Abstract: A lateral semiconductor device (20) such as LDMOS, a LIGBT, a lateral diode, a lateral GTO, a lateral JFET or a lateral BJT, comprising a drift region (12) having a first surface (22) and a first conductivity type, first and second conductive (4, 8) extending into the drift region from the first surface. The lateral semiconductor device further comprises an additional region (24) or several additional regions, having a second conductivity type, between the first and second semiconductor regions (4, 8), the additional region extending into the drift region from the first surface (22), wherein the additional region forms a junction dividing the electric field between the first and second semiconductor regions when a current path is established between the first and second semiconductor regions. This allows the doping concentration of the drift region to be increased, thereby lowering the on-resistance of the device.

Abstract: A lateral semiconductor device (20) such as LDMOS, a UIGBT, a lateral diode, a lateral GTO, a lateral JFRT or a lateral BJT, comprising a drift region (12) having a first surface (22) and a first conductivity type, first and second conductive regions (4, 8) extending into the drift region from the first surface. The lateral semiconductor device further comprises an additional region (24) or several additional regions, having a second conductivity type, between the first and second semiconductor regions (4, 8), the additional region extending into the drift region from the first surface (22), wherein the additional region forms a junction dividing the electric field between the first and second semiconductor regions when a current path is established between the first and second semiconductor regions. This allows the doping concentration of the drift region to be increased, thereby lowering the on-resistance of the device.

Abstract: The invention concerns a Schottky-diode semiconductor device, comprising a substrate consisting of first (2) and second (3) semiconductor layers having the same type of conduction tiered up in said substrate, the second layer (3) being more highly doped than the first (2), said substrate having first (4) and second (5) main surfaces in contact with first (8) and second (6) electrodes, a Schottky barrier being formed between the first electrode (8) and said first layer. The invention is characterised in that the plurality of islands (9) having a type of conduction opposite to that of the first layer (2) are arranged in beds spaced apart in the thickness of said layer (2).