Abstract: A substrate processing chamber component comprising a chamber component structure having an yttrium-aluminum coating. The yttrium-aluminum coating comprises a compositional gradient through a thickness of the coating.

Abstract: Methods of fabricating a chamber component capable of being exposed to a plasma in a process chamber includes: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species; forming a cathode by connecting the component structure to a negative terminal of a voltage source; immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and electroplating a layer having a concentration gradient of the first metal, second metal, or both.

Abstract: A substrate processing chamber component comprising a chamber component structure having an yttrium-aluminum coating. The yttrium-aluminum coating comprises a compositional gradient through a thickness of the coating.

Abstract: A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating can include zirconium oxide, or can have an oxide layer thereon. In another embodiment the electroplated coating comprises a first species and is coated with a second electroplated coating comprising a second species that is different from the first species. The electroplated coating is resistant to corrosion in the plasma. In another embodiment, the electroplated coating has an interface having a thickness with a first concentration gradient of an yttrium-containing species and a second concentration gradient of a second species. An electroplated coating having a layer comprising first and second concentration gradients of first and second metals can be formed by varying the concentration of the first and second metal electrolyte species in the electroplating bath to electroplate the coating.

Abstract: A method of manufacturing a substrate processing chamber component comprises forming a chamber component comprising a metal alloy comprising yttrium and aluminum, and anodizing an exposed surface of the metal alloy.

Abstract: A method of forming a component capable of being exposed to a plasma in a process chamber comprises forming a structure comprising a surface and electroplating yttrium, and optionally aluminum or zirconium, onto the surface. Thereafter, the electroplated layer can be annealed to oxide the yttrium and other electroplated species.

Abstract: A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating can include zirconium oxide, or can have an oxide layer thereon. In another embodiment the electroplated coating comprises a first species and is coated with a second electroplated coating comprising a second species that is different from the first species. The electroplated coating is resistant to corrosion in the plasma. In another embodiment, the electroplated coating has an interface having a thickness with a first concentration gradient of an yttrium-containing species and a second concentration gradient of a second species. An electroplated coating having a layer comprising first and second concentration gradients of first and second metals can be formed by varying the concentration of the first and second metal electrolyte species in the electroplating bath to electroplate the coating.

Abstract: A method of manufacturing a substrate processing chamber component comprises forming a chamber component comprising a metal alloy comprising yttrium and aluminum, and anodizing an exposed surface of the metal alloy.

Abstract: A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating is resistant to corrosion in the plasma, and can have a compositional gradient of yttrium-containing species through a thickness of the coating. In one embodiment, the coating is formed by electroplating a layer comprising yttrium onto the surface, and then electroplating a second layer onto the first layer, and annealing the first and second layers. The second layer can comprise aluminum or zirconium. In another embodiment, the coating is formed by electroplating a layer comprising a mixture of aluminum and yttrium onto the surface and annealing the layer.

Abstract: A method of forming a component capable of being exposed to a plasma in a process chamber comprises forming a structure comprising a surface and electroplating yttrium, and optionally aluminum or zirconium, onto the surface. Thereafter, the electroplated layer can be annealed to oxide the yttrium and other electroplated species.

Abstract: A bonded multi-layer RF window may include an external layer of dielectric material having desired thermal properties, an internal layer of dielectric material exposed to plasma inside a reaction chamber, and an intermediate layer of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF window may include cooling conduits for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits and gas injection apertures may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.

Abstract: A substrate processing chamber component is a structure having an integral surface coating comprising an yttrium-aluminum compound. The component may be fabricated by forming a metal alloy comprising yttrium and aluminum into the component shape and anodizing its surface to form an integral anodized surface coating. The chamber component may be also formed by ion implanting material in a preformed metal shape. The component may be one or more of a chamber wall, substrate support, substrate transport, gas supply, gas energizer and gas exhaust.

Abstract: A method of depositing boron carbide on an aluminum substrate, particularly useful for a plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B4C. Although in this application, the boron carbide may be a bulk sintered body, in the method of the invention it may be a layer of boron carbide coated on an aluminum chamber part. The boron carbide coating may be applied by thermal spraying, such as plasma spraying, by chemical vapor deposition, or by other layer forming technique such as a surface converting reaction. The boron carbide is highly resistant to high-density plasma etchants such as BCl3. The plasma sprayed coating is advantageously applied to only a portion of an anodized aluminum wall. The boron carbide may be sprayed over the exposed portion of an aluminum substrate over which the anodization has been removed.

Abstract: A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating is resistant to corrosion in the plasma, and can have a compositional gradient of yttrium-containing species through a thickness of the coating. In one embodiment, the coating is formed by electroplating a layer comprising yttrium onto the surface, and then electroplating a second layer onto the first layer, and annealing the first and second layers. The second layer can comprise aluminum or zirconium. In another embodiment, the coating is formed by electroplating a layer comprising a mixture of aluminum and yttrium onto the surface and annealing the layer.

Abstract: An erosion resistant member that may be used in the processing of a substrate in a plasma of a processing gas, comprises at least a portion that may be exposed to the plasma of the processing gas and that contains more than about 3% by weight of an oxide of a Group IIIB metal. The portion may also further contain a ceramic compound selected from silicon carbide, silicon nitride, boron carbide, boron nitride, aluminum nitride, aluminum oxide, and mixtures thereof.

Abstract: Method and apparatus for cleaning ceramic surfaces of parts used, for example, and without limitation, in semiconductor processing equipment. In particular, one embodiment of the present invention is a method for cleaning a ceramic part that includes steps of: (a) treating the surface using one or more first mechanical processes; (b) treating the surface using one or more chemical processes; (c) plasma conditioning the surface; and (d) treating the surface using one or more second mechanical processes.

Abstract: A ceramic dome for in a plasma processing chamber having an RF coil disposed outside of said dome. The interior of the dome is formed with macroscopic grooves, and the grooves are roughened into a microscopic structure. The roughening provides increased adhesion to a residue film deposited on the dome during plasma processing. The macroscopic grooves increase the effective area of the dome and thus decreases the thickness of deposited film. The grooves may be formed by machining a green form of the ceramic material cast prior to sintering. The roughening may be formed by bead blasting the machined green form. Thereafter, the green form is fired to form a sintered ceramic dome.

Abstract: A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.

Abstract: A substrate processing chamber component is a structure having an integral surface coating comprising an yttrium-aluminum compound. The component may be fabricated by forming a metal alloy comprising yttrium and aluminum into the component shape and anodizing its surface to form an integral anodized surface coating. The chamber component may be also formed by ion implanting material in a preformed metal shape. The component may be one or more of a chamber wall, substrate support, substrate transport, gas supply, gas energizer and gas exhaust.

Abstract: A diamond coating formed on a bulk member used in a plasma processing chamber for processing a substrate such as a semiconductor wafer. The coating is particularly useful in a plasma etching chamber using a chlorine-based chemistry to etch metal. One class of such parts includes a dielectric chamber wall, in particular, a chamber wall through which RF or microwave energy is coupled into the chamber to support the plasma. For example, an RF inductive coil is positioned outside the chamber wall and inductively couples energy into the chamber. Exemplary substrates for the diamond coating include alumina, silicon nitride, silicon carbide, polysilicon, and a SiC/Si composite. Amorphous carbon may be substituted for diamond.