Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.

Abstract: A composition includes a copolymer of vinylimidazole with a water-soluble film-forming monomer other than vinylimidazole, and a fluorine-containing surfactant. A resist laminate is obtained by forming an anti-reflection coating on the surface of a photoresist film, which anti-refection coating is composed of a coating solution obtained by dissolving the composition in water. The composition for lithographic anti-reflection coating has balanced compatibility with conventional photoresist compositions. By using the composition, a semiconductor device can be efficiently produced without the clogging of waste fluids in a waste fluid pipe, even when the application of the photoresist composition and the formation of the anti-reflection coating are sequentially performed using one coater. This composition is also advantageous for saving space in a clean room.