Patents by Inventor Ngwe K. Cheong

Ngwe K. Cheong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transferred flexible integrated circuit
    Patent number: 6027958
    Abstract: Integrated circuits for use in electronic devices requiring high density packaging are fabricated to provide highly flexible and ultra-thin devices having a variety of applications. The flexible circuits have dimensions up to several centimeters in surface area and thicknesses of a few microns. These circuits are fabricated using transfer techniques which include the removal of VLSI circuits from silicon wafers and mounting of the circuits on application specific substrates.
    Type: Grant
    Filed: July 11, 1996
    Date of Patent: February 22, 2000
    Assignee: Kopin Corporation
    Inventors: Duy-Phach Vu, Brenda Dingle, Ngwe K. Cheong
  • Reduction of parasitic effects in floating body mosfets
    Patent number: 5578865
    Abstract: A semiconductor fabrication method improves the voltage characteristic of floating-body MOSFETs by creating recombination centers near the source-body junction of the device. A MOSFET is fabricated through the passivation oxidation stage, and a photolithography step is used to expose the source region. Implantation is then performed using one of two types of material. A first type creates electron traps of predetermined energy in the vicinity of the source-body junction. A second type creates defects in the crystalline structure of the semiconductor material. Both implantation types create recombination centers in the material. This allows the discharge through the source-body junction of charges built up in the body region.
    Type: Grant
    Filed: April 24, 1995
    Date of Patent: November 26, 1996
    Assignee: Kopin Corporation
    Inventors: Duy-Phach Vu, Ngwe K. Cheong
  • Zone-melting recrystallization process
    Patent number: 5453153
    Abstract: An improved method of zone-melting recrystallizing of a silicon film on an insulator in which the film is implanted and annealed to achieve a reduction of the density of defects within the film.
    Type: Grant
    Filed: March 5, 1992
    Date of Patent: September 26, 1995
    Assignee: Kopin Corporation
    Inventors: John C. C. Fan, Paul M. Zavracky, Jagdish Narayan, Lisa P. Allen, Duy-Phach Vu, Ngwe K. Cheong
  • Reduction of parasitic effects in floating body MOSFETs
    Patent number: 5420055
    Abstract: A semiconductor fabrication method improves the voltage characteristic of floating-body MOSFETs by creating recombination centers near the source-body junction of the device. A MOSFET is fabricated through the passivation oxidation stage, and a photolithography step is used to expose the source region. Implantation is then performed using one of two types of material. A first type creates electron traps of predetermined energy in the vicinity of the source-body junction. A second type creates defects in the crystalline structure of the semiconductor material. Both implantation types create recombination centers in the material. This allows the discharge through the source-body junction of charges built up in the body region.
    Type: Grant
    Filed: November 16, 1993
    Date of Patent: May 30, 1995
    Assignee: Kopin Corporation
    Inventors: Duy-Phach Vu, Ngwe K. Cheong