Abstract: A method for forming an aperture pattern in a substrate, the substrate including a film disposed thereon and a patterned mask layer disposed on the film, comprises 1) exposing the substrate to a vapor of a passivation molecule in a non-plasma condition for a period to form a surface protective layer on the patterned mask layer, 2) exposing the substrate to a plasma activated etch gas and plasma dry etching the substrate to form apertures over the patterned mask layer in the film with the plasma activated etch gas, and 3) repeating step 1) and 2) until a desired aperture pattern is formed in the film, wherein the surface protective layer is also formed on the sidewalls of the apertures formed in the film, wherein the passivation molecule has a boiling point equal to or larger than 20° C.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2: (R1)C?N ??[Formula 1] wherein in Formula 1, R1 is a C2 to C3 linear or branched perfluoroalkyl group, (R2)(R3)C?NH ??[Formula 2] wherein in Formula 2, each of R2 and R3 is independently a C1 to C2 linear perfluoroalkyl group.

Abstract: This disclosure describes an improved etch selectivity of a-C mask during HAR etch processes by using a cyclic etch process. The process has two principle steps: 1) A partial etch using a polymerizing etching recipe with lower O2 and extra polymer generation where a-C mask selectivity to dielectric (e.g. for SiO2 or ONON layers) is high; and 2) A polymer cleaning step using Kr sputter, Xe sputter, NF3, SF6, IF7, IF5, CF4, or other F based etching process, with or without bias, to etch the polymer. The polymer cleaning step may include addition of O containing molecules such as O2, CO, CO2, NO, NO2, N2O, SO2, and/or COS. These steps are repeated between a partial etch process (polymer creating) and polymer cleaning step (cycle etching).

Abstract: A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x?0, y?1, z?0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Methods for purification of a fluorocarbon or hydrofluorocarbon containing at least one undesired halocarbon impurities comprise flowing the fluorocarbon or hydrofluorocarbon through at least one adsorbent beds to selectively adsorb the at least one undesired halocarbon impurities through physical adsorption and/or chemical adsorption, wherein the at least one adsorbent beds contain a metal oxide supported on an adsorbent in an inert atmosphere.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising: sequentially or simultaneously exposing the substrate to a vapor of an etchant including a hydrofluorocarbon or fluorocarbon compound and an additive compound, the substrate having a film disposed thereon and a pattered mask layer disposed on the film; activating a plasma to produce an activated hydrofluorocarbon or fluorocarbon compound and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compound and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

Abstract: A method for storage and supply of a F3NO-free FNO-containing gas comprises the steps of storing the F3NO-free FNO-containing gas in a NiP coated steel cylinder with a polished inner surface, releasing the F3NO-free FNO-containing gas from the cylinder to a manifold assembly by activating a cylinder valve in fluid communication with the cylinder and the manifold assembly, de-pressurizing the F3NO-free FNO-containing gas by activating a pressure regulator in the manifold assembly so as to divide the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator, and feeding the de-pressurized F3NO-free FNO-containing gas to a target reactor downstream of the second pressure zone.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers f using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N?C—R; (N@C—)—(R)—(—C?N); Rx[-C?N(Rz)]y; and R(3-a)-N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Disclosed are systems and methods for supplying a F3NO-free FNO-containing gas and systems and methods for etching using the F3NO-free FNO-containing gas. The system comprises a NiP coated steel cylinder with a polished inner surface to store the F3NO-free FNO-containing gas, a cylinder valve to release the F3NO-free FNO-containing gas from the cylinder, a manifold assembly, including a pressure regulator and line components to deliver the F3NO-free FNO-containing gas to a target reactor. The pressure regulator de-pressurizes the F3NO-free FNO-containing gas in the manifold assembly thereby dividing the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator. A gaseous composition comprises F3NO-free FNO gas containing less than approximately 1% F3NO impurity by volume and an inert gas being capable of suppressing the concentration of F3NO impurity in the F3NO-free FNO gas.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.