Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, branch transmission lines, common transmission lines and vias. The heating plate is capable of being driven by AC current or direct current phase alternating power, which has an advantage of minimizing DC magnetic field effects above the substrate support assembly and reduce plasma non-uniformity caused by DC magnetic fields.

Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, branch transmission lines, common transmission lines and vias. The heating plate is capable of being driven by AC current or direct current phase alternating power, which has an advantage of minimizing DC magnetic field effects above the substrate support assembly and reduce plasma non-uniformity caused by DC magnetic fields.