Patents by Inventor Nathaniel R. Quick
Nathaniel R. Quick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170285351Abstract: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.Type: ApplicationFiled: November 11, 2015Publication date: October 5, 2017Inventors: Islam A. Salama, Nathaniel R. Quick, Aravinda Kar
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Publication number: 20170131556Abstract: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.Type: ApplicationFiled: November 11, 2015Publication date: May 11, 2017Inventors: Islam A. Salama, Nathaniel R. Quick, Aravinda Kar
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Patent number: 9620667Abstract: A method is disclosed for doping a semiconductor material comprising the steps of providing a semiconductor material having a first and a second surface. A dopant precursor is applied on the first surface of the semiconductor material. A thermal energy beam is directed onto the second surface of the semiconductor material to pass through the semiconductor material and impinge upon the dopant precursor to dope the semiconductor material thereby.Type: GrantFiled: November 18, 2015Date of Patent: April 11, 2017Assignee: AppliCote Associates LLCInventors: Nathaniel R Quick, Michael C Murray
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Patent number: 9601641Abstract: A method and apparatus is disclosed for doping a semiconductor substrate with a dopant concentration greater than 1020 atoms per cubic centimeter. The method is suitable for producing an improved doped wide bandgap wafer for power electronic devices, photo conductive semiconductor switch, or a semiconductor catalyst.Type: GrantFiled: December 8, 2014Date of Patent: March 21, 2017Assignee: AppliCote Associates, LLCInventors: Nathaniel R Quick, Michael C Murray
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Patent number: 9343310Abstract: An apparatus and a method are disclosed for forming electrical conductors and/or semiconductors on a glass substrate. The electrical conductors and/or semiconductors are formed by applying a conducting material or a semiconductor material to a surface of the glass substrate and irradiating the interface with a focused laser beam transmitted through the glass. An electrical conductor may be formed on a glass substrate or a semiconductor substrate to provide an electrical antenna for radio frequency communication.Type: GrantFiled: June 26, 2013Date of Patent: May 17, 2016Inventors: Nathaniel R Quick, Michael C Murray
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Patent number: 9211609Abstract: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.Type: GrantFiled: December 28, 2005Date of Patent: December 15, 2015Assignee: Intel CorporationInventors: Islam A. Salama, Nathaniel R. Quick, Aravinda Kar
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Patent number: 9064798Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.Type: GrantFiled: May 27, 2011Date of Patent: June 23, 2015Assignee: University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar, Islam A. Salama
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Patent number: 9059079Abstract: A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.Type: GrantFiled: September 25, 2013Date of Patent: June 16, 2015Assignees: UT-Battelle, LLC, APPLICOTE, LLCInventors: Nathaniel R Quick, Pooran C Joshi, Chad Edward Duty, Gerald Earle Jellison, Jr., Joseph Attilio Angelini
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Patent number: 8912549Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.Type: GrantFiled: May 3, 2011Date of Patent: December 16, 2014Assignee: University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar, Islam A. Salama
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Patent number: 8828769Abstract: A solid-state energy conversion device and method of making is disclosed wherein the solid-state energy conversion device is formed through the conversion of an insulating material. In one embodiment, the solid-state energy conversion device operates as a photovoltaic device to provide an output of electrical energy upon an input of electromagnetic radiation. In another embodiment, the solid-state energy conversion device operates as a light emitting device to provide an output of electromagnetic radiation upon an input of electrical energy. In one example, the photovoltaic device is combined with a solar liquid heater for heating a liquid. In another example, the photovoltaic device is combined with a solar liquid heater for treating water.Type: GrantFiled: December 1, 2009Date of Patent: September 9, 2014Assignee: University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8772061Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.Type: GrantFiled: July 14, 2011Date of Patent: July 8, 2014Assignee: University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8722451Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.Type: GrantFiled: July 14, 2011Date of Patent: May 13, 2014Inventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8674373Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.Type: GrantFiled: February 10, 2012Date of Patent: March 18, 2014Inventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8617669Abstract: An apparatus and method is disclosed for synthesizing graphene comprising the steps of providing a substrate and focusing a laser beam in the presence of a carbon doping gas to induce photolytic decomposition of the gas to atomic carbon. The carbon is photolytically reacted with the substrate to grow graphene.Type: GrantFiled: December 7, 2010Date of Patent: December 31, 2013Inventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8617965Abstract: A method is disclosed for making a high crystalline quality layer in a surface region of a wide bandgap material substrate. The high crystalline quality layer is formed by directing a thermal energy beam onto the wide bandgap material in the presence of a doping gas for converting a layer of the wide bandgap material into the high crystalline quality layer. Various electrical, optical and electro-optical components may be formed within the high crystalline quality layer through a further conversion process. In an alternative embodiment, the high crystalline quality layer may be embedded within the wide bandgap material.Type: GrantFiled: April 25, 2006Date of Patent: December 31, 2013Inventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8393289Abstract: An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.Type: GrantFiled: August 29, 2008Date of Patent: March 12, 2013Assignee: University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar
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Publication number: 20120292640Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.Type: ApplicationFiled: February 10, 2012Publication date: November 22, 2012Inventors: Nathaniel R. Quick, Aravinda Kar
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Publication number: 20120064655Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.Type: ApplicationFiled: May 27, 2011Publication date: March 15, 2012Applicant: University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8114693Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.Type: GrantFiled: September 18, 2008Date of Patent: February 14, 2012Assignee: Partial Assignment University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar
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Patent number: 8080836Abstract: A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.Type: GrantFiled: July 9, 2007Date of Patent: December 20, 2011Assignee: University of Central FloridaInventors: Nathaniel R. Quick, Aravinda Kar, Islam A. Salama