Abstract: Provided is an atomic layer deposition device with a gas supply system for supplying respective gases into a chamber in which a target workpiece is removably disposed. The gas supply system includes a raw material gas supply line that supplies a raw material gas into the chamber; an ozone gas supply line that supplies an ozone gas of 80 vol % or higher into the chamber; and an inert gas supply line that supplies an inert gas into the chamber. The ozone gas supply line has an ozone gas buffer part that freely accumulates and seals therein the ozone gas in the ozone gas supply line and freely feeds the accumulated ozone gas into the chamber by opening and closing of an open/close valve mounted on the ozone gas supply line, and an ozone gas buffer part pressure gauge that measures a gas pressure inside the ozone gas buffer part.

Abstract: In a layered bonding material 10, a coefficient of linear expansion of a base material 11 is 5.5 to 15.5 ppm/K and a first surface and a second surface of the base material 11 are coated with pieces of lead-free solder 12a and 12b.

Abstract: Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

Abstract: In a layered bonding material 10, a coefficient of linear expansion of a base material 11 is 5.5 to 15.5 ppm/K and a first surface and a second surface of the base material 11 are coated with pieces of lead-free solder 12a and 12b.

Abstract: Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

Abstract: A reforming device (1) is provided with, on one end side of a chamber (2), a gas supply part (3) and, on the other end side of the chamber (2), a gas discharge part (4). A support part (5) for supporting a porous material (10) is provided between the gas supply part (3) and the gas discharge part (4) inside the chamber (4). Then, the unsaturated hydrocarbon gas of an unsaturated hydrocarbon supply device (31) and the ozone gas of an ozone generation device (32) are supplied into the chamber (2) via the gas supply part (3) so as to reform the outer-peripheral-side surface and the inner side surface of the porous material (10) accommodated inside the chamber (2). The gas inside the chamber (2) is sucked by the gas discharge part (4) and discharged to the outside of the chamber (2).

Abstract: An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2).

Abstract: A reforming device (1) is provided with, on one end side of a chamber (2), a gas supply part (3) and, on the other end side of the chamber (2), a gas discharge part (4). A support part (5) for supporting a porous material (10) is provided between the gas supply part (3) and the gas discharge part (4) inside the chamber (4). Then, the unsaturated hydrocarbon gas of an unsaturated hydrocarbon supply device (31) and the ozone gas of an ozone generation device (32) are supplied into the chamber (2) via the gas supply part (3) so as to reform the outer-peripheral-side surface and the inner side surface of the porous material (10) accommodated inside the chamber (2). The gas inside the chamber (2) is sucked by the gas discharge part (4) and discharged to the outside of the chamber (2).

Abstract: Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

Abstract: An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2).

Abstract: Disclosed is an oxide film forming device including a furnace body in which a workpiece is placed and a furnace cover. A mixed gas diffusion part is disposed on an inner side of the furnace cover via a shield plate. A mixed gas buffer space is provided in the mixed gas diffusion part. A shower head plate is disposed on the mixed gas diffusion part and opposed to the workpiece at a distance of 1 to 100 mm away from the workpiece. An ozone gas buffer space is provided in the furnace cover. A gas flow diffusion plate is disposed in the ozone gas buffer space. The shower head plate has formed therein first slits through which an ozone gas flows and second slits through which a mixed gas flows. The first slits and the second slits are alternately arranged side by side in a short-dimension direction of the slits.

Abstract: An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2).

Abstract: Disclosed is an oxide film forming device including a furnace body in which a workpiece is placed and a furnace cover. A mixed gas diffusion part is disposed on an inner side of the furnace cover via a shield plate. A mixed gas buffer space is provided in the mixed gas diffusion part. A shower head plate is disposed on the mixed gas diffusion part and opposed to the workpiece at a distance of 1 to 100 mm away from the workpiece. An ozone gas buffer space is provided in the furnace cover. A gas flow diffusion plate is disposed in the ozone gas buffer space. The shower head plate has formed therein first slits through which an ozone gas flows and second slits through which a mixed gas flows. The first slits and the second slits are alternately arranged side by side in a short-dimension direction of the slits.

Abstract: Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

Abstract: Disclosed is an oxide film formation method that includes supplying an ozone gas having an ozone concentration of 20 to 100 vol %, an unsaturated hydrocarbon gas and a raw material gas to a workpiece (7) placed in a pressure-reduced treatment furnace (5), whereby an oxide film is formed on a surface of the workpiece (7) by a chemical vapor deposition process. An example of the unsaturated hydrocarbon gas is an ethylene gas. An example of the raw material gas is a TEOS gas. The flow rate of the ozone gas is preferably set equal to or more than twice the total flow rate of the unsaturated hydrocarbon gas and the raw material gas. By this oxide film formation method, the oxide film is formed on the workpiece (7) at a high deposition rate even under low-temperature conditions of 200° C. or lower.

Abstract: Disclosed is an oxide film formation method that includes supplying an ozone gas having an ozone concentration of 20 to 100 vol %, an unsaturated hydrocarbon gas and a raw material gas to a workpiece (7) placed in a pressure-reduced treatment furnace (5), whereby an oxide film is formed on a surface of the workpiece (7) by a chemical vapor deposition process. An example of the unsaturated hydrocarbon gas is an ethylene gas. An example of the raw material gas is a TEOS gas. The flow rate of the ozone gas is preferably set equal to or more than twice the total flow rate of the unsaturated hydrocarbon gas and the raw material gas. By this oxide film formation method, the oxide film is formed on the workpiece (7) at a high deposition rate even under low-temperature conditions of 200° C. or lower.

Abstract: A solder alloy for joining a Cu pipe and/or a Fe pipe has an alloy composition comprising in mass %: Sb: 5.0% to 15.0%; Cu: 0.5% to 8.0%; Ni: 0.025% to 0.7%; and Co: 0.025% to 0.3%, with a balance being Sn. The alloy composition satisfies the relationship of 0.07?Co/Ni?6, where Co and Ni represent contents of Co and Ni in mass %, respectively.

Abstract: A flux applying device for applying flux to a surface of solder, wherein the flux applying device includes: a dipping means that applies the flux to the surface of the solder by dipping the solder into the flux; a load applying means that applies a predetermined load to the solder, the load applying means being provided at a upstream side of the dipping means; a constant speed conveying means that conveys the solder at a predetermined speed with being under load by the load applying means; a drying means that dries the solder to which the flux is applied; a cooling means that cools the dried solder; a conveying speed measurement means that measures a conveying speed of the solder; and a control means that controls the conveying speed of the solder.

Abstract: In the flux applying device, a control portion controls conveying rollers or the like so that thickness of flux applied to solder is controlled. The winding roller rotates so that the solder is conveyed at the conveying speed. The drawing-out roller applies any load (back tension) to the solder backward along the conveying direction of the solder when drawing out the solder. The solder is conveyed at the predetermined speed and dipped into the flux tank containing flux. The solder is pulled up from the flux tank at the conveying speed vertically. By pulling up the solder from the flux tank at the constant conveying speed vertically, the interfacial tension acts on the solder 9a and the flux, so that the flux having a uniform thickness according to the conveying speed remains on the surface and back surface of the solder.

Abstract: A flux applying device for applying flux to a surface of solder, wherein the flux applying device includes: a dipping means that applies the flux to the surface of the solder by dipping the solder into the flux; a load applying means that applies a predetermined load to the solder, the load applying means being provided at a upstream side of the dipping means; a constant speed conveying means that conveys the solder at a predetermined speed with being under load by the load applying means; a drying means that dries the solder to which the flux is applied; a cooling means that cools the dried solder; a conveying speed measurement means that measures a conveying speed of the solder; and a control means that controls the conveying speed of the solder.