Patents by Inventor Nian-Fuh Cheng
Nian-Fuh Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10324369Abstract: Embodiments of the present disclosure provide a method of generating mandrel patterns. A mandrel pattern is generated by constructing a boundary box, initiating a plurality of lead mandrels, and extending the lead mandrels across the boundary box. When a pattern region includes holes, portions of mandrels are removed from the holes after extension of the leading mandrels.Type: GrantFiled: August 25, 2017Date of Patent: June 18, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Yu Wang, Nian-Fuh Cheng, Chia-Ping Chiang, Ming-Hui Chih, Wen-Chun Huang, Tsai-Sheng Gau
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Publication number: 20190064652Abstract: Embodiments of the present disclosure provide a method of generating mandrel patterns. A mandrel pattern is generated by constructing a boundary box, initiating a plurality of lead mandrels, and extending the lead mandrels across the boundary box. When a pattern region includes holes, portions of mandrels are removed from the holes after extension of the leading mandrels.Type: ApplicationFiled: August 25, 2017Publication date: February 28, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Yu Wang, Nian-Fuh Cheng, Chia-Ping Chiang, Ming-Hui Chih, Wen-Chun Huang, Tsai-Sheng Gau
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Patent number: 9911606Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a design layout of the IC, wherein the design layout includes two abutting blocks, the two blocks include target patterns, and the target patterns have different pitches in the two blocks. The method further includes generating mandrel pattern candidates in spaces between adjacent target patterns, and assigning first and second colors to the mandrel pattern candidates according to their priorities. The method further includes removing the mandrel pattern candidates assigned with the second color, and outputting a mandrel pattern in computer-readable format for mask fabrication. The mandrel pattern includes the mandrel pattern candidates that are colored with the first color.Type: GrantFiled: September 16, 2016Date of Patent: March 6, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ping Chiang, Ya-Ting Chang, Wen-Li Cheng, Nian-Fuh Cheng, Ming-Hui Chih, Wen-Chun Huang, Ru-Gun Liu, Tsai-Sheng Gau
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Patent number: 9880460Abstract: The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.Type: GrantFiled: July 15, 2016Date of Patent: January 30, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Ching-Hsu Chang, Nian-Fuh Cheng, Chih-Shiang Chou, Wen-Chun Huang, Ru-Gun Liu
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Publication number: 20170316938Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a design layout of the IC, wherein the design layout includes two abutting blocks, the two blocks include target patterns, and the target patterns have different pitches in the two blocks. The method further includes generating mandrel pattern candidates in spaces between adjacent target patterns, and assigning first and second colors to the mandrel pattern candidates according to their priorities. The method further includes removing the mandrel pattern candidates assigned with the second color, and outputting a mandrel pattern in computer-readable format for mask fabrication. The mandrel pattern includes the mandrel pattern candidates that are colored with the first color.Type: ApplicationFiled: September 16, 2016Publication date: November 2, 2017Inventors: Chia-Ping Chiang, Ya-Ting Chang, Wen-Li Cheng, Nian-Fuh Cheng, Ming-Hui Chih, Wen-Chun Huang, Ru-Gun Liu, Tsai-Sheng Gau
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Patent number: 9627262Abstract: A method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.Type: GrantFiled: April 28, 2015Date of Patent: April 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chao Chiu, Chen-Yu Chen, Chih-Ming Lai, Ming-Feng Shieh, Nian-Fuh Cheng, Ru-Gun Liu, Wen-Chun Huang
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Publication number: 20160327854Abstract: The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.Type: ApplicationFiled: July 15, 2016Publication date: November 10, 2016Inventors: Ching-Hsu Chang, Nian-Fuh Cheng, Chih-Shiang Chou, Wen-Chun Huang, Ru-Gun Liu
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Patent number: 9395618Abstract: The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.Type: GrantFiled: July 24, 2015Date of Patent: July 19, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hsu Chang, Nian-Fuh Cheng, Chih-Shiang Chou, Wen-Chun Huang, Ru-Gun Liu
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Publication number: 20150331333Abstract: The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.Type: ApplicationFiled: July 24, 2015Publication date: November 19, 2015Inventors: Ching-Hsu Chang, Nian-Fuh Cheng, Chih-Shiang Chou, Wen-Chun Huang, Ru-Gun Liu
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Publication number: 20150228542Abstract: A method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.Type: ApplicationFiled: April 28, 2015Publication date: August 13, 2015Inventors: Wei-Chao Chiu, Chen-Yu Chen, Chih-Ming Lai, Ming-Feng Shieh, Nian-Fuh Cheng, Ru-Gun Liu, Wen-Chun Huang
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Patent number: 9091930Abstract: The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.Type: GrantFiled: April 2, 2012Date of Patent: July 28, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hsu Chang, Nian-Fuh Cheng, Chih-Shiang Chou, Wen-Chun Huang, Ru-Gun Liu
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Patent number: 9023695Abstract: The present disclosure provides a method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.Type: GrantFiled: March 14, 2013Date of Patent: May 5, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chao Chiu, Nian-Fuh Cheng, Chen-Yu Chen, Ming-Feng Shieh, Chih-Ming Lai, Wen-Chun Huang, Ru-Gun Lin
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Patent number: 8945803Abstract: The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.Type: GrantFiled: December 16, 2013Date of Patent: February 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Shiang Chen, Hung-Chun Wang, Jeng-Horng Chen, Cheng-Hung Chen, Shih-Chi Wang, Nian-Fuh Cheng, Chia-Chi Lin
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Patent number: 8745550Abstract: The present disclosure describes an OPC method of preparing data for forming a mask. The method includes setting a plurality of dissection points at the main feature and further includes setting a target point at the main feature. The method includes arranging the two dissection points crossing the main feature symmetrically each other. The method includes separating two adjacent dissection points at one side of the main feature by a maximum resolution of the mask writer. The method includes dividing the main feature into a plurality of segments using the dissection points. The method includes performing an OPC convergence simulation to a target point. The method includes correcting the segments belonging to an ambit of the target point and further includes correcting the segment shared by two ambits.Type: GrantFiled: July 9, 2012Date of Patent: June 3, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Nian-Fuh Cheng, Yu-Po Tang, Chien-Fu Lee, Sheng-Wen Lin, Yong-Cheng Lin, Wen-Chun Huang, Ru-Gun Liu
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Publication number: 20140099582Abstract: The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.Type: ApplicationFiled: December 16, 2013Publication date: April 10, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Shiang Chen, Hung-Chun Wang, Jeng-Horng Chen, Cheng-Hung Chen, Shih-Chi Wang, Nian-Fuh Cheng, Chia-Chi Lin
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Publication number: 20140013287Abstract: The present disclosure describes an OPC method of preparing data for forming a mask. The method includes setting a plurality of dissection points at the main feature and further includes setting a target point at the main feature. The method includes arranging the two dissection points crossing the main feature symmetrically each other. The method includes separating two adjacent dissection points at one side of the main feature by a maximum resolution of the mask writer. The method includes dividing the main feature into a plurality of segments using the dissection points. The method includes performing an OPC convergence simulation to a target point. The method includes correcting the segments belonging to an ambit of the target point and further includes correcting the segment shared by two ambits.Type: ApplicationFiled: July 9, 2012Publication date: January 9, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Nian-Fuh Cheng, Yu-Po Tang, Chien-Fu Lee, Sheng-Wen Lin, Yong-Cheng Lin, Wen-Chun Huang, Ru-Gun Liu
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Patent number: 8609308Abstract: The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.Type: GrantFiled: May 31, 2012Date of Patent: December 17, 2013Assignee: Taiwan Semicondcutor Manufacturing Company, Ltd.Inventors: Pei-Shiang Chen, Hung-Chun Wang, Jeng-Horng Chen, Cheng-Hung Chen, Shih-Chi Wang, Nian-Fuh Cheng, Chia-Chi Lin
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Publication number: 20130323648Abstract: The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.Type: ApplicationFiled: May 31, 2012Publication date: December 5, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Pei-Shiang Chen, Hung-Chun Wang, Jeng-Horng Chen, Cheng-Hung Chen, Shih-Chi Wang, Nian-Fuh Cheng, Chia-Chi Lin
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Patent number: 8601407Abstract: Provided is a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.Type: GrantFiled: August 25, 2011Date of Patent: December 3, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Chun Wang, Pei-Shiang Chen, Tzu-Chin Lin, Cheng-Hung Chen, Shih-Chi Wang, Nian-Fuh Cheng, Jeng-Horng Chen, Wen-Chun Huang, Ru-Gun Liu
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Publication number: 20130258304Abstract: The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.Type: ApplicationFiled: April 2, 2012Publication date: October 3, 2013Applicant: Taiwan Semiconductor Manufacturing CompanyInventors: Ching-Hsu Chang, Nian-Fuh Cheng, Chih-Shiang Chou, Wen-Chun Huang, Ru-Gun Liu