Abstract: A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: A low-voltage lithium battery circuitry includes a busbar, a battery signal transmitter unit, a battery management system, and a lithium battery module connected to the battery management system through the busbar and the battery signal transmitter unit. The lithium battery module is configured to provide energy for an external load and supply power to the battery management system. The battery management system is configured to monitor electrical parameters acquired in the lithium battery module and, when any one of the electrical parameters exceeds a protection threshold range corresponding thereto, perform a protection operation.

Abstract: A method of manufacturing an image sensor structure includes forming an isolation structure in a substrate to divide the substrate into a first region and a second region, forming a first light sensing region in the first region and a second light sensing region in the second region, forming a first gate structure over the first light sensing region and a second gate structure over the second light sensing region, forming gate spacers on sidewalls of the first and second gate structures, and depositing a blocking layer on sidewalls of the gate spacers. The blocking layer has an opening positioned between the first and second gate structures. A source/drain structure is formed directly under the opening in the blocking layer. The method also includes forming an interlayer dielectric layer over the first and second gate structures and the blocking layer.

Abstract: Methods for forming via last through-vias. A method includes providing an active device wafer having a front side including conductive interconnect material disposed in dielectric layers and having an opposing back side; providing a carrier wafer having through vias filled with an oxide extending from a first surface of the carrier wafer to a second surface of the carrier wafer; bonding the front side of the active device wafer to the second surface of the carrier wafer; etching the oxide in the through vias in the carrier wafer to form through oxide vias; and depositing conductor material into the through oxide vias to form conductors that extend to the active carrier wafer and make electrical contact to the conductive interconnect material. An apparatus includes a carrier wafer with through oxide vias extending through the carrier wafer to an active device wafer bonded to the carrier wafer.

Abstract: A registration system for robot-oriented augmented reality teaching system, comprising: a physical robot unit, a registration unit, a virtual robot generation unit and a computer; the physical robot unit comprising a physical robot, a physical robot controller and a robot point-to-point intermittent movement control program; the physical robot provided thereon with a physical robot base coordinate system; the physical robot controller connected with the physical robot and the computer respectively; the robot point-to-point intermittent movement control program installed in the computer; the registration unit comprising a registration marker, a camera and a conversion calculation unit; the registration marker arranged on the physical robot body; the camera fixed in a physical environment except the physical robot; the camera connected with the computer, and the conversion calculation unit arranged in the computer; the virtual robot generation unit arranged in the computer and used for generating a virtual robo

Abstract: A surface electromyography signal-torque matching method based on multi-segmentation parallel CNN model (MSP-CNN model), step 1: collecting torque signals and surface electromyography (sEMG) signals when tightening a bolt; step 2: dividing a range of a transducer by at least two granularities, generating a plurality of torque sub-ranges corresponding to the at least two granularities and labeling the plurality of torque sub-ranges with torque labels; step 3: generating sEMG graphs of the sEMG signals in each time window; step 4: determining the torque labels of each time window under each of the at least two granularities according to the torque sub-ranges that average values of torques fall in; step 5: establishing a sample set; step 6: building a MSP-CNN model, and training parallel independent CNN models with sample datasets; and step 7: inputting the sEMG signals of the operator during assembly into trained MSP-CNN model and identifying assembly torques.

Abstract: Disclosed are a polyethylene glycol conjugate drug, and a preparation method therefor and the use thereof. Specifically, the present invention relates to a polyethylene glycol conjugate drug represented by formula A or a pharmaceutically acceptable salt thereof, a method for preparing the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof, an intermediate for preparing the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof, a pharmaceutical composition comprising the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof, and the use of the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof in the preparation of a drug.

Abstract: A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.

Abstract: The present invention relates to a negative electrode material comprising a hydrogen storage alloy and a coating layer on a surface of the hydrogen storage alloy. Based on the mass of the negative electrode active material, a content of the coating layer is no less than 2 wt %. The coating layer comprises a component shown by a general formula LnFx, wherein Ln is one element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. The present invention also relates to a preparation method for the above-described negative electrode material. The present invention also relates to a nickel-metal hydride secondary battery using this negative electrode material.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes, from an object side to an image side along an optical axis, a first lens with a positive refractive power, a second lens, a third lens with a positive refractive power, a fourth lens, a fifth lens with a positive refractive power and a sixth lens with a negative refractive power, wherein a total effective focal length f of the optical imaging lens assembly and an entrance pupil diameter (EPD) of the optical imaging lens assembly meet f/EPD<1.35; and an effective focal length f3 of the third lens, an effective focal length f5 of the fifth lens and an effective focal length f1 of the first lens meet 0.9<(f3+f5)/f1<1.7.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes placing a package substrate on a carrier substrate, forming a frame on the package substrate, and affixing an active side of a semiconductor die on the package substrate. The semiconductor die together with the frame and the package substrate form a cavity between the semiconductor die and the package substrate. At least a portion of the semiconductor die and the package substrate are encapsulated with an encapsulant. The frame is configured to prevent the encapsulant from entering the cavity.

Abstract: The present disclosure relates to compounds that are capable of modulating calcium ion homeostasis and treating disorders related thereto. The disclosure further relates to methods of making the aforementioned compounds.

Abstract: The present disclosure discloses an optical imaging lens assembly including, sequentially from an object side to an image side along an optical axis, a first lens having refractive power; a second lens having refractive power; a third lens having negative refractive power; a fourth lens having refractive power and a convex object-side surface; a fifth lens having refractive power and a concave object-side surface; a sixth lens having refractive power; a seventh lens having refractive power; and an eighth lens having refractive power. A total effective focal length f of the optical imaging lens assembly and half of a maximal field-of-view Semi-FOV of the optical imaging lens assembly satisfy: f*tan(Semi-FOV)>5.5 mm. A total effective focal length f of the optical imaging lens assembly and an effective focal length f1 of the first lens satisfy: 0.5<f/f1<1.5.

Abstract: The present disclosure discloses an optical imaging lens assembly, which includes: a first lens having positive refractive power and a convex object-side surface; a second lens having refractive power, and a concave image-side surface; a third lens having refractive power; a fourth lens having refractive power; and a fifth lens having negative refractive power, a concave object-side surface, and a concave image-side surface. The optical imaging lens assembly satisfies TL/ImgH<1.35; 0.6<R9/f5<1.2 and 0.5<ET5/ET4<1, where TTL is a total length of the optical imaging lens assembly, ImgH is a half diagonal length of an effective pixel area on an imaging plane, f5 is an effective focal length of the fifth lens, R9 is a radius of curvature of the object-side surface of the fifth lens, ET4 and ET5 are edge thicknesses of the fourth and the fifth lenses, respectively.

Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes from an object side to an image side along an optical axis: a variable diaphragm; a first lens; a second lens; a third lens; a fourth lens; a fifth lens, an object-side surface thereof is a convex surface; a sixth lens; and a seventh lens. a center thickness CT1 of the first lens on the optical axis and an air space T67 between the sixth lens and the seventh lens on the optical axis satisfy CT1/T67<1.0.

Abstract: An action evaluation model building apparatus and an action evaluation model building method thereof are provided. The action evaluation model building apparatus stores a plurality of raw data sets and a plurality of standard action labels corresponding thereto. Based on machine learning algorithms, the action evaluation model building apparatus computes the raw data sets and performs a supervised learning to build a feature vector creation model and a classifier model. The action evaluation model building apparatus determines a representation action feature vector of each standard action label by randomly generating a plurality of action feature vectors and inputting them into the classifier model. The action evaluation model building apparatus builds an action evaluation model based on the feature vector creation model, the classifier model and the representation action feature vectors.

Abstract: A display device is provided. The display device includes: a frame, a panel, and a conductive adhesive. The panel is bonded to the frame via the conductive adhesive. The panel further includes a back plate and a conductive component, wherein the conductive adhesive is electrically connected to the back plate via the conductive component.