Abstract: A reservoir for one or more chemical reactants has means for heating the reactants and optional means for stirring the reactants. A pumped reactant feed line and a return line provide fluid communication between the reservoir and a 4-way valve system. The 4-way valve system is also in fluid communication with a reactor vessel and a source of inert gas for purging the system. In a first state, the 4-way valve provides fluid communication between the reservoir and the reactor. In a second state, the 4-way valve provides a continuous circulation path for the heated reactants from the reservoir, to the valve system, and back to the reservoir via the return line. In a third state, the 4-way valve provides a fluid pathway for purging the reactor with inert gas. In a fourth state, the 4-way valve provides a fluid pathway for purging the reservoir with inert gas.

Abstract: A reservoir for one or more chemical reactants has means for heating the reactants and optional means for stirring the reactants. A pumped reactant feed line and a return line provide fluid communication between the reservoir and a 4-way valve system. The 4-way valve system is also in fluid communication with a reactor vessel and a source of inert gas for purging the system. In a first state, the 4-way valve provides fluid communication between the reservoir and the reactor. In a second state, the 4-way valve provides a continuous circulation path for the heated reactants from the reservoir, to the valve system, and back to the reservoir via the return line. In a third state, the 4-way valve provides a fluid pathway for purging the reactor with inert gas. In a fourth state, the 4-way valve provides a fluid pathway for purging the reservoir with inert gas.

Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.

Abstract: Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Abstract: An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X)??(Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.

Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.

Abstract: A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO)3 wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen.

Abstract: Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Abstract: An organometallic precursor is provided. The precursor corresponds in structure to Formula (I): Cp(R)nM(CO)2(X), wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).