Patents by Inventor Neil Darragh

Neil Darragh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10141049
    Abstract: To make more efficient use of storage capacity, a non-volatile storage system will store system data on marginal word lines. In one embodiment, a marginal word line is a word line that is not suitable to store host data because it is not sufficiently reliable for properly programming and reading the host data.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: November 27, 2018
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Robert George Young, Neil Darragh
  • Patent number: 9589645
    Abstract: Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: March 7, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Gautam Dusija, Chris Avila, Jonathan Hsu, Neil Darragh, Bo Lei
  • Publication number: 20160180926
    Abstract: To make more efficient use of storage capacity, a non-volatile storage system will store system data on marginal word lines. In one embodiment, a marginal word line is a word line that is not suitable to store host data because it is not sufficiently reliable for properly programming and reading the host data.
    Type: Application
    Filed: December 19, 2014
    Publication date: June 23, 2016
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Robert George Young, Neil Darragh
  • Publication number: 20160099057
    Abstract: Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.
    Type: Application
    Filed: October 6, 2014
    Publication date: April 7, 2016
    Inventors: Gautam Dusija, Chris Avila, Jonathan Hsu, Neil Darragh, Bo Lei
  • Patent number: 7027251
    Abstract: A method and apparatus to control the amount by which thermal expansion causes a write head to extend toward a disk is provided. In one aspect, a single write operation uses two or more different write currents. A first write current is initially used, and is large enough to achieve desired magnetic flux at the disk. After the write current heats and expands the arm tip, and extends it toward the disk surface, the write current is reduced, to avoid or postpone the time at which thermal expansion might cause the tip to contact the disk, or cause other undesirable effects.
    Type: Grant
    Filed: January 6, 2003
    Date of Patent: April 11, 2006
    Assignee: Maxtor Corporation
    Inventors: Neil Darragh, Jerry Moline, Bruce Emo