Patents by Inventor Neophythos Lophitis

Neophythos Lophitis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reverse conducting power semiconductor device
    Patent number: 9543305
    Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w?), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w?) of each one of the two outer cathode layer regions next to a diode cell neighboring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: January 10, 2017
    Assignee: ABB SCHWEIZ AG
    Inventors: Neophythos Lophitis, Florin Udrea, Umamaheswara Vemulapati, Lulian Nistor, Martin Arnold, Jan Vobecky, Munaf Rahimo
  • REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE
    Publication number: 20160284708
    Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w?), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w?) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.
    Type: Application
    Filed: March 23, 2016
    Publication date: September 29, 2016
    Inventors: Neophythos Lophitis, Florin Udrea, Umamaheswara Vemulapati, lulian Nistor, Martin Arnold, Jan Vobecky, Munaf Rahimo