Abstract: A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.

Abstract: A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.

Abstract: A method is provided for characterizing spectrometric properties (e.g., peak reflectivity, reflection curve width, and Bragg angle offset) of the K? emission line reflected narrowly off angle of the direct reflection of a bent crystal and in particular of a spherically bent quartz 200 crystal by analyzing the off-angle x-ray emission from a stronger emission line reflected at angles far from normal incidence. The bent quartz crystal can therefore accurately image argon K? x-rays at near-normal incidence (Bragg angle of approximately 81 degrees). The method is useful for in-situ calibration of instruments employing the crystal as a grating by first operating the crystal as a high throughput focusing monochromator on the Rowland circle at angles far from normal incidence (Bragg angle approximately 68 degrees) to make a reflection curve with the He-like x-rays such as the He-? emission line observed from a laser-excited plasma.