Abstract: Condensable metal halide materials, such as but not limited to tungsten hexachloride and tungsten pentachloride can be used deposit films metal or metal containing films in a chemical vapor deposition (CVD) or atomic layer deposition process. Described herein are high purity tungsten hexachloride and tungsten pentachloride systems and methods to purify tungsten hexachloride and tungsten pentachloride raw materials. There is provided a purified tungsten hexachloride and tungsten pentachloride containing less than 10 ppm, preferably less than 5 ppm, more preferably less than 1 ppm, and most preferably less than 0.5 ppm of iron and/or molybdenum; and less than 10 ppm, preferably less than 5 ppm of all other trace metals combined including but not limited to aluminum, potassium and sodium.

Abstract: Lanthanide compounds for vapor deposition having ?50.0 ppm, ?30.0 ppm, or ?10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.

Abstract: Lanthanide compounds for vapor deposition having ?50.0 ppm, ?30.0 ppm, or ?10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.

Abstract: A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14?n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

Abstract: Lanthanide compounds for vapor deposition having ?50.0 ppm, ?30.0 ppm, or ?10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.

Abstract: Condensable metal halide materials, such as but not limited to tungsten hexachloride and tungsten pentachloride can be used deposit films metal or metal containing films in a chemical vapor deposition (CVD) or atomic layer deposition process. Described herein are high purity tungsten hexachloride and tungsten pentachloride systems and methods to purify tungsten hexachloride and tungsten pentachloride raw materials. There is provided a purified tungsten hexachloride and tungsten pentachloride containing less than 10 ppm, preferably less than 5 ppm, more preferably less than 1 ppm, and most preferably less than 0.5 ppm of iron and/or molybdenum; and less than 10 ppm, preferably less than 5 ppm of all other trace metals combined including but not limited to aluminum, potassium and sodium.

Abstract: Lanthanide compounds for vapor deposition having ?50.0 ppm, ?30.0 ppm, or ?10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.

Abstract: A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14?n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

Abstract: The present invention is directed to salt compositions and methods used to make them. Embodiments may include methods for preparing salt compositions that include aerosolizing a melted salt composition to form droplets, where the droplets form rounded particles. Embodiments may further include solid compositions, including rounded salt particles, where the particles are formed by aerosolizing a melted salt composition. The particles can have semisolid interiors with void spaces.

Abstract: The present invention is directed to salt compositions and methods used to make them. Embodiments may include methods for preparing salt compositions that include aerosolizing a melted salt composition to form droplets, where the droplets form rounded particles. Embodiments may further include solid compositions, including rounded salt particles, where the particles are formed by aerosolizing a melted salt composition. The particles can have semisolid interiors with void spaces.

Abstract: Catalytic methods for the production of saturated hydrocarbons with 2 to 5 carbon atoms per molecule by conversion of small hydrocarbon halides and/or hydrogenation of carbonaceous material are disclosed that result in high yield of saturated C2 to C5 hydrocarbons at reduced corrosion of the reactors and in good lifetime of the catalyst. The methods are performed in the presence of a Lewis acid comprising catalyst and in the absence of oxygen or oxygen containing compounds, whereby an upper limit of at most 50 parts per million mass of oxygen or oxygen containing compounds can be tolerated.

Abstract: Catalytic methods for the production of saturated hydrocarbons with 2 to 5 carbon atoms per molecule by conversion of small hydrocarbon halides and/or hydrogenation of carbonaceous material are disclosed that result in high yield of saturated C2 to C5 hydrocarbons at reduced corrosion of the reactors and in good lifetime of the catalyst. The methods are performed in the presence of a Lewis acid comprising catalyst and in the absence of oxygen or oxygen containing compounds, whereby an upper limit of at most 50 parts per million mass of oxygen or oxygen containing compounds can be tolerated.