Patents by Inventor Nauman AFZAL

Nauman AFZAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9740229
    Abstract: A curvature-corrected bandgap reference comprising a first BJT device operating at a first current density that is substantially proportional to absolute temperature, the first BJT device having a first base-emitter voltage and a first base terminal and a second BJT device operating at a second current density that is substantially independent of temperature, the second BJT device having a second base-emitter voltage and a second base terminal. The first and second base terminals operate at a reference voltage. The reference voltage comprises a linear combination of the first and second base-emitter voltages and is thereby made substantially independent of temperature and curvature-corrected. The linear combination is provided by summing the first base-emitter voltage, a proportional to absolute temperature (PTAT) voltage proportional to a first current density, and a curvature-correction voltage proportional to a difference between the first and second base-emitter voltages.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: August 22, 2017
    Assignee: InvenSense, Inc.
    Inventor: Nauman Afzal
  • Publication number: 20150338872
    Abstract: A curvature-corrected bandgap reference comprising a first BJT device operating at a first current density that is substantially proportional to absolute temperature, the first BJT device having a first base-emitter voltage and a first base terminal and a second BJT device operating at a second current density that is substantially independent of temperature, the second BJT device having a second base-emitter voltage and a second base terminal. The first and second base terminals operate at a reference voltage. The reference voltage comprises a linear combination of the first and second base-emitter voltages and is thereby made substantially independent of temperature and curvature-corrected. The linear combination is provided by summing the first base-emitter voltage, a proportional to absolute temperature (PTAT) voltage proportional to a first current density, and a curvature-correction voltage proportional to a difference between the first and second base-emitter voltages.
    Type: Application
    Filed: August 3, 2015
    Publication date: November 26, 2015
    Inventor: Nauman AFZAL
  • Patent number: 9098098
    Abstract: A curvature-corrected bandgap reference is disclosed. The curvature-corrected bandgap reference comprises a Brokaw bandgap circuit. The Brokaw bandgap circuit includes an output node providing a reference voltage. The Brokaw bandgap circuit further comprising a first BJT device including a first base terminal coupled to the output node and a first emitter terminal. The first BJT device operates at a first current density that is substantially proportional to absolute temperature. The curvature-corrected bandgap reference also includes a second BJT device including a second base terminal coupled to the output node and a second emitter terminal. The second BJT device operates at a second current density that is substantially independent of temperature. Finally the curvature-corrected bandgap reference includes a correction voltage proportional to a voltage difference of the first and second emitter terminals, wherein the correction voltage substantially cancels a curvature of the reference voltage.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: August 4, 2015
    Assignee: INVENSENSE, INC.
    Inventors: Derek Shaeffer, Nauman Afzal
  • Publication number: 20140117966
    Abstract: A curvature-corrected bandgap reference is disclosed. The curvature-corrected bandgap reference comprises a Brokaw bandgap circuit. The Brokaw bandgap circuit includes an output node providing a reference voltage. The Brokaw bandgap circuit further comprising a first BJT device including a first base terminal coupled to the output node and a first emitter terminal. The first BJT device operates at a first current density that is substantially proportional to absolute temperature. The curvature-corrected bandgap reference also includes a second BJT device including a second base terminal coupled to the output node and a second emitter terminal. The second BJT device operates at a second current density that is substantially independent of temperature. Finally the curvature-corrected bandgap reference includes a correction voltage proportional to a voltage difference of the first and second emitter terminals, wherein the correction voltage substantially cancels a curvature of the reference voltage.
    Type: Application
    Filed: December 20, 2012
    Publication date: May 1, 2014
    Applicant: INVENSENSE, INC.
    Inventors: Derek SHAEFFER, Nauman AFZAL