Abstract: Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

Abstract: Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.

Abstract: Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.

Abstract: UV curable compositions and methods for depositing one or more metal or metal alloy films on substrates are disclosed. The UV curable compositions contain a catalyst, one or more carrier particles, one or more UV curing agents, and one or more water-soluble or water-dispersible organic compounds. Metal or metal alloys may be deposited on the substrates by electroless or electrolytic deposition.

Abstract: Disclosed are composites having very low coefficients of thermal expansion and methods of preparing the composites. Also disclosed are composites having negative coefficients of thermal expansion. Applications of the composites to a wide variety of uses, such as electronic and optoelectronic devices are also disclosed.

Abstract: A composition is provided which includes at least one silyl-terminated polymer, at least one polymer with anhydride functionalities, acid functionalities or combinations thereof, and one or more catalysts.

Abstract: Disclosed are methods of forming an electronic device. The methods involve (a) providing a substrate and a component to be bonded to the substrate, wherein the component is chosen from an electronic component, an optical component, a device lid, and a combination thereof; (b) applying solder paste to the substrate and/or the component, wherein the solder paste includes a carrier vehicle and a metal portion with metal particles; and (c) bringing the substrate and the component into contact with each other. The solder paste has a solidus temperature lower than the solidus temperature that would result after melting of the solder paste and re-solidification of the melt. Also provided are electronic devices which can be formed by the inventive methods. Particular applicability can be found in the electronics industry in the formation of hermetic electronic device packages, for example, hermetic optoelectronic device packages, formed from semiconductor wafers.

Abstract: Disclosed are methods of forming solder areas on electronic components. The methods involve: (a) providing a substrate having one or more contact pads; and (b) applying a solder paste over the contact pads. The solder paste includes a carrier vehicle and a metal component having metal particles. The solder paste has a solidus temperature lower than the solidus temperature that would result after melting of the solder paste and resolidification of the melt. Also provided are electronic components which can be formed by the inventive methods. Particular applicability can be found in the semiconductor industry in the formation of interconnect bumps on a semiconductor component, for example, for bonding an integrated circuit to a module circuit or printed wiring board using a bump bonding process.

Abstract: Compositions and methods for depositing one or more metal or metal alloy films on substrates. The compositions contain a catalyst, one or more carrier particles and one or more water-soluble or water-dispersible organic compounds. Metal or metal alloys may be deposited on the substrates by electroless or electrolytic deposition.

Abstract: A chemical vapor deposited, ? phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.