Abstract: An assembly (100) is provided comprising a first chip (20) and a second chip (30) which are interconnected through solder connections. These comprise, at the first chip, an underbump metallisation and a solder bump, and, at the second chip, a metallisation. In this case the solder bump is provided as a fluid layer with a contact angle of less than 90° C., and an intermetallic compound is formed on the basis of the metallisation at the second chip, and at least one element of the composition is applied as the solder bump.

Abstract: The invention relates to a radiation detector and a method for its production, wherein a series of converter plates (110) and interconnect layers (120), which extend into a border volume (BV) lateral of the converter plates (110), are stacked. By filling voids in the border volume (BV) with an underfill material and cutting through the border volume, a contact surface (CS) is generated in which electrical leads (123) of the interconnect layers (120) lie free. To allow a good contacting, said leads (123) are preferably provided with enlargements in the contact surface, for example by bonding wires (132) to them.

Abstract: A radiation-sensitive detector includes a first substrate 202 with first and second opposing sides. The first side detects incident radiation, and the first substrate 202 produces a signal indicative of the detected radiation. At least one electrical contact 204 is located on the first substrate 202. An electrically conductive material 214 is coupled to the at least one electrical contact 204. The electrically conductive material 214 has a melting point in a range of about seventy-two (72) degrees Celsius to about ninety-five (95) degrees Celsius.

Abstract: An electrical contact for a cadmium tellurium component, in particular a cadmium zinc tellurium component comprising a cadmium tellurium component, a first layer (21) formed onto the cadmium tellurium component (10), wherein the first layer (21) comprises indium and a contact agent (30) being bonded directly or indirectly to the first layer (21) to be in electrical contact with the first layer (21). The contact agent may be a stud bump or a conductive adhesive interconnect being bonded indirectly to the first layer via noble metal shielding layer.

Abstract: The assembly (100) comprises a laterally limited semiconductor substrate region (15) in which an electrical element (20) is defined. Thereon, an interconnect structure (21) is present. This is provided, at its first side (101) with contact pads (25,26) for coupling to an electric device (30), and at its second side (102) with connections (20) to the electrical element (11). Terminals (52,53) are present at the second side (102) of the interconnect structure (21), and coupled to the interconnect structure (21) through extensions (22,23) that are laterally displaced and isolated from the semiconductor substrate region (15). An electric device (30) is assembled to the first side (101) of the interconnect structure (21), and an encapsulation (40) extending on the first side (101) of the interconnect structure (21) so as to support it and encapsulating the electric device (30) is present.

Abstract: The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Abstract: The present invention relates to an integrated electronic-micro fluidic device an integrated electronic-micro fluidic device, comprising a semiconductor substrate (106) on a first (122) support, an electronic circuit (102, 104) on a first semiconductor-substrate side of the semiconductor substrate, and a signal interface structure to an external device. The signal interface structure is arranged on the first semiconductor-substrate side and configured to receive electrical signals from the electronic circuit. A micro fluidic structure (126) is formed in the semiconductor substrate, and is configured to confine a fluid and to allow a flow of the fluid to and from the microfluidic structure only on a second semiconductor-substrate side that is opposite to the first semiconductor-substrate side and faces away form the first support. The electronic-micro fluidic device forms a flexible platform for the formation of various System-in-Package applications.

Abstract: For the production of a SLM device, one mounts a spatial light modulator (SLM) (2) on a substrate (3) of the same material as the main material of the SLM (2) to be juxtaposed with the substrate (3). Particularly, silicon based SLMs (2) are mounted on a silicon substrate (3). This leads to arrays of SLMs (2) that maintain a high accuracy with respect to position of the SLMs (2) and planarity. To further improve the planarity, it is preferred to mount the SLMs (2) on the substrate (3) by soldering, using the self-aligning effect of solder connections (20).

Abstract: An assembly of a first chip (100) and a second chip (200), which first chip (100) is flexible and is provided with a first and a second resin layer (12, 52) on opposite sides (1, 2) of the chip (100), which allows to keep the first chip under compressive conditions, on which first and second side (1,2) respectively first side contact pads (33) and second side contact pads (31) are present, which first side contact pads (33) are coupled to corresponding contact pads (211) of the second chip (200), and which second side contact pads (31) are designed for external connection of the assembly.

Abstract: A method of manufacturing a back-side (14) illuminated image sensor (1) is disclosed, comprising the steps of: starting with a wafer (2) having a first (3) and a second surface (4), providing light sensitive pixel regions (5) extending into the wafer (2) from the first surface (3), securing the wafer (2) onto a protective substrate (7) such that the first surface (3) faces the protective substrate, the wafer comprising a substrate of a first material (8) with an optical transparent layer (9) and a layer of semiconductor material (10), wherein the substrate (8) is selectively removed from the layer of semiconductor material by using the optical transparent layer (9) as stopping layer. For back-side illuminated image sensors, light has to transmit through the semiconductor layer and enter into the light sensitive pixel regions (5). In order to reduce absorption losses, it is very advantageous that the semiconductor layer (10) can be made relatively thin with a good uniformity.

Abstract: The flexible package (100) has between a first (1) and a second side (2) a semiconductor device (20) with a thinned back substrate (10) and an interconnect structure. Contact means (31,33) for external contact and a first resin layer (52) are present at the first side (2) of the package (100), which contact means (31,33) are coupled to the interconnect structure. At the second side (2) the semiconductor device (20) is at least substantially covered with a second resin layer (12). The contact means (31,33) are present on the first resin layer (52) and are coupled to the interconnect structure with redistribution tracks (32,34) extending through the first resin layer (52). A passivation layer (55) covers the first resin layer (52) and the redistribution tracks (32,34) at least substantially.

Abstract: The present invention relates to a sensor device for sensing an image of an object, wherein a detection means (14) for detecting radiation received from the object is supported by a light-emitting semiconductor means (12) for emitting radiation towards said object during a predetermined operation period of the detection means (14). The detection means (14) can be operated even at low light intensity conditions and at a low power consumption. The detection means (14) may be a two-side illuminated detection means, wherein one side is supported by the light-emitting semiconductor means (12) and the other side is a back-etched side with increased sensitivity. A cheap and very small multi-purpose camera or sensor module can thereby be provided.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10), whereby an electric element (11) is attached on or above a carrier plate (4) which comprises a first layer (5) of a first material and a second layer (2) of a second material which differs from the first, which is electrically conducting, which has a smaller thickness than the first layer (5), and in which a cavity (6) is formed that extends at least to the first layer (5). The element (11) is electrically connected to parts (2) of the carrier plate (4) at first connection regions (1), and an encapsulation is deposited around the element (11) and in the cavity (6). Then so much of the first layer (5) of the carrier plate (4) is removed that the cavity (6) is reached, whereby second connection conductors (2) are formed from the remaining portion of the carrier plate (4).

Abstract: The invention relates to the manufacture of a semiconductor device (10) which is suitable for surface mounting of a semiconductor body (1) provided with connection regions (2) for, for example, a diode. In a method, a flexible foil (6) comprises a conductor pattern (4) and an insulating layer (3), and is detachably secured, on the side of the conductor pattern (4), to a substrate (7).

Abstract: The invention relates to the manufacture of a semiconductor device (10) which is suitable for surface mounting of a semiconductor body (1) provided with connection regions (2) for, for example, a diode. The body (1) is attached to an electrically insulating medium (3), which is provided, on (at least) one of its sides, with a conductor pattern (4) which is suitable for surface mounting. The body is attached to the other side of the medium (3), and the connection regions (2) of the diode are connected to the conductor pattern (4) through conducting vias (5) in the medium (3).