe that connects the substrate treatment unit to the recovery tank; a heating member that heats the treatment liquid to a first temperature in at least one of the recovery pipe and the recovery tank; a supply piping system that supplies the treatment liquid from the recovery tank to the substrate treatment unit; and an ozone gas pipe that supplies ozone gas to the supply piping system to mix the ozone gas in the treatment liquid passing through the supply piping system.

Abstract: A substrate processing method is provided for removing a resist having a hardened layer from a front surface of a substrate. The substrate processing method includes a hardened-layer removing step and a wet processing step. The hardened-layer removing step includes a heating step of heating the substrate to 150° C. or more and an ozone-gas supplying step of supplying an ozone gas to the front surface of the substrate being heated by the heating step, and the hardened-layer removing step removes the hardened layer by generating an oxygen radical near the front surface of the substrate. The wet processing step removes the resist from the front surface of the substrate by supplying a processing liquid including a sulfuric acid to the front surface of the substrate after the hardened-layer removing step.

Abstract: A substrate processing method is provided for removing a resist having a hardened layer from a front surface of a substrate. The substrate processing method includes a hardened-layer removing step and a wet processing step. The hardened-layer removing step includes a heating step of heating the substrate to 150° C. or more and an ozone-gas supplying step of supplying an ozone gas to the front surface of the substrate being heated by the heating step, and the hardened-layer removing step removes the hardened layer by generating an oxygen radical near the front surface of the substrate. The wet processing step removes the resist from the front surface of the substrate by supplying a processing liquid including a sulfuric acid to the front surface of the substrate after the hardened-layer removing step.