Patents by Inventor Nathaniel Mark Williams

Nathaniel Mark Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Smoothing method for semiconductor material and wafers produced by same
    Patent number: 9070654
    Abstract: A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: June 30, 2015
    Assignee: Cree, Inc.
    Inventors: Davis Andrew McClure, Nathaniel Mark Williams
  • SMOOTHING METHOD FOR SEMICONDUCTOR MATERIAL AND WAFERS PRODUCED BY SAME
    Publication number: 20130234162
    Abstract: A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.
    Type: Application
    Filed: April 23, 2013
    Publication date: September 12, 2013
    Applicant: Cree, Inc.
    Inventors: Davis Andrew McClure, Nathaniel Mark Williams
  • Smoothing method for semiconductor material and wafers produced by same
    Patent number: 8445386
    Abstract: A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.
    Type: Grant
    Filed: May 27, 2010
    Date of Patent: May 21, 2013
    Assignee: Cree, Inc.
    Inventors: Davis Andrew McClure, Nathaniel Mark Williams
  • Method for making group III nitride articles
    Patent number: 8435879
    Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
    Type: Grant
    Filed: November 30, 2006
    Date of Patent: May 7, 2013
    Assignee: Kyma Technologies, Inc.
    Inventors: Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, Nathaniel Mark Williams, Xueping Xu
  • SMOOTHING METHOD FOR SEMICONDUCTOR MATERIAL AND WAFERS PRODUCED BY SAME
    Publication number: 20110291104
    Abstract: A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.
    Type: Application
    Filed: May 27, 2010
    Publication date: December 1, 2011
    Applicant: CREE, INC.
    Inventors: Davis Andrew McClure, Nathaniel Mark Williams
  • Group III Nitride Articles and Methods for Making Same
    Publication number: 20100044718
    Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
    Type: Application
    Filed: November 30, 2006
    Publication date: February 25, 2010
    Inventors: Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, Nathaniel Mark Williams, Xueping Xu