Abstract: To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which is a metal layer forming a Schottky contact with a main surface of the semiconductor layer, a second electrode forming an ohmic contact with an opposite main surface of the semiconductor layer, a buried layer of a second conductivity type formed within the semiconductor layer so as not to be in contact with the first electrode, where the second conductivity type has a different charge carrier from the first conductivity type, and a guard ring of the second conductivity type formed within the semiconductor layer so as to be in contact with the first electrode and also to surround the buried layer without contacting with the buried layer.

Abstract: To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which is a metal layer forming a Schottky contact with a main surface of the semiconductor layer, a second electrode forming an ohmic contact with an opposite main surface of the semiconductor layer, a buried layer of a second conductivity type formed within the semiconductor layer so as not to be in contact with the first electrode, where the second conductivity type has a different charge carrier from the first conductivity type, and a guard ring of the second conductivity type formed within the semiconductor layer so as to be in contact with the first electrode and also to surround the buried layer without contacting with the buried layer.

Abstract: To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which is a metal layer forming a Schottky contact with a main surface of the semiconductor layer, a second electrode forming an ohmic contact with an opposite main surface of the semiconductor layer, a buried layer of a second conductivity type formed within the semiconductor layer so as not to be in contact with the first electrode, where the second conductivity type has a different charge carrier from the first conductivity type, and a guard ring of the second conductivity type formed within the semiconductor layer so as to be in contact with the first electrode and also to surround the buried layer without contacting with the buried layer.

Abstract: To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which is a metal layer forming a Schottky contact with a main surface of the semiconductor layer, a second electrode forming an ohmic contact with an opposite main surface of the semiconductor layer, a buried layer of a second conductivity type formed within the semiconductor layer so as not to be in contact with the first electrode, where the second conductivity type has a different charge carrier from the first conductivity type, and a guard ring of the second conductivity type formed within the semiconductor layer so as to be in contact with the first electrode and also to surround the buried layer without contacting with the buried layer.