Patents by Inventor Nathan R. Franklin

Nathan R. Franklin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7498655
    Abstract: Apparatuses, a method, and a system for a non-volatile, probe-based memory device are disclosed herein. In various embodiments, probe-based memory may be one-time programmable or rewritable nonvolatile probe-based memory.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: March 3, 2009
    Assignee: Intel Corporation
    Inventors: Kyu S. Min, Nathan R. Franklin
  • Publication number: 20080089108
    Abstract: In one embodiment, the present invention includes an apparatus having a conductive storage medium to store information in the form of electrostatic charge. The conductive storage medium can be disposed in a non-conductive layer that is formed over a charge blocking layer, which in turn may be disposed over an electrode layer. In one embodiment, a barrier layer may be disposed over the non-conductive layer. Other embodiments are described and claimed.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 17, 2008
    Inventors: Kyu Min, Qing Ma, Nathan R. Franklin
  • Publication number: 20080078982
    Abstract: An apparatus comprising a substrate, an electrode coupled to the substrate, a modifiable layer coupled to the electrode, and a current focusing layer coupled to the modifiable layer. The current focusing layer comprises a conductive region and an insulating region. A method comprising forming a modifiable layer on an electrode and forming a current focusing layer on the modifiable layer.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 3, 2008
    Inventors: Kyu S. Min, Nathan R. Franklin
  • Patent number: 7183228
    Abstract: Patterned growth of arrays of SWNTs is achieved at the full-wafer scale. According to an example embodiment of the present invention, the chemistry of CH4 CVD has been discovered to be sensitive to the concentration of H2, leading to three regimes of growth conditions. The three regimes are identified for particular growth conditions and a regime that facilitates carbon nanotube growth while inhibiting pyrolysis is identified and used during CVD growth of the nanotubes. This approach is also useful for CVD synthesis of other nanomaterials. In this manner, patterned growth of carbon nanotubes is facilitated while inhibiting undesirable conditions, making nanotube orientation control and device integration possible on a large scale.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: February 27, 2007
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Hongjie Dai, Nathan R. Franklin