Abstract: In a ship control system of one embodiment, a route command unit outputs a route command including a target ship position and a target bow direction of a ship. An information detector detects ship information including an actual ship position and an actual bow direction of a ship. An external force vector estimation unit estimates an external force vector received by a ship, using the ship information and a hull motion model related to a hull motion of the ship. A control command unit controls both rotational frequency of a main engine and a rudder angle of a ship, based on the route command, the ship information, and the external force vector.

Abstract: A ship monitoring system includes: a shipboard information processing apparatus and including a shipboard communication unit and an information acquisition unit; and a support information processing apparatus and including: a support side communication unit capable of communicating with the shipboard communication unit; a time lag identification unit; and a state prediction unit. The time lag identification unit identifies a time from transmission of the ship motion information from the shipboard communication unit to reception of the ship motion information by the support side communication unit as a reception time lag. The state prediction unit inputs the ship motion information and the reception time lag to a ship motion model related to the ship motion of the ship to predict a motion state of the ship ahead of a motion state of the ship indicated by the ship motion information by a period of time based on the reception time lag.

Abstract: In a ship control system of one embodiment, a main engine controller performs, when controlling the rotational frequency of a main engine based on a target ship speed of a ship, feedback control of an actual ship speed of the ship to perform ship speed control for bringing the actual ship speed closer to the target ship speed. A turning judgment unit judges whether or not the ship will turn. A control change unit performs, when the turning judgment unit has judged that the ship will turn, lowering processing for lowering the responsiveness of the ship speed control.

Abstract: A storage unit stores information indicating a backup history of data associated with each of a plurality of virtual machines operating on one or more information processing apparatuses. An operation unit determines an order of migrating each of the plurality of virtual machines to one or more other information processing apparatuses, based on the information indicating the backup history. The operation unit controls the information processing apparatus so as to migrate each of the virtual machines in the order.

Abstract: A storage unit stores information indicating a backup history of data associated with each of a plurality of virtual machines operating on one or more information processing apparatuses. An operation unit determines an order of migrating each of the plurality of virtual machines to one or more other information processing apparatuses, based on the information indicating the backup history. The operation unit controls the information processing apparatus so as to migrate each of the virtual machines in the order.

Abstract: An information processing method in embodiments of this invention includes: detecting a failure sign of a first physical disk in a system having plural physical disks, each of which stores one or plural virtual disks included in a virtual machine that is executed on a physical machine; identifying one or plural certain virtual disks stored in the first physical disk; and moving at least one of the identified one or plural certain virtual disks to a second physical disk that is a physical disk other than the first physical disk and has a capability to store a virtual disk to be moved to the second physical disk, based on a dynamic or static characteristic of the one or plural certain virtual disks or a dynamic or static characteristic of a physical disk other than the first physical disk.

Abstract: An optical semiconductor device comprises: a semiconductor light emitting element including semiconductor layers, including an active layer having a quantum well structure and epitaxially grown on a semiconductor substrate; and a submount on which the semiconductor light emitting element is mounted. Strain in the active layer after mounting the semiconductor light emitting element on the submount is larger than strain in the active layer after epitaxial growth of the active layer. The strain in the active layer during the epitaxial growth results in the surface of the semiconductor layers being a mirror surface. The strain in the active layer after the semiconductor light emitting element is mounted on the submount would not result in a mirror surface if present in the active layer at the epitaxial growth.

Abstract: A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.

Abstract: A method for drying a honeycomb formed body using microwaves is provided. The method can reduce the difference in the drying speed inside the honeycomb formed bodies during the drying process and can dry the honeycomb formed bodies without cell deformation. The method comprises placing the honeycomb formed body in a drying furnace with the cell axis in the vertical direction and irradiating the honeycomb with microwaves at a frequency of 300–30,000 MHz. The difference of the water content in the vertical direction of the honeycomb formed body 1 is maintained at 0.3% per mm or less during microwave irradiation.

Abstract: A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content) guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content) guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type-GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.

Abstract: An optical semiconductor module includes at least one semiconductor chip including at least one laser diode, a sub-mount or a heat sink, on which the at least one semiconductor chip is mounted, and a bonding wire supplying an operating current to the semiconductor chip. The material, diameter, and shape of the bonding wire are selected so that the bonding wire fuses itself when an overcurrent exceeding the operating current of the laser diode is applied.

Abstract: A method for drying a honeycomb formed body using microwaves is provided. The method can reduce the difference in the drying speed inside the honeycomb formed bodies during the drying process and can dry the honeycomb formed bodies without cell deformation. The method comprises placing the honeycomb formed body in a drying furnace with the cell axis in the vertical direction and irradiating the honeycomb with microwaves at a frequency of 300-30,000 MHz. The difference of the water content in the vertical direction of the honeycomb formed body 1 is maintained at 0.3% per mm or less during microwave irradiation.

Abstract: A semiconductor laser array device for outputting a higher power includes: a plurality of semiconductor laser chips, arranged in a predetermined pitch; a submount for mounting each semiconductor laser chip; and a heat sink for dissipating heat from the semiconductor laser chip through the submount; wherein a distance S between the centers of the chips and a thickness T of the submount satisfy the following inequality: 2×T?S?10×T, whereby improving efficiency of heat dissipation with a good process yield.