Abstract: An average fault ratio is calculated from product characteristics of a product as a target of yield prediction, in order to predict yield accurately in the course of manufacturing the prediction target product. With respect to a reference product, whose wiring pattern is different from the prediction target product but manufactured by the same manufacturing process, a monthly electric fault density is calculated from actually measured data. Respective average fault ratios are obtained from product characteristics of the prediction target product and the reference product. A monthly electric fault density of the prediction target product is obtained by multiplying the monthly electric fault density of the reference product by the ratio of the average fault ratios. The yield is calculated by using the monthly electric fault density of the month in which a yield prediction target lot of the prediction target product was processed.

Abstract: A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

Abstract: A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe.

Abstract: An average fault ratio is calculated from product characteristics of a product as a target of yield prediction, in order to predict yield accurately in the course of manufacturing the prediction target product. With respect to a reference product, whose wiring pattern is different from the prediction target product but manufactured by the same manufacturing process, a monthly electric fault density is calculated from actually measured data. Respective average fault ratios are obtained from product characteristics of the prediction target product and the reference product. A monthly electric fault density of the prediction target product is obtained by multiplying the monthly electric fault density of the reference product by the ratio of the average fault ratios. The yield is calculated by using the monthly electric fault density of the month in which a yield prediction target lot of the prediction target product was processed.

Abstract: A plasma processing control system includes a plasma processing apparatus for generating plasma within a vacuum processing chamber and performing a processing operation over a sample accommodated within the vacuum processing chamber using radicals and ions within the plasma, a pre-measuring instrument which measures a shape of the sample before processing, a post-measuring instrument which measures a shape of the sample after the processing, a parameter changer provided with at least one optimum recipe model for calculating a target process parameter, and a model changer for modifying the optimum recipe model, thereby updating a recipe parameter for each etching.

Abstract: A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

Abstract: An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching steps which affects an underlying film making contact with the single film to be etched, generating different recipes other than the preset recipe to be applied to other etching steps of the plurality of etching steps, wherein at least one of the different recipes for the other etching steps is generated on the basis of processed results, and conducting etching of the single film according to the recipes generated.

Abstract: An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etching step, affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe, and which generates a recipe to be applied to the residual etching step on the basis of the results of processing. Etching processing is conducted according to the recipes generated by the recipe generating means.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: A plasma processing control system for a plasma processing apparatus having a plasma processor for performing a plasma processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during the processing operation, a unit for providing a processed-result estimation model which estimates a processed result on the basis of a monitored output from the sensor and a preset processed-result estimation equation, a unit for providing an optimum recipe calculation model which calculates corrections to the processing conditions so that the processed result becomes a target value on the basis of the estimated result of the processed-result estimation model, and a unit for causing the processing apparatus to process the sample under the optimum processing conditions in the next processing step on the basis of a recipe generated from the optimum recipe calculation model.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: An etching apparatus has a sensor for monitoring the etching state, an etching result estimation model for estimating an etching result from an output of the sensor and an etching result estimator, and an etching recipe calculation model for calculating a recipe based on the estimation result, in such a manner as to achieve a target etching result. In the etching method employed, when subjecting a semiconductor substrate prepared by using polysilicon to etching, calculating at least one of an oxygen gas flow rate and a pressure or both, which are included in the recipe, is calculated based on a recipe calculation model and the etching is performed using the thus-obtained parameter(s). The etching apparatus and the etching method enable desired pattern dimensions to be achieved, while suppressing variation in the final pattern dimensions.

Abstract: An etching system for subjecting a single film to be etched to etching comprised of a plurality of etching steps applying respective different recipes. The etching system comprises a recipe generating means which fixes the recipe to be applied to the final etching step affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe and which generates a recipe to be applied to the residual etching step on the basis of the results of processing, and etching processing is conducted according to the recipes generated by the recipe generating means.

Abstract: An inspection system comprises an inspection machine for inspecting a work which is processed in one of the manufacturing processes of a manufacturing line and an analysis system for outputting an inspection history list obtained by making calculations from the inspected result. The inspection history list shows a matrix of first information as the inspection processes in which the work is inspected or the manufacturing processes corresponding to the inspection processes in which the work is inspected and second information as to the works inspected by the inspection machine.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.