Abstract: A novel metallized film capacitor is contemplated. The capacitor includes a first film and a second film. Each of the first film and second film have a metallized layer added. Each of the metallized layers includes alternating metallized sections and margin sections. The outermost sections on one film are metallized sections, while the outermost sections on the other film are margin sections. This pattern and proper sizing of the sections creates overlap regions where a metallized section from one film overlaps a metallized section from the other film. These overlap regions create sub-capacitors that give the capacitor low inductance while allowing for high current and high voltage.