Abstract: The present disclosure relates to a braking system and, more particularly, to a braking system for engaging a brake mechanism as a waiting brake for a load carrying vehicle. The braking system utilises an electrohydraulic brake control mechanism comprising at least one automatic retard control valve to engage the brake mechanism, which is activated by a dual function apparatus which also controls another operation of the vehicle.

Abstract: The present disclosure relates to a vehicle having a braking system and a method of engaging the braking system. The braking system engages a brake mechanism as a waiting brake. The vehicle has a dual function device which is configured such that when the dual function device is activated when the vehicle transmission system is in a drive mode, the transmission system is maintained in that drive mode, and when the dual function device is activated when the transmission system is in the neutral mode, the brake mechanism is engaged.

Abstract: A method of producing nitride nanoparticles comprises reacting at least one organometallic compound, for example an alkyl metal, with at least one source of nitrogen. The reaction may involve one or more liquid phase organometallic compounds, or may involve one or more liquid phase organometallic compounds dissolved in a solvent or solvent mixture. The reaction constituents may be heated to a desired reaction temperature (for example in the range 40° C. to 300° C.).

Abstract: A system and method are provided for enhancing the slope-holding capability of an earth-moving machine. The machine includes a plurality of ground-engaging elements and a first parking brake configured to brake a first subset of the plurality of ground-engaging elements. A second parking brake is mounted and is configured to brake a second subset of the plurality of ground-engaging elements. A brake controller is configured to sense engagement of the first parking brake and to engage the second parking brake when the first parking brake is engaged only if one or more machine state criteria are also met. In an embodiment, the one or more machine state criteria include zero machine speed, neutral transmission state, and a machine slope that exceeds a predetermined threshold slope.

Abstract: Rather than using separate sample rate offset and phase offset estimation algorithms for coarse timing synchronization and fine timing synchronization of a receiver timing, respectively, one phase error algorithm can be used for both the coarse and fine timing synchronization. In order to perform coarse timing synchronization the phase error indications sampled over a sampling period are used to form an error vector, and a Fourier transform can then be applied to the error vector. An analysis of the Fourier transform of the error vector can be used to determine a frequency component identifying an offset between the receiver frequency and the signal frequency. The frequency of the receiver timing can then be adjusted in accordance with the identified offset, thereby performing the coarse timing synchronization. Once the coarse timing synchronization has been applied, the same phase error algorithm may be used, without the Fourier transform, to implement the fine timing synchronization.

Abstract: Rather than using separate sample rate offset and phase offset estimation algorithms for coarse timing synchronisation and fine timing synchronisation of a receiver timing, respectively, one phase error algorithm can be used for both the coarse and fine timing synchronisation. In order to perform coarse timing synchronisation the phase error indications sampled over a sampling period are used to form an error vector, and a Fourier transform can then be applied to the error vector. An analysis of the Fourier transform of the error vector can be used to determine a frequency component identifying an offset between the receiver frequency and the signal frequency. The frequency of the receiver timing can then be adjusted in accordance with the identified offset, thereby performing the coarse timing synchronisation. Once the coarse timing synchronisation has been applied, the same phase error algorithm may be used, without the Fourier transform, to implement the fine timing synchronisation.

Abstract: A population of light-emissive nitride nanoparticles has a photoluminescence quantum yield of at least 10% and an emission spectrum having a full width at half maximum intensity (FWHM) of less than 100 nm. One suitable method of producing light-emissive nitride nanoparticles comprises a first stage of heating a reaction mixture consisting essentially of nanoparticle precursors in a solvent, the nanoparticle precursors including at least one metal-containing precursor and at least one first nitrogen-containing precursor, and maintaining the reaction mixture at a temperature to seed nanoparticle growth. It further comprises a second stage of adding at least one second nitrogen-containing precursor to the reaction mixture thereby to promote nanoparticle growth.

Abstract: A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles.

Abstract: A population of light-emissive nitride nanoparticles has a photoluminescence quantum yield of at least 10% and an emission spectrum having a full width at half maximum intensity (FWHM) of less than 100 nm. One suitable method of producing light-emissive nitride nanoparticles comprises a first stage of heating a reaction mixture consisting essentially of nanoparticle precursors in a solvent, the nanoparticle precursors including at least one metal-containing precursor and at least one first nitrogen-containing precursor, and maintaining the reaction mixture at a temperature to seed nanoparticle growth. It further comprises a second stage of adding at least one second nitrogen-containing precursor to the reaction mixture thereby to promote nanoparticle growth.

Abstract: A multifunctional tool which enables a single robot or other manipulator to perform each of the operations to depalletize a palletized load is disclosed. The depalletization can proceed without the need to move the palletized load from one station to another. The multifunctional tool includes a strap cutting mechanism, extendable vacuum arms, and a fork lift mechanism.

Abstract: The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art. The composition of the new Zn-(II)-III-N compound semiconductor material can be controlled in order to tailor its band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.

Abstract: The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles.

Abstract: A method of compacting material such as but not limited to cathode material for electrochemical cells. A mixture is inserted into a die cavity and the mixture is compacted into a disk shape by the action of a first plunger pressing down on the material and a second plunger pressing upwardly on the material. Flashing of material during ejection of the disk from the die is prevented by fitting a polymeric sleeve around the outer surface of the first plunger. The sleeve flexes to bulge outwardly and does not enter the die cavity during compaction of material and returns to its original position during ejection of the compacted disk from the die. Contact between the disk and sleeve prevents flashing during ejection. Alternatively, a polymeric seal ring is placed around the outer surface of the first plunger. The disk presses against the seal ring preventing flashing of material during ejection.

Abstract: A method of compacting material such as but not limited to cathode material for electrochemical cells. A mixture is inserted into a die cavity and the mixture is compacted into a disk shape by the action of a first plunger pressing down on the material and a second plunger pressing upwardly on the material. Flashing of material during ejection of the disk from the die is prevented by fitting a polymeric sleeve around the outer surface of the first plunger. The sleeve flexes to bulge outwardly and does not enter the die cavity during compaction of material and returns to its original position during ejection of the compacted disk from the die. Contact between the disk and sleeve prevents flashing during ejection. Alternatively, a polymeric seal ring is placed around the outer surface of the first plunger. The disk presses against the seal ring preventing flashing of material during ejection.

Abstract: A method of compacting material such as but not limited to cathode material for electrochemical cells. A mixture is inserted into a die cavity and the mixture is compacted into a disk shape by the action of a first plunger pressing down on the material and a second plunger pressing upwardly on the material. Flashing of material during ejection of the disk from the die is prevented by fitting a polymeric sleeve around the outer surface of the first plunger. The sleeve flexes to bulge outwardly and does not enter the die cavity during compaction of material and returns to its original position during ejection of the compacted disk from the die. Contact between the disk and sleeve prevents flashing during ejection. Alternatively, a polymeric seal ring is placed around the outer surface of the first plunger. The disk presses against the seal ring preventing flashing of material during ejection.