Abstract: A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract: A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract: A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.

Abstract: A process and system for depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.