Abstract: A semiconductor light emitting device includes a light emitting chip that includes a semiconductor layer at a first surface. A transparent film is provided on the semiconductor layer and forms an interface therewith. A phosphor resin layer, including a resin and a phosphor, is provided on the transparent film. A refractive index of the transparent film is greater than a refractive index of the semiconductor layer.

Abstract: A semiconductor light emitting device includes a light emitting chip that includes a semiconductor layer at a first surface. A transparent film is provided on the semiconductor layer and forms an interface therewith. A phosphor resin layer, including a resin and a phosphor, is provided on the transparent film. A refractive index of the transparent film is greater than a refractive index of the semiconductor layer.

Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: A light emitting device includes a light emitting element disposed on a portion of a first lead frame element, a first resin including a fluorescent material, and a second resin. The first resin is above the light emitting element. The second resin is between the first resin and the first lead frame element. In some embodiments, the second resin includes a filler material that reflects light emitted by the light emitting element. In some embodiments, the light emitting device includes a protective diode connected in reverse parallel with the light emitting element. In some embodiments, a transparent resin may be disposed first and second resins.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: A semiconductor device is provided that includes a semiconductor layer and an electrode coupled to a semiconductor layer. The electrode includes first and second end portions, the first end portion being closer to the semiconductor layer than the second end portion. The first end portion is formed to have crystals of a first grain size, and the second end portion is formed to have crystals of a second grain size that is larger than the first grain size.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: According to one embodiment, an LED package includes a first lead frame, a second lead frame, an LED chip, a wire, and a resin body. The first lead frame and the second lead frame are arranged with a space between each other. The LED chip is provided above the first lead frame and the second lead frame. The LED chip has a first terminal connected to the first lead frame and a second terminal connected to the second lead frame. The wire connects the first terminal to the first lead frame. The resin body covers the LED chip as well as a top surface, a part of a bottom surface, and a part of an edge surface of each of the first lead frame and the second lead frame. A remaining portion of each of the bottom surfaces and a remaining portion of each of the edge surfaces are exposed.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first and second frames, the first frames being disposed alternately with the second frames to be apart from the second frames, a light emitting element being affixed to each of the first frames and connected via a metal wire to an adjacent second frame; forming a first resin on a first major surface of the metal plate to cover the first and second frames, and the light emitting elements; making a trench from a second major surface side; and filling a second resin into an interior of the trench from the first major surface side. The method further includes forming the resin packages by dividing the second resin along the trench, an outer edge of the first resin being covered with the second resin.

Abstract: According to one embodiment, an LED package includes first and second lead frames spaced from each other, and an LED chip. Each of the first and second lead frames includes a base portion and a plurality of extending portions extending from the base portion. A part of a lower surface of the base portion, side surfaces of the base portion, lower surfaces of the extending portions and side surfaces of the extending portions are covered by resin. A remaining part of the lower surface of the base portion and tip surfaces of the extending portions are not covered by resin. The part of the lower surface of the base portion includes a first edge of the first lead frame and a second edge of the second lead frame. The first edge and the second edge are opposed each other.

Abstract: According to one embodiment, an LED module includes a board, an interconnection and an LED package. The interconnection is formed on an upper surface of the board. The LED package is mounted on the board. The LED package includes first and second lead frames disposed to be apart from each other, and connected to portions of the interconnection insulated from each other. The LED package includes an LED chip provided above the first and second lead frames. The LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the LED package includes a resin body covering an upper surface, portions of a lower surface and an edge surface of each of the first and second lead frames, also covering the LED chip, but exposing remaining portions of the lower surface and the edge surface. And, an appearance of the resin body is an appearance of the LED package.

Abstract: According to one embodiment, an LED package includes a first and a second lead frame separated from each other, an LED chip, a wire and a resin body. The LED chip is provided above the first and second lead frames, and has a pair of terminals provided on an upper surface of the LED chip. One of the terminals is connected to the first lead frame and one other terminal is connected to the second lead frame. The wire is drawn out from the one terminal horizontally to connect the one terminal to the first lead frame. The resin body covers the LED chip and the wire, an upper surface, a part of a lower surface and a part of an end surface of each of the first and second lead frames to expose a remaining part of the lower surface and a remaining part of the lower surface.

Abstract: According to one embodiment, an LED package includes first and second lead frames spaced from each other, and an LED chip. Each of the first and second lead frames includes a base portion and a plurality of extending portions extending from the base portion. A part of a lower surface of the base portion, side surfaces of the base portion, lower surfaces of the extending portions and side surfaces of the extending portions are covered by resin. A remaining part of the lower surface of the base portion and tip surfaces of the extending portions are not covered by resin. The part of the lower surface of the base portion includes a first edge of the first lead frame and a second edge of the second lead frame. The first edge and the second edge are opposed each other.

Abstract: According to one embodiment, an LED module includes a board, an interconnection and an LED package. The interconnection is formed on an upper surface of the board. The LED package is mounted on the board. The LED package includes first and second lead frames disposed to be apart from each other, and connected to portions of the interconnection insulated from each other. The LED package includes an LED chip provided above the first and second lead frames. The LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the LED package includes a resin body covering an upper surface, portions of a lower surface and an edge surface of each of the first and second lead frames, also covering the LED chip, but exposing remaining portions of the lower surface and the edge surface. And, an appearance of the resin body is an appearance of the LED package.

Abstract: According to one embodiment, an LED package includes a first lead frame, a second lead frame, an LED chip, a wire, and a resin body. The first lead frame and the second lead frame are arranged with a space between each other. The LED chip is provided above the first lead frame and the second lead frame. The LED chip has a first terminal connected to the first lead frame and a second terminal connected to the second lead frame. The wire connects the first terminal to the first lead frame. The resin body covers the LED chip as well as a top surface, a part of a bottom surface, and a part of an edge surface of each of the first lead frame and the second lead frame. A remaining portion of each of the bottom surfaces and a remaining portion of each of the edge surfaces are exposed.