Abstract: A method of manufacturing a thermoelectric material including: providing a half-Heusler compound of MgCuSn nanoparticles, obtaining a powder by mechanical alloying by using Mg chips, Si fine powder, Sn fine powder and Sb powder, the half-Heusler compound of MgCuSn nanoparticles and cyclohexane solution,wherein the weight percent V, of the cyclohexane solution is comprised between 0.5 wt % and 4.0 wt % and wherein the volume percent VHH of the Half-Heusler compound of MgCuSn nanoparticles satisfies: 1.4 vol %<VHH<2.0 vol %.

Abstract: Disclosed is a method for forecasting the energy consumption of a building, taking into account the heat exchanges from received solar radiation and/or heat convection and/or conduction between the building and the outside environment based on a physical model. The method includes a learning step to deduce the value of the parameters of the physical model based on previous measurements performed on the building.

Abstract: This thermoelectric material manufacturing method includes the steps of: preparing a powder from an at least binary thermoelectric alloy (AxB1-x) intended to be used as a matrix; mixing the powder with nanoparticles of pure metal (M) intended to form inclusions in the matrix; and submitting the mixture to a step of sintering at an adapted temperature resulting in the forming, in the matrix, of nanometric inclusions of composition MaAb and/or MaBb.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

Abstract: A method for making a thermoelectric microstructure includes: forming an insulating substrate; forming, on the substrate, a first assembly of conductor or semiconductor elements extending in parallel and in a first direction from first to second connection areas, and having a first Seebeck coefficient; forming, on the substrate, a second assembly of conductor or semiconductor elements electrically insulated from the first assembly and extending in parallel and in a second direction other than the first one, from the first to second connection areas, and having a second Seebeck coefficient other than the first one; providing, in the first and second connection areas, electric connection elements, each of which electrically connects at least one element of first and second assemblies; two conductor or semiconductor elements of a single assembly are separated in a predetermined direction by a predetermined average distance in the connection areas.

Abstract: Device (30) for measuring or evaluating a characteristic of a heat flux (?) exchanged between a first medium and a second medium, the device comprising a first thermoelectric means (31) and a second thermoelectric means (32), the first and second thermoelectric means being electrically connected in series and thermally connected in series, the first thermoelectric means being of a first nature (n-type) and the second thermoelectric means being of a second nature (p-type), the first and second natures being such that the first thermoelectric means and the second thermoelectric means polarize with opposite polarities under the effect of a heat flux having a given direction and a given sign.

Abstract: A method for making a thermoelectric microstructure includes: forming an insulating substrate; forming, on the substrate, a first assembly of conductor or semiconductor elements extending in parallel and in a first direction from first to second connection areas, and having a first Seebeck coefficient; forming, on the substrate, a second assembly of conductor or semiconductor elements electrically insulated from the first assembly and extending in parallel and in a second direction other than the first one, from the first to second connection areas, and having a second Seebeck coefficient other than the first one; providing, in the first and second connection areas, electric connection elements, each of which electrically connects at least one element of first and second assemblies; two conductor or semiconductor elements of a single assembly are separated in a predetermined direction by a predetermined average distance in the connection areas.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.