Patents by Inventor NATIONAL SEMICONDUCTOR CORPORATION

NATIONAL SEMICONDUCTOR CORPORATION has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130214399
    Abstract: Methods and systems are described for enabling the efficient fabrication of small form factor power converters and also the small form factor power converter devices.
    Type: Application
    Filed: April 2, 2013
    Publication date: August 22, 2013
    Applicant: National Semiconductor Corporation
    Inventor: National Semiconductor Corporation
  • Publication number: 20130169262
    Abstract: A methodology for regulating power supplied to a powered component based on hardware performance, such as may be used in a system that includes the powered component and a switching regulator (EMU or energy management unit) configured to supply a regulated supply voltage to the powered component. Performance monitoring circuitry generates a performance monitoring signal corresponding to a detected performance level of selected digital operations of the powered component relative to a reference performance level. Switching control circuitry provides a switching control signal in response to the performance monitoring signal. In an example embodiments, the switching control circuitry for the switching regulator (switching transistor) is integrated into the powered component, and the detected performance level corresponds to a detected signal path delay associated with the digital operations of the powered component.
    Type: Application
    Filed: February 27, 2013
    Publication date: July 4, 2013
    Applicant: National Semiconductor Corporation
    Inventor: National Semiconductor Corporation
  • Publication number: 20130126970
    Abstract: A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (100, 102, 112, 114, 124, and 126) utilize empty wells (180, 182, 192, 194, 204, and 206) in achieving desired transistor characteristics. Other IGFETs (108, 110, 116, 118, 120, and 122) utilize filled wells (188, 190, 196, 198, 200, and 202) in achieving desired transistor characteristics.
    Type: Application
    Filed: November 6, 2012
    Publication date: May 23, 2013
    Applicant: NATIONAL SEMICONDUCTOR CORPORATION
    Inventor: NATIONAL SEMICONDUCTOR CORPORATION
  • Publication number: 20130122628
    Abstract: A micro-electromechanical systems (MEMS) relay includes a switch with a first contact region and a second contact region that are vertically separated from each other by a gap. The MEMS relay requires a small vertical movement to close the gap and therefore is mechanically robust. In addition, the MEMS relay has a small footprint and, therefore, can be formed on top of small integrated circuits.
    Type: Application
    Filed: January 11, 2013
    Publication date: May 16, 2013
    Applicant: NATIONAL SEMICONDUCTOR CORPORATION
    Inventor: National Semiconductor Corporation
  • Publication number: 20130121499
    Abstract: A system and method for processing close talking differential microphone array (CTDMA) signals in which incoming microphone signals are transformed from time domain signals to frequency domain signals having separable magnitude and phase information. Processing of the frequency domain signals is performed using the magnitude information, following which phase information is reintroduced using phase information of one of the original frequency domain signals. As a result, high pass filtering effects of conventional differential signal processing of CTDMA signals are substantially avoided.
    Type: Application
    Filed: January 4, 2013
    Publication date: May 16, 2013
    Applicant: NATIONAL SEMICONDUCTOR CORPORATION
    Inventor: NATIONAL SEMICONDUCTOR CORPORATION