Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: Provided is a semiconductor device including: a first substrate having a first circuit manufactured thereon; a second substrate having a second circuit manufactured thereon and being arranged to be spaced apart from the first substrate; connection part that is arranged between the first substrate and the second substrate and electrically connect the first circuit and the second circuit; and a shielding layer that is sandwiched, together with the connection part, between the first substrate and the second substrate, is arranged so as to surround the connection part, and is connected to an electric potential with a constant value within at least one of the first substrate and the second substrate.

Abstract: Provided is a semiconductor device including: a first substrate having a first circuit manufactured thereon; a second substrate having a second circuit manufactured thereon and being arranged to be spaced apart from the first substrate; connection part that is arranged between the first substrate and the second substrate and electrically connect the first circuit and the second circuit; and a shielding layer that is sandwiched, together with the connection part, between the first substrate and the second substrate, is arranged so as to surround the connection part, and is connected to an electric potential with a constant value within at least one of the first substrate and the second substrate.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: A solid-state imaging device includes a first substrate, a second substrate, connection units that electrically connect the first substrate aid the second substrate, pixels in the first substrate, the pixel including a photoelectric conversion element that converts incident lights to signal charges and accumulates the signal charges, and the pixel outputting pixel signals in accordance with the signal charges, signal lines that supply the second substrate with the pixel signals via the connection units, signal integration units in the second substrate that integrate the pixel signals supplied via the signal lines, and that produce an integrated signal, and signal output units that output the integrated signal.

Abstract: A solid-state image pickup device includes a plurality of pixels arranged in a two-dimensional matrix, and outputs signals corresponding to the light quantity incident on each pixel. Each pixel includes: a first pixel that is equipped with a first photoelectric conversion means that converts incident light into an electrical signal to store it; and a second pixel that is equipped with a second photoelectric conversion means that converts incident light into an electrical signal to store it, and a light beam selecting means that selects a light beam that is incident on the second photoelectric conversion means. The solid-state image pickup device includes: a first scanning circuit; and a second scanning circuit. The solid-state image pickup device outputs the electrical signals stored in the first photoelectric conversion means as image signals, and outputs the electrical signals stored in the second photoelectric conversion means as focus signals.

Abstract: A solid-state image pickup device includes a plurality of pixels arranged in a two-dimensional matrix, and outputs signals corresponding to the light quantity incident on each pixel. Each pixel includes: a first pixel that is equipped with a first photoelectric conversion means that converts incident light into an electrical signal to store it; and a second pixel that is equipped with a second photoelectric conversion means that converts incident light into an electrical signal to store it, and a light beam selecting means that selects a light beam that is incident on the second photoelectric conversion means. The solid-state image pickup device includes: a first scanning circuit; and a second scanning circuit. The solid-state image pickup device outputs the electrical signals stored in the first photoelectric conversion means as image signals, and outputs the electrical signals stored in the second photoelectric conversion means as focus signals.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: A solid-state imaging device includes a first substrate, a second substrate, connection units that electrically connect the first substrate aid the second substrate, pixels in the first substrate, the pixel including a photoelectric conversion element that converts incident lights to signal charges and accumulates the signal charges, and the pixel outputting pixel signals in accordance with the signal charges, signal lines that supply the second substrate with the pixel signals via the connection units, signal integration units in the second substrate that integrate the pixel signals supplied via the signal lines, and that produce an integrated signal, and signal output units that output the integrated signal.

Abstract: A solid-state imaging apparatus including a pixel section having pixels arranged into rows and columns each pixel containing at least a photoelectric conversion device for converting an incident light into signal electric charges, a transfer device for transferring the signal electric charges generated at the photoelectric conversion device, and an amplification device for amplifying the transferred signal electric charges; constant current supplies each connected to respective one of the vertical signal lines; an amplification section for amplifying an image signal; a clip section for clipping the vertical signal line so that it does not fall below a predetermined voltage in a read period for outputting the signal electric charges generated at the photoelectric conversion device onto the vertical signal line; and a control section for changing a clip level of the clip section in accordance with setting of an amplification factor at the amplification section.

Abstract: A solid-state imaging apparatus including a plurality of pixels, each pixel containing a photoelectric conversion section; an accumulation section; a transfer section; an amplification section; and a reset section for resetting the accumulation section; the pixel section having output signal lines provided column by column onto which the pixel signal is outputted, connected to the other end of a constant current supply having one end grounded; and a control section where, of a first one of the pixels and a second one of the pixels connected to the same one output signal line, taking the first pixel as one of the pixels subject to reading of pixel signal conforming to the incident light and the second pixel as non-subject one of the pixels set in accordance with a location of the first pixel, an output from the second pixel onto the output signal line is used at the time of outputting of the pixel signal from the first pixel onto the output signal line to effect control so that an electric potential difference

Abstract: A solid-state imaging apparatus including: a pixel section having a plurality of pixels arranged into a matrix, each pixel containing a reset section for resetting an accumulation section by supplying a potential retained at a reset line; a correlation double sampling circuit for suppressing a noise signal contained in the pixel signal; and a control section where, of a first one of the pixels and a second one of the pixels connected to the same one of a signal output line, when the first pixel is determined as a pixel subject to reset operation for obtaining an output of the pixel signal corresponding to a first potential supplied by the reset section, a voltage level of the same one signal output line at the time of the reset operation is set with using a pixel signal corresponding to a second potential supplied by the reset section of the second pixel.

Abstract: A solid state imaging device includes at least a plurality of first pixels, a plurality of second pixels, a signal line, and a fixing portion. The plurality of first pixels includes a photoelectric conversion portion which converts incident light into a signal charge and accumulates the converted signal charge. The plurality of second pixels includes the photoelectric conversion portion and is shaded so that the incident light is not incident on the photoelectric conversion portion. The signal line is electrically connected to the first or second pixel and is used to transmit a pixel signal, which corresponds to the signal charge and is output from the first or second pixel. The fixing portion fixes the level of the signal line so that the level of the signal line connected to the second pixel does not become equal to or more than a predetermined level or does not become equal to or less than the predetermined level.

Abstract: A solid-state imaging apparatus including: a pixel section having a plurality of pixels arranged into rows and columns each pixel containing at least a photoelectric conversion device for converting an incident light into signal electric charges, a transfer device for transferring the signal electric charges generated at the photoelectric conversion device, and an amplification device for amplifying the transferred signal electric charges; vertical signal lines provided in common for each column to read outputs of the pixels; constant current supplies respectively connected to the vertical signal lines; an amplification section for amplifying an image signal obtained from the pixels; a clip section for clipping the vertical signal line so that it does not fall below a predetermined voltage in a read period for outputting the signal electric charges generated at the photoelectric conversion device onto the vertical signal line; and a control section for changing a clip level of the clip section in accordance w

Abstract: A solid-state imaging apparatus including: a pixel section having a plurality of pixels two-dimensionally arranged into a matrix, each pixel containing a photoelectric conversion section for converting an incident light into signal electric charges, an accumulation section for accumulating the signal electric charges, a transfer section for transferring the signal electric charges to the accumulation section, an amplification section for amplifying and outputting as pixel signal the signal electric charges accumulated at the accumulation section, and a reset section for resetting the accumulation section by supplying an electric potential retained on a power supply line to the accumulation section, the pixel section having output signal lines provided column by column onto which the pixel signal is outputted, connected to the other end of a constant current supply having one end grounded; and a control section where, of a first one of the pixels and a second one of the pixels connected to the same one output

Abstract: A solid-state imaging apparatus including: a pixel section having a plurality of pixels arranged into a matrix, each pixel containing a reset section for resetting an accumulation section by supplying a potential retained at a reset line; a correlation double sampling circuit for suppressing a noise signal contained in the pixel signal; and a control section where, of a first one of the pixels and a second one of the pixels connected to the same one of a signal output line, when the first pixel is determined as a pixel subject to reset operation for obtaining an output of the pixel signal corresponding to a first potential supplied by the reset section, a voltage level of the same one signal output line at the time of the reset operation is set with using a pixel signal corresponding to a second potential supplied by the reset section of the second pixel.