Abstract: A nitric oxide administration device 1 includes a first flow path 101 including a first intake port 101a and an oxygen supply port 101b, an oxygen generation unit 100 which is arranged in the first flow path 101 and which generates concentrated oxygen from air introduced via the first intake port 101a, the generated concentrated oxygen being supplied via the oxygen supply port 101b, a second flow path 201 which is branched from the first flow path 101 and which includes an NO supply port 201b, and an NO generation unit 200 which is arranged in the second flow path 201 and which generates NO from gas distributed from the first flow path 101, the generated NO being supplied via the NO supply port 201b.

Abstract: A semiconductor storage device includes: a first semiconductor layer through first conductive layers; a gate insulating film between the first conductive layers and the first semiconductor layer; a first structure facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layer and the first structure; a third semiconductor layer between the second semiconductor layer and the first conductive layers; a fourth semiconductor layer including a first portion along a bottom surface of the third semiconductor layer and a second portion along a top surface of the second semiconductor layer; and a first insulating layer, between the first and second portions, including a first region spaced from the first structure with a distance longer than a first distance that contains a nitride film, and a second region spaced from the first structure with a distance shorter than the first distance that does not contain nitrogen.

Abstract: According to one embodiment, a semiconductor memory device includes interconnect layers stacked above a substrate; a memory pillar configured to penetrate the interconnect layers; a first member and a second member; and a dividing portion provided between the first member and the second member. The dividing portion includes insulating layers. The insulating layers each include a first portion and a second portion. The first portion is provided between the first member and the second portion. The second portion is provided between the first portion and the second member. The first portion and the second portion each have an individual arc shape when viewed from a top and are in contact with each other.

Abstract: The device of the invention is equipped with a pressure sensor and a control unit, and the control unit judges a point at which a pressure gradient calculated from a signal of the pressure sensor becomes larger in the absolute value than a pressure gradient threshold as an inspiration sensing point and starts respiratory gas supply. In addition, the device judges from a frequency of the inspiration sensing point during predetermined time whether a pressure gradient threshold used as a criterion for the inspiration sensing point corresponds to an activity state of the user, and when the pressure gradient threshold does not correspond to the activity state, switches the pressure gradient threshold to another threshold and thus fits the pressure gradient threshold to the activity state.

Abstract: A nitric oxide administration device 1 includes a first flow path 101 including a first intake port 101a and an oxygen supply port 101b, an oxygen generation unit 100 which is arranged in the first flow path 101 and which generates concentrated oxygen from air introduced via the first intake port 101a, the generated concentrated oxygen being supplied via the oxygen supply port 101b, a second flow path 201 which is branched from the first flow path 101 and which includes an NO supply port 201b, and an NO generation unit 200 which is arranged in the second flow path 201 and which generates NO from gas distributed from the first flow path 101, the generated NO being supplied via the NO supply port 201b.

Abstract: A relay administration device 50 for use in connection to a nitric oxide administration device 20 which supplies NO generated from air, includes an NO densitometer 506, a flowmeter 507 or pressure gauge 504, a control unit 600 which calculates a dosage of NO to be administered to a patient based on an NO concentration measured by the NO densitometer 506 and a value of the flowmeter 507 or the pressure gauge 504, and a two-way valve 505 which is configured to increase a flow rate when the calculated dosage is less than a predetermined value and to decrease the flow rate when the calculated dosage is greater than a predetermined value.

Abstract: The device of the invention is equipped with a pressure sensor and a control unit, and the control unit judges a point at which a pressure gradient calculated from a signal of the pressure sensor becomes larger than a pressure gradient threshold as an inspiration sensing point and starts respiratory gas supply. In addition, the device judges from a frequency of the inspiration sensing point during predetermined time whether a pressure gradient threshold used as a criterion for the inspiration sensing point corresponds to an activity state of the user, and when the pressure gradient threshold does not correspond to the activity state, switches the pressure gradient threshold to another threshold and thus fits the pressure gradient threshold to the activity state.

Abstract: A memory device includes a substrate and a stacked body arranged along a first direction. The stacked body includes electrode films. A configuration of an end portion in a second direction of the stacked body is a staircase configuration. Steps corresponding to the electrode films are formed in the staircase configuration. A first distance between a first step and an end edge of the stacked body in the second direction is shorter than a second distance between a second step and the end edge in the second direction. The first step is positioned at an end portion in a third direction of the stacked body. The second step is positioned at a central portion in the third direction of the stacked body. The first and second steps correspond to two of the electrode films positioned at the same level when counting along the first direction from the substrate side.

Abstract: A memory device includes a substrate and a stacked body arranged along a first direction. The stacked body includes electrode films. A configuration of an end portion in a second direction of the stacked body is a staircase configuration. Steps corresponding to the electrode films are formed in the staircase configuration. A first distance between a first step and an end edge of the stacked body in the second direction is shorter than a second distance between a second step and the end edge in the second direction. The first step is positioned at an end portion in a third direction of the stacked body. The second step is positioned at a central portion in the third direction of the stacked body. The first and second steps correspond to two of the electrode films positioned at the same level when counting along the first direction from the substrate side.

Abstract: According to one embodiment, a semiconductor device includes a first conductive line and a second conductive line including a first extension region in which the first conductive line and the second conductive line extend in a first direction, and a bend region in which the first conductive line and the second conductive line bend with respect to the first direction, a first dummy pattern and a second dummy pattern arranged on extension regions beyond the bend region of the first conductive line and the second conductive line, respectively, in the first direction, a first contact pad and a second contact pad formed beyond the bend region in the first direction, and connected to the first conductive line and the second conductive line, respectively.

Abstract: A non-transitory computer readable recording medium stores a print job generating program that causes a computer to perform as a setting unit, and a print job generating unit that generates a print job, based on a content of setting that is set using the setting unit by a user. In a print system environment that executes a process based on the print job, a first setting for not performing a first process, regardless of a print setting included in the print job, has been made in the print system environment for a first function of a first post-processing device included in an image forming device. The setting unit allows the user to set, alternatively to the first process, a second process performed by a second function of a second post-processing device included in the print system environment.

Abstract: A semiconductor device including a semiconductor substrate having a hook-up region; wirings extending in a first direction above the semiconductor substrate and being aligned with a first spacing between one another, every two wirings forming pairs of wirings, each pair having a first portion being bent in a second direction different from the first direction in the hook-up region, the wirings of each pair being spaced from one another by a first spacing, the pairs being spaced from one another by a second spacing greater than the first spacing; and fringe patterns each being formed on a first side of each of the wirings of each of the pairs, the first side facing the second spacing.

Abstract: According to one embodiment, a semiconductor device includes a first conductive line and a second conductive line including a first extension region in which the first conductive line and the second conductive line extend in a first direction, and a bend region in which the first conductive line and the second conductive line bend with respect to the first direction, a first dummy pattern and a second dummy pattern arranged on extension regions beyond the bend region of the first conductive line and the second conductive line, respectively, in the first direction, a first contact pad and a second contact pad formed beyond the bend region in the first direction, and connected to the first conductive line and the second conductive line, respectively.

Abstract: An information processing apparatus includes: a display processing unit configured to display a preview of content of an image file; an acquisition unit configured to acquire designation information which designates an image to be printed in the image file in units of a page; and a creation unit configured to create a print job in which a page designated by the designation information is to be printed.

Abstract: In a manufacturing method, gate electrode materials and a hard-mask material are deposited above a substrate. First mandrels are formed on the hard-mask material in a region of cell array. A second mandrel is formed on the hard-mask material in a region of a selection gate transistor. First sidewall-masks are formed on side-surfaces of the first mandrels. A second sidewall-mask is formed on a side-surface of the second mandrel. An upper side-surface of the second sidewall-mask is exposed. A sacrificial film is embedded between the first sidewall-masks. A sacrificial spacer is formed on the upper side-surface of the second sidewall-mask. A resist film covers the second mandrel. An outer edge of the resist film is located between the first mandrel closest to the second mandrel and the sacrificial spacer. The first mandrels are removed using the resist film as a mask. And, the sacrificial film and spacer are removed.

Abstract: In a manufacturing method, gate electrode materials and a hard-mask material are deposited above a substrate. First mandrels are formed on the hard-mask material in a region of cell array. A second mandrel is formed on the hard-mask material in a region of a selection gate transistor. First sidewall-masks are formed on side-surfaces of the first mandrels. A second sidewall-mask is formed on a side-surface of the second mandrel. An upper side-surface of the second sidewall-mask is exposed. A sacrificial film is embedded between the first sidewall-masks. A sacrificial spacer is formed on the upper side-surface of the second sidewall-mask. A resist film covers the second mandrel. An outer edge of the resist film is located between the first mandrel closest to the second mandrel and the sacrificial spacer. The first mandrels are removed using the resist film as a mask. And, the sacrificial film and spacer are removed.

Abstract: A non-transitory computer readable recording medium stores a print job generating program that causes a computer to perform as a setting unit, and a print job generating unit that generates a print job, based on a content of setting that is set using the setting unit by a user. In a print system environment that executes a process based on the print job, a first setting for not performing a first process, regardless of a print setting included in the print job, has been made in the print system environment for a first function of a first post-processing device included in an image forming device. The setting unit allows the user to set, alternatively to the first process, a second process performed by a second function of a second post-processing device included in the print system environment.

Abstract: A thermocouple (6) is provided for detecting a temperature of the tip of a needle electrode (1). The thermocouple (6) includes a tip connecting portion (18) where the tips of a pair of coated wires (8, 9) are electrically connected to each other and a tip coated portion where the tip connecting portion (18) is coated with polyolefin synthetic resin. The tip coated portion is bonded and fixed to the needle electrode (1). They provide a needle electrode device for medical application capable of being compact with the needle electrode provided with the thermocouple and of detecting a temperature using the thermocouple with high accuracy.