Abstract: Provided is an apparatus and method for cleaning and drying a semiconductor wafer. Isopropyl alcohol and deionized water are premixed in a desired ratio before a cleaning solution containing isopropyl alcohol and deionized water is supplied into a treating bath. Accordingly, a chemical compound remaining due to deionized water can be effectively removed and the creation of water marks due to isopropyl alcohol can be effectively prevented. As a result, cleaning and drying effects can be increased and a cleaning solution can be reused.

Abstract: A semiconductor cleaning apparatus and a method of cleaning a wafer surface using the semiconductor cleaning apparatus are provided. In the semiconductor cleaning apparatus, wastewater is easily treated, the consumption of chemical usage is considerably reduced, and a contaminant removal efficiency on the wafer surface is maximized even at a room temperature or a low temperature by using a mixed chemical solution composed of an aqueous ammonium hydroxide and ozone as a cleaning solution in cleaning the wafer surface. In the method of cleaning the wafer surface, a cleaning solution is formed in a mixing tank by adding ozone to aqueous ammonium hydroxide. The cleaning solution is supplied into a cleaning bath through a filter for removing ozone bubble. Megasonic power is applied to the cleaning solution in the cleaning bath using a megasonic transducer. A wafer dipped in the cleaning solution which is at a room temperature to remove the contaminants on wafer surface.

Abstract: An atomic layer deposition (ALD) apparatus capable of depositing a thin film on a plurality of substrates. The atomic layer deposition apparatus includes: a vacuum chamber, a reactor installed in the vacuum chamber, having a plurality of modules which can be assembled and disassembled as desired, a plurality of stages as spaces partitioned by assembling the plurality of modules, and openings which allow each stage to receive one substrate; a gas supply portion installed in the reactor, for supplying reaction gases and a purging gas to the reactor; and a plurality of gas supply lines installed in the modules, for injecting the gases from the gas supply portion into the stages.