Abstract: There is provided a Group III nitride semiconductor light-emitting device in which reduction in the light emission amount in an operation at a high temperature is suppressed. The light-emitting device has an n-side superlattice layer, a light-emitting layer, and a p-type cladding layer. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. A pit diameter D1 of a first pit at an interface between the light-emitting layer and the n-side superlattice layer is larger than a pit diameter D2 of the first pit at an interface between the light-emitting layer and the p-type cladding layer. The pit diameter D1 and the pit diameter D2 satisfy the following condition: 0.15?(D1?D2)/T?1.0. Here, the thickness T is the thickness of the light-emitting layer.

Abstract: A chimeric non-human animal having an in vivo human hepatocyte population, wherein the effects of non-human animal cells on drug metabolism are suppressed or deleted is provided. A method for producing a chimeric non-human animal that lacks a drug-metabolizing system or has a suppressed drug-metabolizing system and is provided with a drug-metabolizing system driven by human hepatocytes, is provided. The method comprises transplanting human hepatocytes into a non-human animal characterized by (i) being immunodeficient, (ii) having liver damage, and (iii) lacking the functions of an endogenous Cyp3a gene.

Abstract: A semiconductor substrate includes a sapphire substrate including a c-plane main surface and a groove in a surface thereof, the groove including side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. The side surfaces of the groove are an a-plane of sapphire. An axis of the Group III nitride semiconductor layer, perpendicular to one of the side surface of the groove, is a c-axis of Group III nitride semiconductor. A plane of the Group III nitride semiconductor, parallel to the main surface of the sapphire substrate, is an a-plane of Group III nitride semiconductor.

Abstract: A semiconductor substrate includes a sapphire substrate including a c-plane main surface and a groove in a surface thereof, the groove including side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. The side surfaces of the groove are an a-plane of sapphire. An axis of the Group III nitride semiconductor layer, perpendicular to one of the side surface of the groove, is a c-axis of Group III nitride semiconductor. A plane of the Group III nitride semiconductor, parallel to the main surface of the sapphire substrate, is an a-plane of Group III nitride semiconductor.

Abstract: The surface of a sapphire substrate having a c-plane main surface is patterned by ICP dry etching. The patterned sapphire substrate is thermally treated in a hydrogen or nitrogen atmosphere at a temperature of less than 700° C. or at a temperature of more than 800° C. to 1100° C. An AlN buffer layer is formed by magnetron sputtering on the surface on the patterned side of the sapphire substrate heated at a temperature of 200° C. to less than 700° C. On the buffer layer, a Group III nitride semiconductor layer having a c-plane main surface is formed so as to have a thickness of 1 ?m to 10 ?m by MOCVD.

Abstract: A semiconductor substrate includes a sapphire substrate including an a-plane main surface and a groove in a surface thereof, the groove includes side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. Both side surfaces of the groove assume a c-plane of sapphire. An axis perpendicular to one of the side surfaces of the groove of the Group III nitride semiconductor layer assumes a c-axis of Group III nitride semiconductor. A plane parallel to the main surface of the sapphire substrate of the Group III nitride semiconductor layer assumes an m-plane of Group III nitride semiconductor.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×1020/cm3. A plurality of regions with a nitrogen polarity is formed in the crystals with a Group III element polarity, and thus the p cladding layer has a hexagonal columnar concave and convex configuration on the surface thereof. Subsequently, a p contact layer of GaN is formed by the MOCVD method, in a film along the concave and convex configuration on the p cladding layer.

Abstract: A chimeric non-human animal having an in vivo human hepatocyte population, wherein the effects of non-human animal cells on drug metabolism are suppressed or deleted is provided. A method for producing a chimeric non-human animal that lacks a drug-metabolizing system or has a suppressed drug-metabolizing system and is provided with a drug-metabolizing system driven by human hepatocytes, is provided. The method comprises transplanting human hepatocytes into a non-human animal characterized by (i) being immunodeficient, (ii) having liver damage, and (iii) lacking the functions of an endogenous Cyp3a gene.

Abstract: A semiconductor substrate includes a sapphire substrate including an a-plane main surface and a groove in a surface thereof, the groove includes side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. Both side surfaces of the groove assume a c-plane of sapphire. An axis perpendicular to one of the side surfaces of the groove of the Group III nitride semiconductor layer assumes a c-axis of Group III nitride semiconductor. A plane parallel to the main surface of the sapphire substrate of the Group III nitride semiconductor layer assumes an m-plane of Group III nitride semiconductor.

Abstract: The surface of a sapphire substrate having a c-plane main surface is patterned by ICP dry etching. The patterned sapphire substrate is thermally treated in a hydrogen or nitrogen atmosphere at a temperature of less than 700° C. or at a temperature of more than 800° C. to 1100° C. An AlN buffer layer is formed by magnetron sputtering on the surface on the patterned side of the sapphire substrate heated at a temperature of 200° C. to less than 700° C. On the buffer layer, a Group III nitride semiconductor layer having a c-plane main surface is formed so as to have a thickness of 1 ?m to 10 ?m by MOCVD.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate.

Abstract: A group III nitride semiconductor light-emitting element having a rectangular shape in a planar view, the element comprises an n-electrode connecting to an n-type layer and a p-electrode connecting to a p-type layer, on a same plane side; wherein the n-electrode has a n-wiring-shaped part that is wiring-shaped and extending along a first side of the rectangular shape; the p-electrode has a p-wiring-shaped part that is wiring-shaped and extending along the first side of the rectangular shape; when a distance that is between the n-wiring-shaped part and the p-wiring-shaped part is a, and a distance that is between the one side of the rectangular shape and at least one of the n-wiring-shaped part and the p-wiring-shaped part and that is nearest to the first side is b, the n-wiring-shaped part and the p-wiring-shaped part are arranged such that the distances a and b satisfy 1.65?a/b?7.00.

Abstract: To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes. A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 ? or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×1020/cm3. A plurality of regions with a nitrogen polarity is formed in the crystals with a Group III element polarity, and thus the p cladding layer has a hexagonal columnar concave and convex configuration on the surface thereof. Subsequently, a p contact layer of GaN is formed by the MOCVD method, in a film along the concave and convex configuration on the p cladding layer.

Abstract: To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes. A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 ? or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate.