Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

Abstract: The present invention relates to a cordierite sintered body including all elements belonging to an element group M1 consisting of calcium, magnesium, aluminum, and silicon, in which a content of the calcium is 0.06 mass % or more and 3.40 mass % or less in terms of oxide, a content of the magnesium is 12.9 mass % or more in terms of oxide, a content of an element M2, which is a metal element other than the elements belonging to the element group M1, is 1.5 mass % or less in terms of oxide, a porosity is 3.0 vol % or less, a four-point bending strength is 170 MPa or more, and a Weibull coefficient is 9.5 or more.

Abstract: The present invention relates to a light-transmitting ceramic sintered body which contains air voids having pore diameters of 1 ?m or more but less than 5 ?m at a density within the range of from 10 voids/mm3 to 4,000 voids/mm3 (inclusive), while having a closed porosity of from 0.01% by volume to 1.05% by volume (inclusive). With respect to this light-transmitting ceramic sintered body, a test piece having a thickness of 1.90 mm has an average transmittance of 70% or more in the visible spectrum wavelength range of 500-900 nm, and the test piece having a thickness of 1.90 mm has a sharpness of 60% or more at a comb width of 0.5 mm.

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

Abstract: A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).

Abstract: An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H? originally bonded with the metal cations have been replaced with fluorine ions F? and at least one of the fluorine ions F? is bonded with one to three of the metal cations.

Abstract: The present invention relates to a light-transmitting ceramic sintered body which contains air voids having pore diameters of 1 ?m or more but less than 5 ?m at a density within the range of from 10 voids/mm3 to 4,000 voids/mm3 (inclusive), while having a closed porosity of from 0.01% by volume to 1.05% by volume (inclusive). With respect to this light-transmitting ceramic sintered body, a test piece having a thickness of 1.90 mm has an average transmittance of 70% or more in the visible spectrum wavelength range of 500-900 nm, and the test piece having a thickness of 1.90 mm has a sharpness of 60% or more at a comb width of 0.5 mm.

Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 k? to 100 M?.

Abstract: Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×1018 cm?3 and less than or equal to 2.3×1021 cm?3, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material includig calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7.

Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm?3 to 2.3×1021 cm?3.

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

Abstract: A light-emitting device having a light-extraction structure includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and an inorganic-material-based layer disposed between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer. The inorganic-material-based layer has thickness of 100 nm or more and has conductivity of 10?6 ??1 cm?1 or more and 100 ??1 cm?1 or less.

Abstract: A production method of an electroconductive mayenite compound having an electron density greater than or equal to 5×1020 cm?3 includes preparing an object of processing containing a mayenite compound or a precursor of a mayenite compound, placing aluminum foil on at least part of a surface of the object of processing, and retaining the object of processing at temperatures falling within the range of 1080° C. to 1450° C. in a low oxygen partial pressure atmosphere.

Abstract: A method of manufacturing an electrically conductive mayenite compound, includes preparing a body to be processed including a mayenite compound; and placing the body to be processed in the presence of carbon monoxide gas and aluminum vapor supplied from an aluminum source without being in contact with the aluminum source and retaining the body to be processed at a temperature range of 1080° C. to 1450° C. under a reducing atmosphere.

Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 k? to 100 M?.

Abstract: A light-emitting device having a light-extraction structure includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and an inorganic-material-based layer disposed between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer. The inorganic-material-based layer has thickness of 100 nm or more and has conductivity of 10?6 ??1cm?1 or more and 100 ??1cm?1 or less.

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.