Patents by Inventor Naotsugu Hoshi
Naotsugu Hoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11251052Abstract: A plasma processing method includes a substrate processing step of performing predetermined processing on a target substrate loaded into a chamber by using plasma of a hydrogen-containing gas and unloading the processed substrate from the chamber; and an in-chamber processing step of processing surfaces of components in the chamber by plasma of an oxygen-containing gas after the substrate processing step is performed at least once. The substrate processing step is performed again at least once after the in-chamber processing step.Type: GrantFiled: June 28, 2018Date of Patent: February 15, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Naotsugu Hoshi, Tetsuya Ohishi, Shinji Higashitsutsumi
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Patent number: 10316835Abstract: In a method of an embodiment, a pressure sensor is selected from first and second pressure sensors according to a set flow rate. A measurable maximum pressure of the second pressure sensor is higher than a measurable maximum pressure of first pressure sensor. The target pressure of a chamber is determined according to the set flow rate. Until the pressure of the chamber reaches the target pressure after gas is started to be output from the flow rate controller to the chamber at an output flow rate according to the set flow rate and a pressure controller provided between the chamber and an exhaust apparatus is closed, the pressure of the chamber is measured by the selected pressure sensor. The output flow rate of the flow rate controller is determined from a rate of rise of the pressure of the chamber.Type: GrantFiled: October 12, 2017Date of Patent: June 11, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Jun Yamashima, Shinichiro Hayasaka, Toshihiro Tsuruta, Hiroshi Fujii, Junichi Akiba, Naoya Jami, Naotsugu Hoshi
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Publication number: 20190006188Abstract: A plasma processing method includes a substrate processing step of performing predetermined processing on a target substrate loaded into a chamber by using plasma of a hydrogen-containing gas and unloading the processed substrate from the chamber; and an in-chamber processing step of processing surfaces of components in the chamber by plasma of an oxygen-containing gas after the substrate processing step is performed at least once. The substrate processing step is performed again at least once after the in-chamber processing step.Type: ApplicationFiled: June 28, 2018Publication date: January 3, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Naotsugu HOSHI, Tetsuya OHISHI, Shinji HIGASHITSUTSUMI
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Publication number: 20180106247Abstract: In a method of an embodiment, a pressure sensor is selected from first and second pressure sensors according to a set flow rate. A measurable maximum pressure of the second pressure sensor is higher than a measurable maximum pressure of first pressure sensor. The target pressure of a chamber is determined according to the set flow rate. Until the pressure of the chamber reaches the target pressure after gas is started to be output from the flow rate controller to the chamber at an output flow rate according to the set flow rate and a pressure controller provided between the chamber and an exhaust apparatus is closed, the pressure of the chamber is measured by the selected pressure sensor. The output flow rate of the flow rate controller is determined from a rate of rise of the pressure of the chamber.Type: ApplicationFiled: October 12, 2017Publication date: April 19, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Jun YAMASHIMA, Shinichiro HAYASAKA, Toshihiro TSURUTA, Hiroshi FUJII, Junichi AKIBA, Naoya JAMI, Naotsugu HOSHI
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Patent number: 9384999Abstract: A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.Type: GrantFiled: October 21, 2008Date of Patent: July 5, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Naotsugu Hoshi, Noriyuki Kobayashi
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Patent number: 9130018Abstract: A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.Type: GrantFiled: August 13, 2012Date of Patent: September 8, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Naotsugu Hoshi, Noriyuki Kobayashi
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Patent number: 8404596Abstract: A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.Type: GrantFiled: May 9, 2011Date of Patent: March 26, 2013Assignee: Tokyo Electron LimitedInventors: Shigeru Tahara, Naotsugu Hoshi
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Publication number: 20120309203Abstract: A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.Type: ApplicationFiled: August 13, 2012Publication date: December 6, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Naotsugu HOSHI, Noriyuki Kobayashi
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Patent number: 8252694Abstract: A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.Type: GrantFiled: November 18, 2008Date of Patent: August 28, 2012Assignee: Tokyo Electron LimitedInventors: Naotsugu Hoshi, Noriyuki Kobayashi
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Publication number: 20110204026Abstract: A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.Type: ApplicationFiled: May 9, 2011Publication date: August 25, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeru TAHARA, Naotsugu Hoshi
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Patent number: 7964511Abstract: A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.Type: GrantFiled: August 25, 2006Date of Patent: June 21, 2011Assignee: Tokyo Electron LimitedInventors: Shigeru Tahara, Naotsugu Hoshi
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Patent number: 7799703Abstract: A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.Type: GrantFiled: February 4, 2008Date of Patent: September 21, 2010Assignee: Tokyo Electron LimitedInventors: Kazuhiro Kubota, Naotsugu Hoshi, Yuki Chiba, Ryuichi Asako
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Publication number: 20090137127Abstract: A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.Type: ApplicationFiled: November 18, 2008Publication date: May 28, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Naotsugu HOSHI, Noriyuki Kobayashi
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Publication number: 20090111275Abstract: A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.Type: ApplicationFiled: October 21, 2008Publication date: April 30, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Naotsugu HOSHI, Noriyuki Kobayashi
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Publication number: 20080194115Abstract: A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.Type: ApplicationFiled: February 4, 2008Publication date: August 14, 2008Applicant: TOKYO ELECTON LIMITEDInventors: Kazuhiro KUBOTA, Naotsugu Hoshi, Yuki Chiba, Ryuichi Asako
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Publication number: 20070059933Abstract: A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.Type: ApplicationFiled: August 25, 2006Publication date: March 15, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeru Tahara, Naotsugu Hoshi