Patents by Inventor Naoko Asai

Naoko Asai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7694526
    Abstract: A shielding member includes a shielding plate for covering a part of a heat exchanger, heat transfer tube engagement sections for engaging with heat transfer tubes of the heat exchanger, fin engagement portions for engaging with fins of the heat exchanger, a bypass preventing rib for preventing air from being directed to the part of the heat exchanger, and a mismounting preventing portion for preventing the shielding member from being mounted on a heat exchanger that does not require blocking of air flow. The heat exchanger in which the part covered with the shielding member has no heat exchanging function is manufactured with the same components as those of a heat exchanger on which the shielding member is not mounted and the whole of which has a heat exchanging function.
    Type: Grant
    Filed: October 31, 2005
    Date of Patent: April 13, 2010
    Assignee: Daikin Industries, Ltd.
    Inventors: Kiyoshi Inoue, Katsuhiro Wakihara, Naoko Asai, Toshiaki Yamada, Ikuhiro Yamada, Shiro Kashiwa
  • Publication number: 20070245757
    Abstract: A shielding member includes a shielding plate for covering a part of a heat exchanger, heat transfer tube engagement sections for engaging with heat transfer tubes of the heat exchanger, fin engagement portions for engaging with fins of the heat exchanger, a bypass preventing rib for preventing air from being directed to the part of the heat exchanger, and a mismounting preventing portion for preventing the shielding member from being mounted on a heat exchanger that does not require blocking of air flow. The heat exchanger in which the part covered with the shielding member has no heat exchanging function is manufactured with the same components as those of a heat exchanger on which the shielding member is not mounted and the whole of which has a heat exchanging function.
    Type: Application
    Filed: October 31, 2005
    Publication date: October 25, 2007
    Applicant: Daikin Industries, Ltd.
    Inventors: Kiyoshi Inoue, Katsuhiko Wakihara, Naoko Asai, Toshiaki Yamada, Ikuhiro Yamada, Shiro Kashiwa
  • Patent number: 6555295
    Abstract: A very high reflection prevention effect can be produced for a variety of kinds of substrates, including those having transparent films and those having high reflectivity like metallic films, without posing any problem, such as aspect ratios, during the process of forming anti-reflective films This method can form fine and precise resist patterns and therefore improve the yield and reliability of devices to be manufactured. When applied to logic LSIs, this invention enables them to be manufactured at high dimensional precision and increases their operation speeds. While we have shown and described several embodiments in accordance with the present invention, it is understood that the same is not limited thereto, but is susceptible to numerous changes and modifications as is known in the art; and we therefore do not wish to be limited to the details shown and described herein, but intend to cover all such modifications as are encompassed by the scope of the appended claims.
    Type: Grant
    Filed: August 28, 2002
    Date of Patent: April 29, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 6548312
    Abstract: In order to inhibit or prevent a pattern abnormality such as the deformation or misalignment of a pattern of a semiconductor integrated circuit device, a light intensity is calculated based on the pattern data DBP of a mask and the aberration data DBL of a lens of a pattern exposure device (step 101) and then the results of the light intensity calculation is compared with the results of the light intensity calculated on condition that the lens of the pattern exposure device has no aberration (step 102), and then a pattern data exceeding an allowable level, of the pattern data of the mask, is corrected according to the amount of correction calculated on the basis of the results of the comparison such that the pattern data does not exceed the allowable level (step 104). The mask is manufactured by using the mask making data DBM after the correction and then is mounted on the pattern exposure device to transfer a predetermined pattern to a semiconductor wafer.
    Type: Grant
    Filed: August 18, 2000
    Date of Patent: April 15, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Katsuya Hayano, Norio Hasegawa, Akira Imai, Naoko Asai, Eiji Tsujimoto, Takahiro Watanabe
  • Patent number: 6461776
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.
    Type: Grant
    Filed: January 25, 2002
    Date of Patent: October 8, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Publication number: 20020136970
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.
    Type: Application
    Filed: January 25, 2002
    Publication date: September 26, 2002
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 6355400
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.
    Type: Grant
    Filed: May 7, 2001
    Date of Patent: March 12, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 6255036
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: July 3, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 6225011
    Abstract: A pattern can be written in accordance with a distortion which changes depending upon exposure conditions of the optical exposure system and exposed pattern features, and a pattern can be written with a high alignment accuracy by the optical exposure system and an electron beam lithography system or two optical exposure systems. A pattern which is exposed by optical exposure system divided into very small areas shown by broken lines, and pattern feature amounts (fx), (fy) at each area are calculated. A correction amount is obtained by using the pattern feature amount and the position within an exposure field as parameters based on exposure distortion examined by a standard pattern predeterminedly.
    Type: Grant
    Filed: April 20, 1999
    Date of Patent: May 1, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Yasuko Gotoh, Norio Hasegawa, Naoko Asai, Katsuya Hayano, Takashi Matsuzaka, Katsuhiro Kawasaki
  • Patent number: 6162588
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.
    Type: Grant
    Filed: November 15, 1999
    Date of Patent: December 19, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 5985517
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.
    Type: Grant
    Filed: April 1, 1999
    Date of Patent: November 16, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 5935765
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.
    Type: Grant
    Filed: September 24, 1998
    Date of Patent: August 10, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 5846693
    Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method.
    Type: Grant
    Filed: February 10, 1998
    Date of Patent: December 8, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
  • Patent number: 5733712
    Abstract: A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film.
    Type: Grant
    Filed: February 16, 1996
    Date of Patent: March 31, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai