Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

Abstract: Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-? oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Abstract: Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-? oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Abstract: Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-? oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Abstract: Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-? oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Abstract: Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-? oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Abstract: Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-? oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.