Abstract: A polysilicon rod has a diameter of 120 mm or more, the polysilicon rod having a lowest resistivity of 3300 ?cm or more and an RRG of 100% or less. A polysilicon rod has a diameter of 140 mm or more, the polysilicon rod having a lowest resistivity of 3300 ?cm or more and an RRG of 150% or less.

Abstract: A semiconductor device includes a plurality of semiconductor chips disposed in a vertical form through a spacer, in which a shield layer having a thickness such that an electromagnetic field radiation generated from a generation source of the semiconductor chip can sufficiently be absorbed is disposed between the semiconductor chips.

Abstract: A semiconductor device includes a plurality of semiconductor chips disposed in a vertical form through a spacer, in which a shield layer having a thickness such that an electromagnetic field radiation generated from a generation source of the semiconductor chip can sufficiently be absorbed is disposed between the semiconductor chips.

Abstract: An electronic apparatus includes: a first integrated circuit including an internal component section capable of being adjusted with adjustment data, a nonvolatile memory in which beforehand acquired adjustment data of a result of adjustment carried out in advance for the internal component section are stored, and an interface section having a data transfer function of transferring the beforehand acquired adjustment data read out from the nonvolatile memory to the outside and a data storage function of storing actual use adjustment data sent thereto from the outside and supplying the stored actual use adjustment data to the internal component section; and a second integrated circuit including a signal processor, to which the interface section of the first integrated circuit is connected.

Abstract: An electronic apparatus includes: a first integrated circuit including an internal component section, a nonvolatile memory, and an interface section; a test signal generation section configured to generate a test signal to be supplied to the first integrated circuit; a second integrated circuit including a processing section configured to process an output signal of the first integrated circuit, a signal processor to which the interface section of the first integrated circuit is connected and a detection section configured to detect decision information for deciding a result of the process of the test signal carried out by the processing section; and a control section configured to supply the test signal from the test signal generation section in place of the input signal to the first integrated circuit and issuing an instruction to the signal processor of the second integrated circuit to produce actual use adjustment data.

Abstract: An electronic apparatus includes: a first integrated circuit including an internal component section capable of being adjusted with adjustment data, a nonvolatile memory in which beforehand acquired adjustment data of a result of adjustment carried out in advance for the internal component section are stored, and an interface section having a data transfer function of transferring the beforehand acquired adjustment data read out from the nonvolatile memory to the outside and a data storage function of storing actual use adjustment data sent thereto from the outside and supplying the stored actual use adjustment data to the internal component section; and a second integrated circuit including a signal processor, to which the interface section of the first integrated circuit is connected.