Abstract: A method for manufacturing a rechargeable battery includes forming a mixture layer and an insulating layer on an electrode substrate having an edge extending in a specified direction so that an exposed portion where the electrode substrate is exposed extends between the edge and the insulating layer; pressing the mixture layer; and stretching an extension portion, located between the edge and the mixture layer, and the insulating layer in the specified direction. The stretching includes applying a stress greater than or equal to yield stress of the electrode substrate or greater than or equal to 0.2% proof stress of the electrode substrate and less than tensile strength of the electrode substrate to the extension portion, and applying a stress greater than or equal to yield stress of the insulating layer or greater than or equal to 0.2% proof stress of the insulating layer to the insulating layer.

Abstract: A method for manufacturing a rechargeable battery includes forming a mixture layer and an insulating layer on an electrode substrate having an edge extending in a specified direction so that an exposed portion where the electrode substrate is exposed extends between the edge and the insulating layer; pressing the mixture layer; and stretching an extension portion, located between the edge and the mixture layer, and the insulating layer in the specified direction. The stretching includes applying a stress greater than or equal to yield stress of the electrode substrate or greater than or equal to 0.2% proof stress of the electrode substrate and less than tensile strength of the electrode substrate to the extension portion, and applying a stress greater than or equal to yield stress of the insulating layer or greater than or equal to 0.2% proof stress of the insulating layer to the insulating layer.

Abstract: A first material layer, a second material layer, and a photoresist layer may be formed over a substrate. The second material layer may be patterned by transfer of a lithographic pattern therethrough. A conformal spacer layer may be formed over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus. Spacer films may be formed by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus. The first material layer may be anisotropically etched using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus. A high fidelity pattern may be transferred into the first material layer with reduced line edge roughness, reduced line width roughness, and without enlargement of lateral dimensions of openings in the first material layer.

Abstract: A first material layer, a second material layer, and a photoresist layer may be formed over a substrate. The second material layer may be patterned by transfer of a lithographic pattern therethrough. A conformal spacer layer may be formed over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus. Spacer films may be formed by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus. The first material layer may be anisotropically etched using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus. A high fidelity pattern may be transferred into the first material layer with reduced line edge roughness, reduced line width roughness, and without enlargement of lateral dimensions of openings in the first material layer.

Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.