Abstract: The present disclosure relates to beam writing technologies. In detail, a technique for compensating process artifacts of a mask layout transfer process is described. A method implementation of that technique comprises modeling, for a target mask layout, an intensity profile resulting from exposing a resist on a masking layer by beam writing. Further, a contour and a profile of the exposed resist after development are modeled from the intensity profile. Then, a geometry of the masking layer after etching is modeled from the resist contour and the resist profile. For any deviation of the modeled geometry from the target mask layout, an adjustment compensating the deviation can thus be determined.

Abstract: A technique and method for determining a process dose for a beam lithography process includes accessing a data set that enables associating (i) a plurality of measured dimensions of features exposed by beam lithography with (ii) a plurality of different exposure doses, wherein the features were exposed with the different exposure doses, and with (iii) at least one of a plurality of different densities of the exposed features and a plurality of different nominal dimensions of the exposed features. The method also includes providing a model that is parameterized in at least the following parameters (i) measured feature dimension; (ii) exposure dose; (iii) at least one of feature density and nominal feature dimension; (iv) process dose; and (v) at least one process bias. In a further step, the method includes fitting the model with the data set to determine the process dose and the process bias.

Abstract: A technique and method for determining a process dose for a beam lithography process includes accessing a data set that enables associating (i) a plurality of measured dimensions of features exposed by beam lithography with (ii) a plurality of different exposure doses, wherein the features were exposed with the different exposure doses, and with (iii) at least one of a plurality of different densities of the exposed features and a plurality of different nominal dimensions of the exposed features. The method also includes providing a model that is parameterized in at least the following parameters (i) measured feature dimension; (ii) exposure dose; (iii) at least one of feature density and nominal feature dimension; (iv) process dose; and (v) at least one process bias. In a further step, the method includes fitting the model with the data set to determine the process dose and the process bias.

Abstract: The present disclosure relates to beam writing technologies. In detail, a technique for compensating process artifacts of a mask layout transfer process is described. A method implementation of that technique comprises modeling, for a target mask layout, an intensity profile resulting from exposing a resist on a masking layer by beam writing. Further, a contour and a profile of the exposed resist after development are modeled from the intensity profile. Then, a geometry of the masking layer after etching is modeled from the resist contour and the resist profile. For any deviation of the modeled geometry from the target mask layout, an adjustment compensating the deviation can thus be determined.

Abstract: The comprises at least one sample receiving chamber for a sample liquid, and a distributor channel for sample liquid connected to said at least one sample receiving chamber, with at least one such distributor channel extending from each sample receiving chamber. The sample support further comprises at least one reaction chamber entered by an inflow channel branched off said at least one distributor channel, and a venting opening for each reaction chamber. Each distributor channel and each inflow channel are dimensioned to have the liquid transport through the distributor and inflow channels effected by capillary forces. In each reaction chamber, the entrance region of the inflow channel is provided with a means for generating a capillary force causing the sample liquid to flow from the inflow channel into the reaction chamber.