Patents by Inventor Naruhiro Hoshino
Naruhiro Hoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240150934Abstract: A polysilicon rod has a diameter of 120 mm or more, the polysilicon rod having a lowest resistivity of 3300 ?cm or more and an RRG of 100% or less. A polysilicon rod has a diameter of 140 mm or more, the polysilicon rod having a lowest resistivity of 3300 ?cm or more and an RRG of 150% or less.Type: ApplicationFiled: November 3, 2023Publication date: May 9, 2024Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Atsushi YOSHIDA, Naruhiro HOSHINO, Masahiko ISHIDA, Takeshi AOYAMA, Shigetoshi YAMAGISHI, Yoshio KANEKO
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Publication number: 20240025754Abstract: A polysilicon rod wherein in an area whose distance from a center of a cross section of the polysilicon rod is within ? of a radius and that excludes a seed core, average grain boundary characteristics have following features: a coincidence grain boundary ratio exceeds 20%, a grain boundary length exceeds 550 mm/mm2, and a random grain boundary length does not exceed 800 mm/mm2.Type: ApplicationFiled: October 2, 2023Publication date: January 25, 2024Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Atsushi YOSHIDA, Naruhiro HOSHINO, Masahiko ISHIDA, Takeshi AOYAMA
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Publication number: 20230339764Abstract: The present invention is related to a polycrystalline silicon rod manufactured with a Siemens method. The polycrystalline silicon rod having a length of 1 m or more in a longitudinal direction. An absolute value of a difference between compressive stress and tensile stress in residual stress in the longitudinal direction on a circumferential surface of the polycrystalline silicon rod is 22 MPa or less.Type: ApplicationFiled: April 20, 2023Publication date: October 26, 2023Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Tetsuro OKADA, Naruhiro HOSHINO, Masahiko ISHIDA
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Publication number: 20230236165Abstract: A quality evaluation method has a step of producing a silicon for evaluation in which a single crystal silicon is grown to extend radially from a core wire 9 while polycrystalline silicon is grown in a reactor 20; and a step of performing an evaluation using the single crystal silicon.Type: ApplicationFiled: December 23, 2022Publication date: July 27, 2023Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro HOSHINO, Shigetoshi YAMAGISHI, Atsushi YOSHIDA, Masahiko ISHIDA
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Patent number: 11673809Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.Type: GrantFiled: June 11, 2021Date of Patent: June 13, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11639293Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.Type: GrantFiled: June 11, 2021Date of Patent: May 2, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11565939Abstract: In the silicon core wire according to a first aspect of the present invention, a male thread part formed at one end of a first thin silicon rod and a female thread part formed at one end of a second thin silicon rod may be screwed together and fastened. In the silicon core wire according to a second aspect of the present invention, a thread part formed at one end of a first thin silicon rod and a thread part formed at one end of a second thin silicon rod may be screwed together and fastened via an adapter with thread parts formed at both ends.Type: GrantFiled: April 8, 2020Date of Patent: January 31, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naruhiro Hoshino, Tetsuro Okada, Masahiko Ishida
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Publication number: 20230001461Abstract: A cleaning system comprise: a first pipe 20 connected to a reactor 10 used for producing polysilicon by using chlorosilane as a raw material; a heat exchanger 30 connected to the first pipe 20; a second pipe 60 provided between the heat exchanger 30 and the first pipe 20; and a driving unit 50 provided at the first pipe 20 or the second pipe 60. A cleaning liquid circulates through the first pipe 20, the heat exchanger 30 and the second pipe 60 by the driving unit 50.Type: ApplicationFiled: June 27, 2022Publication date: January 5, 2023Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Atsushi YOSHIDA, Naruhiro HOSHINO, Masahiko ISHIDA
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Publication number: 20230002238Abstract: An apparatus for manufacturing a polysilicon rod comprising: a core wire 1 on which polysilicon is deposited; a core wire electrode 60 provided to penetrate a bottom plate 80; an adjustment member 10 provided between the silicon core wire 1 and the core wire electrode 60, and movable with respect to the bottom plate 80; and a cooling part capable of cooling the adjustment member 10.Type: ApplicationFiled: June 28, 2022Publication date: January 5, 2023Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro HOSHINO, Tetsuro OKADA, Masahiko ISHIDA
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Patent number: 11519069Abstract: A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be non-conductive with respect to a screwing part formed in the metal electrode. A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrode adapter may be non-conductive with respect to the fixing mechanism part.Type: GrantFiled: July 22, 2020Date of Patent: December 6, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11505862Abstract: A method for preventing contamination of a base plate having a step of, after producing polycrystalline silicon in a reactor having the base plate and a lid covering the base plate, removing the lid from the base plate; and a step of isolating space including the base plate by an isolation device.Type: GrantFiled: March 1, 2021Date of Patent: November 22, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11345603Abstract: In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.Type: GrantFiled: December 17, 2019Date of Patent: May 31, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naruhiro Hoshino, Tetsuro Okada, Masahiko Ishida
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Patent number: 11326257Abstract: An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.Type: GrantFiled: February 19, 2020Date of Patent: May 10, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naruhiro Hoshino, Tetsuro Okada, Masahiko Ishida
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Patent number: 11242620Abstract: To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm).Type: GrantFiled: July 3, 2018Date of Patent: February 8, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shuichi Miyao, Naruhiro Hoshino, Tetsuro Okada, Shigeyoshi Netsu, Masahiko Ishida
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Publication number: 20220033267Abstract: Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.Type: ApplicationFiled: October 15, 2021Publication date: February 3, 2022Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro Hoshino, Shigeyoshi Netsu, Tetsuro Okada, Masahiko Ishida
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Publication number: 20220002164Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.Type: ApplicationFiled: June 11, 2021Publication date: January 6, 2022Applicant: Shin-Etsu Chemical Co.. Ltd.Inventors: Tetsuro OKADA, Naruhiro HOSHiNO, Masahiko ISHIDA
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Publication number: 20210395097Abstract: A polysilicon rod wherein in an area whose distance from a center of a cross section of the polysilicon rod is within ? of a radius and that excludes a seed core, average grain boundary characteristics have following features: a coincidence grain boundary ratio exceeds 20%, a grain boundary length exceeds 550 mm/mm2, and a random grain boundary length does not exceed 800 mm/mm2.Type: ApplicationFiled: June 21, 2021Publication date: December 23, 2021Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Atsushi YOSHIDA, Naruhiro HOSHINO, Masahiko ISHIDA, Takeshi AOYAMA
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Publication number: 20210285099Abstract: A method for preventing contamination of a base plate having a step of, after producing polycrystalline silicon in a reactor having the base plate and a lid covering the base plate, removing the lid from the base plate; and a step of isolating space including the base plate by an isolation device.Type: ApplicationFiled: March 1, 2021Publication date: September 16, 2021Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Tetsuro OKADA, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 10914021Abstract: The present invention provides polycrystalline silicon suitably used as a raw material for producing single crystal silicon. The polycrystalline silicon rod of the present invention is a polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 10 ?m is not observed.Type: GrantFiled: October 16, 2018Date of Patent: February 9, 2021Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shuichi Miyao, Masahiko Ishida, Naruhiro Hoshino, Shigeyoshi Netsu
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Publication number: 20210025077Abstract: A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be non-conductive with respect to a screwing part formed in the metal electrode. A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrode adapter may be non-conductive with respect to the fixing mechanism part.Type: ApplicationFiled: July 22, 2020Publication date: January 28, 2021Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Testuro Okada, Naruhiro Hoshino, Masahiko Ishida