Abstract: An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor.

Abstract: An electronic device including first, second and third conductor layers respectively arranged as the source, drain and gate electrodes of a field effect transistor, the third conductor layer being capacitively coupled with both the first and second conductor layers but with the second conductor layer to a greater degree than with the first conductor layer, wherein the electronic device is operable as a non-linear capacitor by applying an alternating voltage across the third conductor layer and the first conductor layer whilst leaving the second conductor layer at a floating potential.

Abstract: An electronic device including first, second and third conductor layers respectively arranged as the source, drain and gate electrodes of a field effect transistor, the third conductor layer being capacitively coupled with both the first and second conductor layers but with the second conductor layer to a greater degree than with the first conductor layer, wherein the electronic device is operable as a non-linear capacitor by applying an alternating voltage across the third conductor layer and the first conductor layer whilst leaving the second conductor layer at a floating potential.

Abstract: Production of an electronic device by solution processing by depositing fluid including a device material or a precursor thereto onto a zone of a substrate surface between at least two opposed barriers for together controlling the spread of said fluid on the substrate surface, wherein at least one of the two opposed barriers is structured so as to facilitate controlled spillage of excess fluid out of the zone to one or more selected locations. Also, production of an electronic device by solution processing by longitudinally depositing fluid containing a device material or a precursor thereto on a patterned substrate to form a plurality of spaced longitudinal channels of said device material of controlled lateral width, wherein the substrate is patterned such that at least one lateral connection between at least one pair of adjacent channels is formed at at least one selected location without the need to carry out any lateral deposition of said fluid.