Patents by Inventor Ndanka O. Mukuti
Ndanka O. Mukuti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11956883Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: GrantFiled: December 23, 2022Date of Patent: April 9, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Publication number: 20230131809Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: ApplicationFiled: December 23, 2022Publication date: April 27, 2023Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Patent number: 11570879Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: GrantFiled: August 19, 2020Date of Patent: January 31, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Publication number: 20210059037Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: ApplicationFiled: August 19, 2020Publication date: February 25, 2021Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Patent number: 10276353Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.Type: GrantFiled: April 29, 2016Date of Patent: April 30, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Kaushik Alayavalli, Xinhai Han, Praket P. Jha, Masaki Ogata, Zhijun Jiang, Allen Ko, Ndanka O. Mukuti, Thuy Britcher, Amit Kumar Bansal, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Bok Hoen Kim
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Publication number: 20160322200Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.Type: ApplicationFiled: April 29, 2016Publication date: November 3, 2016Inventors: Kaushik ALAYAVALLI, Xinhai HAN, Praket P. JHA, Masaki OGATA, Zhijun JIANG, Allen KO, Ndanka O. MUKUTI, Thuy BRITCHER, Amit Kumar BANSAL, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA-ALVAREZ, Bok Hoen KIM
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Patent number: 7589336Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other.Type: GrantFiled: March 15, 2007Date of Patent: September 15, 2009Assignee: Applied Materials, Inc.Inventors: Andrzei Kaszuba, Juan Carlos Rocha-Alvarez, Thomas Nowak, Sanjeev Baluja, Ndanka O. Mukuti
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Patent number: 7554103Abstract: A pump liner is used to direct a laminar flow of purge gas across a workpiece to remove contaminants or species outgassed or otherwise produced by the workpiece during processing. The pump liner can take the form of a ring having a plurality of injection ports, such as slits of a variety of shapes and/or sizes, opposite a plurality of receiving ports in order to provide the laminar flow. The flow of purge gas is sufficient to carry a contaminant or outgassed species from the processing chamber in order to prevent the collection of the contaminants on components of the chamber. The pump liner can be heated, via conduction and irradiation from a radiation source, for example, in order to prevent the condensation of species on the liner. The pump liner also can be anodized or otherwise processed in order to increase the emissivity of the liner.Type: GrantFiled: November 21, 2006Date of Patent: June 30, 2009Assignee: Applied Materials, Inc.Inventors: Juan Carlos Rocha-Alvarez, Thomas Nowak, Sanjeev Baluja, Andrzej Kaszuba, Ndanka O. Mukuti
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Publication number: 20070298362Abstract: A pump liner is used to direct a laminar flow of purge gas across a workpiece to remove contaminants or species outgassed or otherwise produced by the workpiece during processing. The pump liner can take the form of a ring having a plurality of injection ports, such as slits of a variety of shapes and/or sizes, opposite a plurality of receiving ports in order to provide the laminar flow. The flow of purge gas is sufficient to carry a contaminant or outgassed species from the processing chamber in order to prevent the collection of the contaminants on components of the chamber. The pump liner can be heated, via conduction and irradiation from a radiation source, for example, in order to prevent the condensation of species on the liner. The pump liner also can be anodized or otherwise processed in order to increase the emissivity of the liner.Type: ApplicationFiled: November 21, 2006Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventors: Juan Carlos Rocha-Alvarez, Thomas Nowak, Sanjeev Baluja, Andrzej Kaszuba, Ndanka O. Mukuti
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Publication number: 20070295012Abstract: A re-circulating cooling system can be used with a curing system in order to reduce the exhaust requirements for the system. Further, using a cooling fluid such as nitrogen reduces the production of ozone and the sealing requirements for the system. A simple heat exchanger can be used between return and supply reservoirs in order to remove heat added to the re-circulating fluid during circulation past the curing radiation source. The nitrogen can come from a nitrogen source, or from a membrane or other device operable to split feed gas into its molecular components to provide a source of gas rich in nitrogen. An ozone destruction unit can be used with such a cooling system to reduce the amount of ozone to acceptable levels, and to minimize consumption of the nitrogen. A catalyst can be used to deplete the ozone that does not get consumed during the reaction.Type: ApplicationFiled: November 3, 2006Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventors: Dustin W. Ho, Juan Carlos Rocha-Alvarez, Dale R. Du Bois, Scott A. Hendrickson, Sanjeev Baluja, Ndanka O. Mukuti
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Publication number: 20070298167Abstract: A re-circulating cooling system can be used with a curing system in order to reduce the exhaust requirements for the system. Further, using a cooling fluid such as nitrogen reduces the production of ozone and the sealing requirements for the system. A simple heat exchanger can be used between return and supply reservoirs in order to remove heat added to the re-circulating fluid during circulation past the curing radiation source. The nitrogen can come from a nitrogen source, or from a membrane or other device operable to split feed gas into its molecular components to provide a source of gas rich in nitrogen. An ozone destruction unit can be used with such a cooling system to reduce the amount of ozone to acceptable levels, and to minimize consumption of the nitrogen. A catalyst can be used to deplete the ozone that does not get consumed during the reaction.Type: ApplicationFiled: November 6, 2006Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventors: DUSTIN W. HO, Juan Carlos Rocha-Alvarez, Dale R. Du Bois, Scott A. Hendrickson, Sanjeev Baluja, Ndanka O. Mukuti
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Patent number: 7074298Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.Type: GrantFiled: May 17, 2002Date of Patent: July 11, 2006Assignee: Applied MaterialsInventors: Sudhir Gondhalekar, Tom K. Cho, Rolf Guenther, Shigeru Takehiro, Masayoshi Nohira, Tetsuya Ishikawa, Ndanka O. Mukuti
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Publication number: 20030213562Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. This allows higher source power plasma to be generated and facilitates gapfill for extremely small geometries. The dome design improves the uniformity of the plasma distribution over the substrate to be processed. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top.Type: ApplicationFiled: May 17, 2002Publication date: November 20, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Sudhir Gondhalekar, Tom K. Cho, Rolf Guenther, Shigeru Takehiro, Masayoshi Nohira, Tetsuya Ishikawa, Ndanka O. Mukuti