Abstract: A reflector LED lamp comprises: a reflector 18 having a spheroidal reflecting surface with an opening provided therein; a plurality of LEDs 44, 46, 48, 50, and 52 arranged in the reflector 18, on a plane perpendicular to an optical axis X of the reflector 18; and a lighting circuit operable to light the plurality of LEDs, wherein the plurality of LEDs are divided into at least a first group (LED 44) and a second group (LED 46, 48, 50, and 52), the first group arranged at a first distance from the optical axis X, the second group arranged at a second distance from the optical axis X, the second distance being longer than the first distance, and while the plurality of LEDs are lit by the lighting circuit, luminous flux per LED is larger in the first group than in the second group.

Abstract: Lamp realizing high brightness without increase in size, including: case 3 that is in conical shape, wherein LEDs 37 are installed on inner surface of bottom 5 of case 3; lens 13 that is smaller than case 3 in size and positioned in case 3 such that light emission face 63 of lens 13 is on opening side of case 3; cover 15 that is installed to cover opening of case 3 so that light emitted from face 63 is extracted to outside of lamp; base member 17 that is hollow inside and attached to outer surface of bottom 5 of case 3 to project toward outside; and lighting circuit 23 that receives electricity via base member 17, and causes LEDs 37 to emit light. Electronic parts 49, 51 and 99 constituting lighting circuit 23 are arranged in distribution in spaces of case 3 and base member 17.

Abstract: An aim is to provide a light source device that can be assembled more easily than conventional light source devices. A light source device 100 comprises a light emitting module 150, a mount 140, a lighting unit 110, and a case 120, wherein the lighting unit 110 has a pair of pin terminals 112a and 112b, each of the mount 140 and a substrate 151 of the light emitting module 150 has a pair of through-holes 154a and 154b, and a pair of feed terminals 153a and 153b are disposed at positions of the substrate 151 corresponding to the through-holes 154a and 154b, the pair of pin terminals 112a and 112b being electrically connected to the pair of feed terminals 153a and 153b by penetrating through the through-holes 154a and 154b of the mount 140 and the substrate 151.

Abstract: Provided is a light-bulb type LED lamp 10 including a plurality of LEDs 67-78, a base 12, a lighting circuit unit that converts commercial power provided through the base 12 into power for lighting the LEDs 67-78, and a heat radiation member 16 that includes a bowl-shaped portion 42. Two stages 46 and 48, extending inwards from an inner circumferential surface 44 of the bowl-shaped portion 42, are provided in a direction of a central axis X of the bowl-shaped portion 42. The LEDs 67-78 are mounted on the stages 46 and 48 in a circumferential direction around the central axis X.

Abstract: A light source apparatus that can be assembled and disassembled easily. A light source apparatus 100 includes: a body 120 housing a light-emitting module 110; and a front cover 130 attached to an opening portion 121 of the body 120 and including a light emission window 131 for allowing light emitted from the light-emitting module 110 to go outside. The opening portion 121 is provided on a front side of the body 120. The front cover 130 includes a plurality of engaging claws 134a through 134f and is attached to the body 120 when the engaging claws 134a through 134f engage with a claw receiving portion 124 provided in an outer surface of the body 120.

Abstract: In a spot light source 1 including a case 11, a heat radiator 12 and a light-emitter 18, the heat radiator 12 is formed to have a bowl shape including a bottom portion 12a and a side wall portion 12b extending from the peripheral edge of the bottom portion 12a, and the side wall portion 12b is made of light-transmissive ceramic. Light emitted by an LED element 18b of the light-emitter 18 is guided to the side wall portion 12b by a lens 18d so as to generate a leak light traveling sideways from the spot light source 1, which produces highly decorative effect.

Abstract: A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

Abstract: A reflector LED lamp comprises: a reflector 18 having a spheroidal reflecting surface with an opening provided therein; a plurality of LEDs 44, 46, 48, 50, and 52 arranged in the reflector 18, on a plane perpendicular to an optical axis X of the reflector 18; and a lighting circuit operable to light the plurality of LEDs, wherein the plurality of LEDs are divided into at least a first group (LED 44) and a second group (LED 46, 48, 50, and 52), the first group arranged at a first distance from the optical axis X, the second group arranged at a second distance from the optical axis X, the second distance being longer than the first distance, and while the plurality of LEDs are lit by the lighting circuit, luminous flux per LED is larger in the first group than in the second group.

Abstract: Provided is a lighting apparatus that is suitable as a substitute for a conventional halogen lamp when positively utilizing leaked light. The lighting apparatus comprises: a heat dissipator 12 that is in one of a bottomed cylindrical shape and a bowl shape, and that has a bottom portion, a circumferential wall portion, and an opening; and a light-emitting device 18b that is provided inside the heat dissipator 12 at the bottom portion and is operable to emit light, wherein the heat dissipator 12 has one or more windows 19 for leaking the emitted light outside the heat dissipator 12.

Abstract: In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower electrode and the upper electrode. One electrode (the lower electrode) of the capacitor element is connected to one storage node of a flip-flop circuit, and the other electrode (the upper electrode) is connected to the other storage node. As a result, the storage node capacitance of the memory cell of the SRAM is increased to improve the soft error resistance.

Abstract: In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower electrode and the upper electrode. One electrode (the lower electrode) of the capacitor element is connected to one storage node of a flip-flop circuit, and the other electrode (the upper electrode) is connected to the other storage node. As a result, the storage node capacitance of the memory cell of the SRAM is increased to improve the soft error resistance.

Abstract: A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.