Patents by Inventor Naoto Yamade
Naoto Yamade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154039Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: ApplicationFiled: January 4, 2024Publication date: May 9, 2024Inventors: Shunpei YAMAZAKI, Katsuaki TOCHIBAYASHI, Ryota HODO, Kentaro SUGAYA, Naoto YAMADE
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Patent number: 11967649Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.Type: GrantFiled: August 25, 2022Date of Patent: April 23, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshihiko Takeuchi, Naoto Yamade, Yutaka Okazaki, Sachiaki Tezuka, Shunpei Yamazaki
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Publication number: 20240128380Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: December 1, 2023Publication date: April 18, 2024Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
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Patent number: 11955538Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: GrantFiled: April 18, 2023Date of Patent: April 9, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Naoto Yamade, Hiroshi Fujiki, Tomoaki Moriwaka, Shunsuke Kimura
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Patent number: 11869979Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: GrantFiled: April 22, 2022Date of Patent: January 9, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Katsuaki Tochibayashi, Ryota Hodo, Kentaro Sugaya, Naoto Yamade
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Publication number: 20230299183Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: ApplicationFiled: April 18, 2023Publication date: September 21, 2023Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Toshihiko TAKEUCHI, Naoto YAMADE, Hiroshi FUJIKI, Tomoaki MORIWAKA, Shunsuke KIMURA
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Patent number: 11670705Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: GrantFiled: February 16, 2021Date of Patent: June 6, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Naoto Yamade, Hiroshi Fujiki, Tomoaki Moriwaka, Shunsuke Kimura
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Publication number: 20220416089Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.Type: ApplicationFiled: August 25, 2022Publication date: December 29, 2022Inventors: Toshihiko TAKEUCHI, Naoto YAMADE, Yutaka OKAZAKI, Sachiaki TEZUKA, Shunpei YAMAZAKI
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Patent number: 11495691Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.Type: GrantFiled: May 27, 2019Date of Patent: November 8, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshihiko Takeuchi, Naoto Yamade, Yutaka Okazaki, Sachiaki Tezuka, Shunpei Yamazaki
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Publication number: 20220352387Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: July 11, 2022Publication date: November 3, 2022Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
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Publication number: 20220246765Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: ApplicationFiled: April 22, 2022Publication date: August 4, 2022Inventors: Shunpei YAMAZAKI, Katsuaki TOCHIBAYASHI, Ryota HODO, Kentaro SUGAYA, Naoto YAMADE
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Patent number: 11393930Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: GrantFiled: August 31, 2020Date of Patent: July 19, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Okazaki, Akihisa Shimomura, Naoto Yamade, Tomoya Takeshita, Tetsuhiro Tanaka
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Publication number: 20220208988Abstract: A semiconductor device with less variations in transistor characteristics is provided.Type: ApplicationFiled: April 27, 2020Publication date: June 30, 2022Inventors: Shunpei YAMAZAKI, Tsutomu MURAKAWA, Shinya SASAGAWA, Naoto YAMADE, Takashi HAMADA, Hiroki KOMAGATA
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Patent number: 11316051Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.Type: GrantFiled: February 21, 2019Date of Patent: April 26, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Katsuaki Tochibayashi, Ryota Hodo, Kentaro Sugaya, Naoto Yamade
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Publication number: 20210210640Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.Type: ApplicationFiled: May 27, 2019Publication date: July 8, 2021Inventors: Toshihiko TAKEUCHI, Naoto YAMADE, Yutaka OKAZAKI, Sachiaki TEZUKA, Shunpei YAMAZAKI
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Publication number: 20210167194Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: ApplicationFiled: February 16, 2021Publication date: June 3, 2021Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Toshihiko TAKEUCHI, Naoto YAMADE, Hiroshi FUJIKI, Tomoaki MORIWAKA, Shunsuke KIMURA
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Patent number: 11004961Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: GrantFiled: February 28, 2018Date of Patent: May 11, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Naoto Yamade, Hiroshi Fujiki, Tomoaki Moriwaka, Shunsuke Kimura
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Publication number: 20210125988Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes an oxide in a channel formation region; the semiconductor device includes a first transistor, a second transistor, a first wiring, a second wiring, and a third wiring, and the first transistor includes the oxide over a first insulator, a second insulator over the oxide, a first conductor over the second insulator, a third insulator over the first conductor, and a fourth insulator in contact with the second insulator, the first conductor, and the third insulator. The second transistor includes the oxide over a fifth insulator, a sixth insulator over the oxide, a second conductor over the sixth insulator, a seventh insulator over the second conductor, and an eighth insulator in contact with the sixth insulator, the second conductor, and the seventh insulator.Type: ApplicationFiled: February 27, 2018Publication date: April 29, 2021Applicant: Semiconductors Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Toshihiko TAKEUCHI, Naoto YAMADE, Hiroshi FUJIKI, Yuki HATA, Shuhei NAGATSUKA
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Publication number: 20210057587Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: August 31, 2020Publication date: February 25, 2021Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
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Patent number: 10910359Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.Type: GrantFiled: September 5, 2019Date of Patent: February 2, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Okuno, Kosei Nei, Hiroaki Honda, Naoto Yamade, Hiroshi Fujiki