Patents by Inventor Naoko Asai
Naoko Asai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7694526Abstract: A shielding member includes a shielding plate for covering a part of a heat exchanger, heat transfer tube engagement sections for engaging with heat transfer tubes of the heat exchanger, fin engagement portions for engaging with fins of the heat exchanger, a bypass preventing rib for preventing air from being directed to the part of the heat exchanger, and a mismounting preventing portion for preventing the shielding member from being mounted on a heat exchanger that does not require blocking of air flow. The heat exchanger in which the part covered with the shielding member has no heat exchanging function is manufactured with the same components as those of a heat exchanger on which the shielding member is not mounted and the whole of which has a heat exchanging function.Type: GrantFiled: October 31, 2005Date of Patent: April 13, 2010Assignee: Daikin Industries, Ltd.Inventors: Kiyoshi Inoue, Katsuhiro Wakihara, Naoko Asai, Toshiaki Yamada, Ikuhiro Yamada, Shiro Kashiwa
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Publication number: 20070245757Abstract: A shielding member includes a shielding plate for covering a part of a heat exchanger, heat transfer tube engagement sections for engaging with heat transfer tubes of the heat exchanger, fin engagement portions for engaging with fins of the heat exchanger, a bypass preventing rib for preventing air from being directed to the part of the heat exchanger, and a mismounting preventing portion for preventing the shielding member from being mounted on a heat exchanger that does not require blocking of air flow. The heat exchanger in which the part covered with the shielding member has no heat exchanging function is manufactured with the same components as those of a heat exchanger on which the shielding member is not mounted and the whole of which has a heat exchanging function.Type: ApplicationFiled: October 31, 2005Publication date: October 25, 2007Applicant: Daikin Industries, Ltd.Inventors: Kiyoshi Inoue, Katsuhiko Wakihara, Naoko Asai, Toshiaki Yamada, Ikuhiro Yamada, Shiro Kashiwa
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Patent number: 6555295Abstract: A very high reflection prevention effect can be produced for a variety of kinds of substrates, including those having transparent films and those having high reflectivity like metallic films, without posing any problem, such as aspect ratios, during the process of forming anti-reflective films This method can form fine and precise resist patterns and therefore improve the yield and reliability of devices to be manufactured. When applied to logic LSIs, this invention enables them to be manufactured at high dimensional precision and increases their operation speeds. While we have shown and described several embodiments in accordance with the present invention, it is understood that the same is not limited thereto, but is susceptible to numerous changes and modifications as is known in the art; and we therefore do not wish to be limited to the details shown and described herein, but intend to cover all such modifications as are encompassed by the scope of the appended claims.Type: GrantFiled: August 28, 2002Date of Patent: April 29, 2003Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Patent number: 6548312Abstract: In order to inhibit or prevent a pattern abnormality such as the deformation or misalignment of a pattern of a semiconductor integrated circuit device, a light intensity is calculated based on the pattern data DBP of a mask and the aberration data DBL of a lens of a pattern exposure device (step 101) and then the results of the light intensity calculation is compared with the results of the light intensity calculated on condition that the lens of the pattern exposure device has no aberration (step 102), and then a pattern data exceeding an allowable level, of the pattern data of the mask, is corrected according to the amount of correction calculated on the basis of the results of the comparison such that the pattern data does not exceed the allowable level (step 104). The mask is manufactured by using the mask making data DBM after the correction and then is mounted on the pattern exposure device to transfer a predetermined pattern to a semiconductor wafer.Type: GrantFiled: August 18, 2000Date of Patent: April 15, 2003Assignee: Hitachi, Ltd.Inventors: Katsuya Hayano, Norio Hasegawa, Akira Imai, Naoko Asai, Eiji Tsujimoto, Takahiro Watanabe
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Patent number: 6461776Abstract: Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.Type: GrantFiled: January 25, 2002Date of Patent: October 8, 2002Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Publication number: 20020136970Abstract: Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.Type: ApplicationFiled: January 25, 2002Publication date: September 26, 2002Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Patent number: 6355400Abstract: Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.Type: GrantFiled: May 7, 2001Date of Patent: March 12, 2002Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Patent number: 6255036Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.Type: GrantFiled: September 18, 2000Date of Patent: July 3, 2001Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Patent number: 6225011Abstract: A pattern can be written in accordance with a distortion which changes depending upon exposure conditions of the optical exposure system and exposed pattern features, and a pattern can be written with a high alignment accuracy by the optical exposure system and an electron beam lithography system or two optical exposure systems. A pattern which is exposed by optical exposure system divided into very small areas shown by broken lines, and pattern feature amounts (fx), (fy) at each area are calculated. A correction amount is obtained by using the pattern feature amount and the position within an exposure field as parameters based on exposure distortion examined by a standard pattern predeterminedly.Type: GrantFiled: April 20, 1999Date of Patent: May 1, 2001Assignee: Hitachi, Ltd.Inventors: Yasuko Gotoh, Norio Hasegawa, Naoko Asai, Katsuya Hayano, Takashi Matsuzaka, Katsuhiro Kawasaki
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Resist pattern forming method using anti-reflective layer and method of etching using resist pattern
Patent number: 6162588Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.Type: GrantFiled: November 15, 1999Date of Patent: December 19, 2000Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai -
Patent number: 5985517Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.Type: GrantFiled: April 1, 1999Date of Patent: November 16, 1999Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Patent number: 5935765Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film.Type: GrantFiled: September 24, 1998Date of Patent: August 10, 1999Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Patent number: 5846693Abstract: Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method.Type: GrantFiled: February 10, 1998Date of Patent: December 8, 1998Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai
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Patent number: 5733712Abstract: A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film.Type: GrantFiled: February 16, 1996Date of Patent: March 31, 1998Assignee: Hitachi, Ltd.Inventors: Toshihiko Tanaka, Shoichi Uchino, Naoko Asai