Patents by Inventor Nelly PLASSAT

Nelly PLASSAT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace
    Patent number: 10125430
    Abstract: A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.
    Type: Grant
    Filed: May 26, 2014
    Date of Patent: November 13, 2018
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Etienne Pihan, Vanessa Amaral De Oliveira, Denis Camel, Denis Chavrier, Gautier Fortin, Anis Jouini, Benoit Marie, Nelly Plassat
  • METHOD FOR MANUFACTURING A SILICON CYLINDER BY GROWTH ON SEEDS IN A DIRECTED SOLIDIFICATION FURNACE
    Publication number: 20160108548
    Abstract: A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterised in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.
    Type: Application
    Filed: May 26, 2014
    Publication date: April 21, 2016
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Etienne PIHAN, Vanessa AMARAL DE OLIVEIRA, Denis CAMEL, Denis CHAVRIER, Gautier FORTIN, Anis JOUINI, Benoit MARIE, Nelly PLASSAT